Crack-resistant polysiloxane dielectric planarizing compositions, methods and films
A composition for planarizing a semiconductor device surface includes a catalyst, at least one solvent, and at least one polysiloxane resin including polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks are according to the general formula: wherein R 1 , R 2 are each independently selected from the group consisting of: an aryl group or an alkyl group, with substituted or unsubstituted carbons.
1. A composition for planarizing a surface of a semiconductor device, the composition comprising:
a catalyst;
at least one solvent, the at least one solvent including at least one of: ethyl lactate, propylene glycol propyl ether, propylene glycol monomethyl ether acetate, ethanol, isopropyl alcohol, and n-butyl acetate; and
at least one polysiloxane resin including polysilsesquioxane blocks and polysiloxane blocks, the polysiloxane blocks according to the general formula:
wherein R 1 , R 2 are each independently selected from the group consisting of: an aryl group or an alkyl group, with substituted or unsubstituted carbons, wherein a concentration of the polysiloxane blocks is from 0.1 mole percent to 35 mole percent of the polysiloxane resin.
2. The composition of claim 1 , wherein the polysiloxane blocks include at least one of: poly(diphenylsiloxane) blocks, poly(phenylmethylsiloxane) blocks, and poly(dimethylsiloxane) blocks.
3. The composition of claim 2 , wherein the polysiloxane blocks consist of poly (diphenylsiloxane) blocks and poly(phenylmethylsiloxane) blocks.
4. The composition of claim 2 , wherein the polysiloxane blocks consist of poly(dimethylsiloxane) blocks.
5. The composition of claim 1 , wherein the polysilsesquioxane blocks include at least one of: poly(methylsilsesquioxane) blocks and poly(phenylsilsesquioxane) blocks.
6. The composition of claim 1 , wherein a weight average molecular weight of the polysiloxane blocks in the composition is from 100 Da to 5,000 Da.
7. The composition of claim 1 , wherein the catalyst includes at least one of:
tetramethylammonium acetate, tetramethylammonium hydroxide, tetrabutylammonium acetate, cetyltrimethylammonium acetate, and tetramethylammonium nitrate.
8. The composition of claim 1 , further including a surfactant.
9. The composition of claim 1 , further including a cross-linker.
10. The composition of claim 1 , wherein the at least one polysiloxane resin includes a first polysiloxane resin and a second polysiloxane resin.
11. The composition of claim 1 , wherein the at least one polysiloxane resin is a first polysiloxane resin, and further including a second polysiloxane resin, the second polysiloxane resin consisting of a poly(silsesquioxane) resin.
12. A method for making a planarizing composition, the method comprising:
dissolving at least one polysiloxane resin in one or more solvents to form a resin solution, the at least one polysiloxane resin including polysilsesquioxane blocks and polysiloxane blocks, the polysiloxane blocks according to the general formula:
wherein R 1 , R 2 are each independently selected from the group consisting of: an aryl group or an alkyl group, with substituted or unsubstituted carbons, wherein a concentration of the polysiloxane blocks is from 0.1 mole percent to 35 mole percent of the polysiloxane resin; and
adding a catalyst to the resin solution, wherein the one or more solvents includes at least one of: ethyl lactate, propylene glycol propyl ether, propylene glycol monomethyl ether acetate, ethanol, isopropyl alcohol, and n-butyl acetate.
13. The method of claim 12 , wherein the polysiloxane blocks include at least one of: poly(diphenylsiloxane) blocks, poly(phenylmethylsiloxane) blocks, and poly(dimethylsiloxane) blocks.