Monolithic segmented LED array architecture
A first component with a first sidewall and a second component with a second sidewall may be mounted onto an expandable film such that an original distance X is the distance between the first sidewall and the second sidewall. The expandable film may be expanded such that an expanded distance Y is the distance between the first sidewall and the second sidewall and expanded distance Y is greater than original distance X. A first sidewall material may be applied within at least a part of a space between the first sidewall and the second sidewall. The expandable film may be expanded such that a contracted distance Z is the distance between the first sidewall and the second sidewall, and contracted distance Z is less than expanded distance Y.
1. A method of forming a light emitting device, the method comprising:
providing a first wavelength conversion structure and a second wavelength conversion structure mounted on a film, each wavelength conversion structure comprising a bottom surface attached to the film, an oppositely positioned top surface, and sidewall surfaces connecting the top and bottom surfaces, the wavelength conversion structures mounted to the film with a sidewall of the first wavelength conversion structure and an adjacent sidewall of the second wavelength conversion structure spaced apart from each other by a distance Y;
with the adjacent sidewalls spaced apart from each other by the distance Y, applying an optical isolation material between the adjacent sidewalls of the first wavelength conversion structure and the second wavelength conversion structure; and
after applying the optical isolation material contracting the film to reduce spacing between the adjacent sidewalls to a distance Z less than Y while the first and second wavelength conversion structures remain attached to the film.
2. The method of claim 1 , wherein contracting the film comprises adjusting a temperature of the film.
3. The method of claim 1 , wherein the film comprises a plurality of thick sections and a plurality thin sections, the thick sections having a height at least two times a height of the thin sections, and the wavelength conversion structures are mounted on thick sections of the film.
4. The method of claim 3 , wherein the bottom surfaces of the wavelength conversion structures have areas greater than the thick sections of the film to which they are attached.
5. The method of claim 1 , comprising attaching light emitting semiconductor diode structures to the top surfaces of the wavelength conversion structures after contracting the film.
6. The method of claim 1 , wherein the optical isolation material comprises at least one of: an absorptive material, a light reflective material, or a Distributed Bragg Reflector.
7. The method of claim 1 , wherein:
contracting the film comprises adjusting a temperature of the film;
the film comprises a plurality of thick sections and a plurality thin sections, the thick sections having a height at least two times a height of the thin sections; and
the wavelength conversion structures are mounted on thick sections of the film.
8. The method of claim 7 , comprising attaching light emitting semiconductor diode structures to the top surfaces of the wavelength conversion structures after contracting the film.
9. The method of claim 1 , wherein providing the first wavelength conversion structure and the second wavelength conversion structure mounted on the film comprises:
mounting the first wavelength conversion structure and the second wavelength conversion structure on the film with the spacing between the adjacent sidewalls a distance X less than Y; and
after mounting the first wavelength conversion structure and the second wavelength conversion structure on the film, expanding the film to increase the spacing between the first wavelength conversion structure and the second wavelength conversion structure to the distance Y,
and wherein the optical isolation material is applied between the adjacent sidewalls only after expanding the film and with the first and second wavelength conversion structures remaining attached to the film.
10. The method of 9 , wherein expanding the film comprises adjusting a temperature of the film.
11. The method of claim 9 , comprising attaching light emitting semiconductor diode structures to the top surfaces of the wavelength conversion structures after contracting the film.
12. A method of forming a light emitting device, the method comprising:
mounting a first wavelength conversion structure and a second wavelength conversion structure onto a film, each wavelength conversion structure comprising a bottom surface attached to the film, an oppositely positioned top surface, and sidewall surfaces connecting the top and bottom surfaces, the wavelength conversion structures mounted to the film with a sidewall of the first wavelength conversion structure and an adjacent sidewall of the second wavelength conversion structure spaced apart from each other by a distance X;
expanding the film such that the sidewall of the first wavelength conversion structure and the adjacent sidewall of the second wavelength conversion structure are spaced apart from each other by an expanded distance Y greater than X; and
applying an optical isolation material between the adjacent sidewalls of the first and second wavelength conversion structures only after expanding the film and with the first and second wavelength conversion structures remaining attached to the film,
the film comprising a plurality of thick sections and a plurality thin sections, the thick sections having a height at least two times a height of the thin sections, and the wavelength conversion structures are mounted on thick sections of the film, the bottom surfaces of the wavelength conversion structures having areas greater than the thick sections of the film to which they are attached.
13. The method of claim 12 , wherein expanding the film comprises adjusting a temperature of the film.
14. The method of claim 12 , wherein the optical isolation material comprises at least one of: an absorptive material, a light reflective material, or a Distributed Bragg Reflector.
15. The method of claim 12 , comprising attaching light emitting semiconductor diode structures to the top surfaces of the wavelength conversion structures after expanding the film.
16. A method of forming a light emitting device, the method comprising:
mounting a first wavelength conversion structure and a second wavelength conversion structure onto a film, each wavelength conversion structure comprising a bottom surface attached to the film, an oppositely positioned top surface, and sidewall surfaces connecting the top and bottom surfaces, the wavelength conversion structures mounted to the film with a sidewall of the first wavelength conversion structure and an adjacent sidewall of the second wavelength conversion structure spaced apart from each other by a distance X;
expanding the film such that the sidewall of the first wavelength conversion structure and the adjacent sidewall of the second wavelength conversion structure are spaced apart from each other by an expanded distance Y greater than X; and
applying an optical isolation material between the adjacent sidewalls of the first and second wavelength conversion structures only after expanding the film and with the first and second wavelength conversion structures remaining attached to the film; and
attaching light emitting semiconductor diode structures to the top surfaces of the wavelength conversion structures after expanding the film.
17. The method of claim 16 , wherein expanding the film comprises adjusting a temperature of the film.
18. The method of claim 16 comprising, after expanding the film, mounting a third wavelength conversion structure on the film between the first wavelength conversion structure and the second wavelength conversion structure, the third wavelength conversion structure comprising a bottom surface attached to the film, an oppositely positioned top surface, and sidewall surfaces connecting the top and bottom surfaces.
19. The method of claim 18 , comprising applying the optical isolation material between adjacent sidewalls of the first wavelength conversion structure and the third wavelength conversion structure, and between adjacent sidewalls of the third wavelength conversion structure and the second wavelength conversion structure.
20. The method of claim 19 , wherein the optical isolation material comprises at least one of: an absorptive material, a light reflective material, or a Distributed Bragg Reflector.
21. The method of claim 16 , wherein the optical isolation material comprises at least one of: an absorptive material, a light reflective material, or a Distributed Bragg Reflector.
22. The method of claim 16 , wherein the film comprises a plurality of thick sections and a plurality thin sections, the thick sections have a height at least two times a height of the thin sections, and the wavelength conversion structures are mounted on the thick sections of the film.