Composition for etching and manufacturing method of semiconductor device using the same
The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent. The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
1. A composition for etching, comprising,
a first inorganic acid,
a first additive represented by Chemical Formula 1, and
a solvent,
wherein the first inorganic acid is phosphoric acid, wherein the composition for etching selectively etches a nitride layer with respect to an oxide layer,
wherein etch selectivity of the composition for etching is from 24.86 to 6512.
(In Chemical Formula 1, X is N,
R1 to R6 are each, independently, selected from the group consisting of hydrogen, a C1-C20 alkyl group, a Cl-C20 alkoxy group, a C2-C20 alkenyl group, a C3-C20 cycloalkyl group, a C1-C20 aminoalkyl group, a C6-C20 aryl group, a C1-C20 alkyl carbonyl group, a C1-C20 alkyl carbonyloxy group, and a C1-C10 cyano alkyl group).
2. The composition for etching of claim 1 , wherein the composition for etching includes 0.01 to 15 wt % of the first additive, 70 to 99 wt % of the first inorganic acid, and the remaining amount as solvent.
3. The composition for etching of claim 1 , wherein the composition for etching further comprises a second additive comprising a silane inorganic acid salt produced by reacting a second inorganic acid with a silane compound.
4. A method of manufacturing a semiconductor device, comprising an etching process performed using the composition for etching of claim 1 .