Converter fill for LED array

1. A method comprising:

providing a wavelength converting structure comprising

a mesh comprising intersecting walls defining an array of elements;

each element comprising:

a wavelength converting layer having a first surface, an oppositely positioned second surface, and sidewalls connecting the first and second surfaces;

an optical material layer having a first surface, an oppositely positioned second surface, and sidewalls connecting the first and second surfaces, the first surface in direct contact with the second surface of the wavelength converting layer, the sidewalls of the optical material layer parallel to the sidewalls of the wavelength converting layer;

an optical isolation material coating the sidewalls of the wavelength converting layer and the optical material layer, the optical isolation material in direct contact with the walls of the mesh; and

a trace sacrificial material between the optical material layer and the wavelength converting layer;

providing an array of semiconductor light emitting devices (LED array) having a plurality of light emitting devices;

aligning the wavelength converting structure with the LED array so that each light emitting device of the LED array is aligned with an element of the wavelength converting structure; and

after aligning the wavelength converting structure with the LED array, attaching each of the light emitting devices to the wavelength converting layer within the aligned element to form pixels.

2. The method of claim 1 , wherein providing a wavelength converting structure comprises:

providing a wafer mesh having an array of cavities separated by intersecting cavity walls;

applying the optical isolation material to the cavity walls of the wafer mesh; and

after applying the optical isolation material, depositing the wavelength converting layer and the optical material layer into the cavities.

3. The method of claim 2 , wherein depositing the wavelength converting layer and the optical material layer into the cavities comprises:

depositing a sacrificial layer into the cavities;

removing a portion of the sacrificial layer to create a first gap area such that the cavities include the first gap area and a remaining sacrificial layer;

depositing an optical material into at least a portion of the first gap area to form the optical material layer;

removing a portion of the remaining sacrificial layer to form a second gap area and leave the trace sacrificial material; and

depositing the wavelength converting layer into the second gap area.

4. The method of claim 2 , wherein the cavities are each less than 500 microns wide.

5. The method of claim 1 , comprising after attaching the light emitting devices, cutting the walls of the mesh.

6. The method of claim 1 , wherein the optical material layer comprises at least one of a scattering material or an off-state white material.

7. The method of claim 1 , wherein providing the wavelength converting structure comprises depositing the optical isolation material onto the mesh in an ALD process.

8. The method of claim 1 , further comprising:

after aligning the wavelength converting structure with the LED array, curing the wavelength converting structure with the LED array at a temperature in a range from 150° C. to 180° C.

9. The method of claim 1 , wherein the distance between centers of pixels that are adjacent to each other is 120 microns or less.

10. The method of claim 9 , wherein the distance between centers of pixels that are adjacent to each other is 45 microns or less.

11. The method of claim 1 , further comprising:

after attaching the light emitting devices, removing part of the walls of the mesh to form channels between the pixels.

12. The method of claim 11 , further comprising:

filling the channels between the pixels with a second optical isolation material.

13. The method of claim 11 , wherein removing part of the walls of the mesh comprises employing lasers.

14. The method of claim 11 , wherein removing part of the walls of the mesh comprises employing chemical treatment.

15. A method comprising:

providing a wafer mesh having an array of cavities separated by intersecting cavity walls;

applying an optical isolation material to the cavity walls of the wafer mesh;

depositing a sacrificial layer into the cavities;

after applying the optical isolation material, depositing an optical material layer into the cavities so that the optical material layer is in direct contact with the optical isolation material, the depositing the optical material layer comprising:

removing a portion of the sacrificial layer to create a first gap area such that the cavities include the first gap area and a remaining sacrificial layer; and

depositing an optical material into at least a portion of the first gap area;

after applying the optical isolation material, depositing a wavelength converting layer into the cavities so that the wavelength converting layer is in direct contact with the optical isolation material, the depositing the wavelength converting layer comprising:

removing a portion of the remaining sacrificial layer to form a second gap area; and

depositing the wavelength converting layer into the second gap area.

16. The method of claim 15 , wherein the optical material layer comprises at least one of a scattering material or an off-state white material.

17. The method of claim 15 , wherein the cavities are each less than 500 microns wide.

18. The method of claim 15 , wherein the element of the wavelength converting layer has greater width than the light emitting device it is attached to.

19. The method of claim 15 , wherein an element of the optical material layer has greater width than the light emitting device it is disposed over.

20. The method of claim 15 , wherein the sacrificial layer is deposited into the cavities by one of screen-printing, contact printing, dip coating, spray coating, and lithography.