Optoelectronic device and the manufacturing method thereof

1. An optoelectronic device comprising:

a semiconductor structure having a first side and a second side opposite to the first side;

a first pad at the first side;

a first finger connected to the electrode pad and having a first width;

an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface;

a contact layer covering the bottom surface and the side surface.

2. The optoelectronic device of claim 1 , wherein the contact layer comprises a plurality of dots arranged in a two-dimensional array.

3. The optoelectronic device of claim 2 , wherein the plurality of dots substantially does not overlap with the first pad and the first finger in vertical direction.

4. The optoelectronic device of claim 2 , wherein the plurality of dots is separated to each other and formed of a semiconductor material.

5. The optoelectronic device of claim 1 , further comprising a second finger directly extending from the first pad.

6. The optoelectronic device of claim 5 , wherein the second finger is substantially parallel to the first finger in a top view of the optoelectronic device.

7. The optoelectronic device of claim 5 , wherein the contact layer comprises a first contact area and a second contact area which are between the first finger and the second finger.

8. The optoelectronic device of claim 5 , wherein the contact layer comprises a first contact area between the first finger and the second finger, and a distance between the first contact area and the second finger is between 10 μm and 30 μm.

9. The optoelectronic device of claim 7 , wherein the first contact area, the second contact area and both have a circular shape in a top view of the optoelectronic device.

10. The optoelectronic device of claim 7 , wherein the first contact area and the second contact area substantially do not overlap with the first pad and the first finger in a vertical direction.

11. The optoelectronic device of claim 5 , wherein the insulating layer further comprises a second part under the second finger.

12. The optoelectronic device of claim 11 , wherein the contact layer comprises a first contact area between the first part and a second part.

13. The optoelectronic device of claim 12 , wherein the first contact area has a third width smaller than the second width.

14. The optoelectronic device of claim 11 , wherein the insulating layer further comprises a third part between the first part and the second part, and the contact layer further comprises a second contact area between the second part and the third part.

15. The optoelectronic device of claim 1 , wherein the semiconductor structure comprises a window layer which has a roughened surface.

16. The optoelectronic device of claim 5 , wherein a distance between the second finger and the first finger is between 60 μm and 150 μm.

17. The optoelectronic device of claim 1 , further comprising a substrate having a first length and bonded to the contact layer.

18. The optoelectronic device of claim 17 , further comprising a second finger directly extending from the first pad, and a distance between the second finger and the first finger is between 5% and 15% of the first length.

19. The optoelectronic device of claim 17 , further comprising a second pad on the substrate.

20. The optoelectronic device of claim 17 , wherein the second width is between 0.8% and 8% of the first length.