Pillar confined backside emitting VCSEL
A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.
1. A backside Vertical Cavity Surface Emitting Laser (VCSEL) comprising:
a substrate;
a first mirror device formed on the substrate;
an active layer applied directly on the first mirror device generating light;
a second mirror device directly attached to the active layer and having a thickness of 3-5 um;
a ledge formed only in the second mirror device by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE) forming a pillar having a depth between 50% and 75% of the thickness of the second mirror device, the pillar has a diameter between 5-50 um, wherein the second mirror device is directly attached to the active layer across an entire width of each pillar;
a first metal contact formed over a top section of the pillar;
a second metal contact formed on the substrate; and
an opening formed in the second metal contact and aligned with the pillar.
2. The backside Vertical Cavity Surface Emitting Laser (VCSEL) of claim 1 , comprising a device flip-chip mounted to the backside VCSEL.
3. The backside Vertical Cavity Surface Emitting Laser (VCSEL) of claim 1 , comprising:
a solder formed on the first metal contact;
wherein the solder attaches to a metal contact of a device to flip-chip mount the device to the backside VCSEL.
4. The backside Vertical Cavity Surface Emitting Laser (VCSEL) of claim 1 , wherein the first mirror device is a first Distributed Braggs Reflector.
5. The backside Vertical Cavity Surface Emitting Laser (VCSEL) of claim 4 , wherein the second mirror device is a second Distributed Braggs Reflector.
6. The backside Vertical Cavity Surface Emitting Laser (VCSEL) of claim 1 , wherein the active region is a quantum well.
7. A backside Vertical Cavity Surface Emitting Laser (VCSEL) array comprising:
a substrate;
a first mirror device formed on the substrate;
an active layer applied directly on the first mirror device generating light;
a second mirror device directly attached to the active layer and having a thickness of 3-5 um;
a plurality of pillars formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE), wherein the second mirror device is directly attached to the active layer across an entire width of each pillar, each pillar exposing only a portion of the first mirror device, each pillar having a depth between 50% and 75% of the thickness of the second mirror device, each pillar having a diameter between 5-50 um;
a first metal contact formed over a top section of each of the pillars;
a second metal contact formed on the substrate; and
a plurality of openings formed in the second metal contact, wherein each opening is aligned with a corresponding pillar.
8. The backside Vertical Cavity Surface Emitting Laser (VCSEL) array claim 7 , comprising a device flip-chip mounted to the backside VCSEL array.
9. The backside Vertical Cavity Surface Emitting Laser (VCSEL) array of claim 7 , comprising:
solder formed on the first metal contacts;
wherein the solder attaches to metal contacts of a device to flip-chip mount the device to the backside VCSEL array.
10. The backside Vertical Cavity Surface Emitting Laser (VCSEL) array of claim 7 , wherein the first mirror device and the second mirror device are Distributed Braggs Reflectors.
11. The backside Vertical Cavity Surface Emitting Laser (VCSEL) array claim 7 , wherein the first mirror device is a Distributed Braggs Reflector.
12. The backside Vertical Cavity Surface Emitting Laser (VCSEL) array claim 7 , wherein the second mirror device is a Distributed Braggs Reflector.
13. The backside Vertical Cavity Surface Emitting Laser (VCSEL) array claim 7 , wherein the active region is a quantum well.
14. A backside Vertical Cavity Surface Emitting Laser (VCSEL) comprising: a substrate; a first mirror device formed on the substrate; an active layer applied directly on the first mirror device generating light; a second mirror device directly attached to the active layer; a ledge formed only in the second mirror device by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE) forming a pillar, the pillar has a diameter between 5-50 um, wherein the second mirror device is directly attached to the active layer across an entire width of each pillar; a first metal contact formed over a top section of the pillar; a second metal contact formed on the substrate; and an opening formed in the second metal contact and aligned with the pillar.