Crack-resistant silicon-based planarizing compositions, methods and films
A composition for planarizing a semiconductor device surface includes a silicon-based material and a cross-linker including a siloxane compound according to the general formula: wherein R is an aliphatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.
1. A composition for planarizing a surface of a semiconductor device, the composition comprising:
a silicon-based material including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
at least one solvent;
a catalyst; and
a cross-linker including a siloxane compound according to the general formula:
wherein R is an aliphatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.
2. The composition of claim 1 , wherein the cross-linker includes at least one of: bis-(trimethoxysilylpropyl) amine, bis(triethoxysilyl) methane, 1,2-bis(triethoxysilyl) ethane and 1-(triethoxysilyl)-2-(diethoxymethylsilyl) ethane.
3. The composition of claim 2 , wherein the cross-linker consists of bis-(trimethoxysilylpropyl) amine.
4. The composition of claim 1 , wherein a concentration of the cross-linker is from 0.01 weight percent to 5 weight percent of the composition.
5. The composition of claim 1 , wherein the at least one solvent includes at least one of: ethyl lactate, propylene glycol propyl ether, propylene glycol monomethyl ether acetate, ethanol, isopropyl alcohol, and n-butyl acetate.
6. The composition of claim 1 , wherein the catalyst includes at least one of: tetramethylammonium acetate, tetramethylammonium hydroxide, tetrabutylammonium acetate, cetyltrimethylammonium acetate, and tetramethylammonium nitrate.
7. The composition of claim 1 , further including a surfactant.
8. A method for making a planarizing composition, the method comprising:
dissolving a silicon-based material in one or more solvents to form a silicon-based material solution, the silicon-based material including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
adding a catalyst to the silicon-based material solution; and
adding a cross-linker to the silicon-based material solution, the cross-linker includes a siloxane compound according to the general formula:
wherein R is an aliphatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.
9. The method of claim 8 , wherein the cross-linker includes at least one of: bis-(trimethoxysilylpropyl) amine, bis(triethoxysilyl) methane, 1,2-bis(triethoxysilyl) ethane, and 1-(triethoxysilyl)-2-(diethoxymethylsilyl) ethane.
10. The method of claim 9 , wherein the cross-linker consists of bis-(trimethoxysilylpropyl) amine.
11. The method of claim 8 , wherein the catalyst includes at least one of: tetramethylammonium acetate, tetramethylammonium hydroxide, tetrabutylammonium acetate, cetyltrimethylammonium acetate, and tetramethylammonium nitrate.
12. The method of claim 8 , wherein a concentration of the cross-linker is from 0.01 weight percent to 5 weight percent of the composition.
13. A planarizing film for a semiconductor device, the film comprising:
a cured silicon-based polymer including a polysiloxane resin, the polysiloxane resin formed from monomers consisting of methyltriethoxysilane, dimethyldiethoxysilane, and phenyl triethoxysilane;
a residue of a catalyst; and
a residue of a cross-linker, the residue of the cross-linker including a residue of a siloxane compound according to the general formula:
wherein R is an aliphatic comprising group and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are each independently selected from the group consisting of: H or an alkyl group with substituted or unsubstituted carbons.
14. The planarizing film of claim 13 , wherein the residue of the cross-linker includes a residue of at least one of: bis-(trimethoxysilylpropyl) amine, bis(triethoxysilyl) methane, 1,2-bis(triethoxysilyl) ethane, and 1-(triethoxysilyl)-2-(diethoxymethylsilyl) ethane.
15. The planarizing film of claim 13 , wherein the residue of the catalyst includes at least one of: tetramethylammonium acetate, tetramethylammonium hydroxide, tetrabutylammonium acetate, cetyltrimethylammonium acetate, and tetramethylammonium nitrate.
16. The planarizing film of claim 13 , wherein the planarizing film has a film thickness over a portion of the semiconductor device that is greater than 3 microns.