Optoelectronic device and the manufacturing method thereof
An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.
1. An optoelectronic device comprising:
a substrate;
a semiconductor stack on the substrate and having a first width, a first side and a second side opposite to the first side;
a first contact layer on the first side;
a reflecting layer on the second side and having a second width larger than the first width;
a metal layer between the substrate and the reflecting layer; and
a first window layer between the semiconductor stack and the first contact layer and comprising a material different from the semiconductor stack.
2. The optoelectronic device of claim 1 , further comprising a conductive layer between the semiconductor stack and the reflecting layer.
3. The optoelectronic device of claim 2 , wherein the conductive layer comprises metal oxide.
4. The optoelectronic device of claim 3 , wherein the metal oxide comprises indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide, zinc aluminum oxide, or zinc tin oxide.
5. The optoelectronic device of claim 2 , wherein the conductive layer has a thickness of 0.005 μm˜0.2 μm.
6. The optoelectronic device of claim 1 , wherein the metal layer comprises In, Au, Sn, Pb, InAu, SnAu, or the alloy thereof.
7. The optoelectronic device of claim 1 , further comprising a second contact layer between the semiconductor stack and the reflecting layer.
8. The optoelectronic device of claim 7 , wherein the second contact layer comprises a plurality of dots that are arranged in a two-dimensional array.
9. The optoelectronic device of claim 7 , wherein the second contact layer substantially do not overlap with the first contact layer in vertical direction.
10. The optoelectronic device of claim 1 , wherein the reflecting layer comprises metal.
11. The optoelectronic device of claim 10 , wherein the metal comprises Ag.
12. The optoelectronic device of claim 1 , further comprising a passivation layer covering the first window layer and the first contact layer.
13. The optoelectronic device of claim 1 , further comprising a second window layer between the semiconductor stack and the reflecting layer.
14. The optoelectronic device of claim 1 , wherein the first window layer has a roughened surface and a third width smaller than the first width.
15. The optoelectronic device of claim 1 , wherein the substrate has a width larger than the first width and comprises Si.
16. The optoelectronic device of claim 1 , wherein the metal layer has a width larger than the first width.
17. The optoelectronic device of claim 1 , further comprising a first pad under the first contact layer and a second pad on the substrate.
18. The optoelectronic device of claim 16 , wherein the semiconductor stack has a border, and the first contact layer further comprises a first portion and a plurality of fingers connecting the first portion and extending toward the border.
19. The optoelectronic device of claim 1 , wherein the first contact layer comprises BeAu or GeAu.
20. The optoelectronic device of claim 13 , further comprising an insulating layer between the second window layer and the reflecting layer, wherein the second window layer has a first refractive index and the insulating layer has a second refractive index, and a difference between the first refractive index and the second refractive index is larger than 1.5.