Current collector, electrode plate including the same and electrochemical device
A current collector, an electrode plate, and an electrochemical device are provided in the present disclosure. The current collector includes an insulation layer and at least one conductive layer. The insulation layer is used to support the conductive layer. The at least one conductive layer is used to support an electrode active material layer and is located above at least one surface of the insulation layer. The insulation layer has a density smaller than that of the conductive layer. A metal protective layer is arranged on at least one surface of each of the at least one conductive layer.
1. A current collector, comprising: an insulation layer and at least one conductive layer, wherein the insulation layer is used to support the conductive layer, and the at least one conductive layer is used to support an electrode active material layer and is located above at least one surface of the insulation layer,
wherein the insulation layer has a density smaller than a density of the conductive layer,
wherein a metal protective layer is arranged on at least one surface of each of the at least one conductive layer,
wherein the metal protective layer is arranged on a surface of one conductive layer of the at least one conductive layer facing away from the insulation layer,
wherein a metal oxide protective layer is arranged on a surface of the one conductive layer of the at least one conductive layer facing towards the insulation layer,
wherein the insulation layer has a thermal shrinkage at 200° C. of smaller than or equal to 1.5%, and the insulation layer has an elongation at break of 16% to 120%, and
a bonding force between the insulation layer and the at least one conductive layer is F, and F≥400 N/m.
2. The current collector according to claim 1 , wherein the conductive layer has a thickness of D2 satisfying: 200 nm≤D2≤1.5 μm,
wherein the conductive layer has a resistivity smaller than or equal to 8.0×10 −8 Ω·m.
3. The current collector according to claim 2 , wherein the metal protective layer has a thickness of D3, and D3≤1/10 D2 and 1 nm≤D3≤200 nm.
4. The current collector according to claim 2 , wherein the metal protective layer has a thickness of D3 and the metal oxide protective layer has a thickness of D3′ satisfying: D3′≤1/10 D2, 1 nm≤D3′≤200 nm, D3>D3′, 1/2 D3≤D3′≤4/5 D3.
5. The current collector according to claim 1 , wherein the insulation layer has a thickness of D1 satisfying: 1 μm≤D1≤10 μm,
wherein the insulation layer has a tensile strength greater than or equal to 150 MPa.
6. The current collector according to claim 1 , wherein the metal protective layer is made of a material selected from a group consisting of nickel, chromium, nickel-based alloy, and copper-based alloy, or combinations thereof.
7. The current collector according to claim 1 , wherein the insulation layer has a thickness of D1 satisfying: 1 μm≤D1≤5 μm.
8. An electrode plate, comprising: a current collector and an electrode active material layer formed on a surface of the current collector,
wherein current collector comprises: an insulation layer and at least one conductive layer, wherein the insulation layer is used to support the conductive layer, and the at least one conductive layer is used to support the electrode active material layer and is located above at least one surface of the insulation layer,
wherein the insulation layer has a density smaller than a density of the conductive layer,
wherein a metal protective layer is arranged on at least one surface of each of the at least one conductive layer,
wherein the metal protective layer is arranged on a surface of one conductive layer of the at least one conductive layer facing away from the insulation layer,
wherein a metal oxide protective layer is arranged on a surface of the one conductive layer of the at least one conductive layer facing towards the insulation layer, and
wherein the insulation layer has a thermal shrinkage at 200° C. of smaller than or equal to 1.5%, and the insulation layer has an elongation at break of 16% to 120%, and
a bonding force between the insulation layer and the at least one conductive layer is F, and F≥400 N/m.
9. The electrode plate according to claim 8 , wherein the conductive layer has a thickness of D2 satisfying: 200 nm≤D2≤1.5 μm,
wherein the conductive layer has a resistivity smaller than or equal to 8.0×10 −8 Ω·m.
10. The electrode plate according to claim 8 , wherein the insulation layer has a thickness of D1 satisfying: 1 μm≤D1≤10 μm,
wherein the insulation layer has a tensile strength greater than or equal to 150 MPa.
11. The electrode plate according to claim 8 , wherein the metal protective layer is made of a material selected from a group consisting of nickel, chromium, nickel-based alloy, and copper-based alloy, or combinations thereof.
12. An electrochemical device, comprising: a positive electrode plate, a separator, and a negative electrode plate, wherein the positive electrode plate and/or the negative electrode plate is an electrode plate,
wherein the electrode plate comprises: a current collector and an electrode active material layer formed on a surface of the current collector,
wherein current collector comprises: an insulation layer and at least one conductive layer, wherein the insulation layer is used to support the conductive layer, and the at least one conductive layer is used to support the electrode active material layer and is located above at least one surface of the insulation layer,
wherein the insulation layer has a density smaller than a density of the conductive layer,
wherein a metal protective layer is arranged on at least one surface of each of the at least one conductive layer,
wherein the metal protective is arranged on a surface of one conductive layer of the at least one conductive layer facing away from the insulation layer,
wherein a metal oxide protective layer is arranged on a surface of the one conductive layer of the at least one conductive layer facing towards the insulation layer, and
wherein the insulation layer has a thermal shrinkage at 200° C. of smaller than or equal to 1.5%, and the insulation layer has an elongation at break of 16% to 120%, and
a bonding force between the insulation layer and the at least one conductive layer is F, and F≥400 N/m.
13. The electrochemical device according to claim 12 , wherein the conductive layer has a thickness of D2 satisfying: 200 nm≤D2≤1.5 μm,
wherein the conductive layer has a resistivity smaller than or equal to 8.0×10 −8 Ω·m.
14. The electrochemical device according to claim 12 , wherein the insulation layer has a thickness of D1 satisfying: 1 μm≤D1≤10 μm,
wherein the insulation layer has a tensile strength greater than or equal to 150 MPa.
15. The electrochemical device according to claim 12 , wherein the metal protective layer is made of a material selected from a group consisting of nickel, chromium, nickel-based alloy, and copper-based alloy, or combinations thereof.