High luminance light emitting device and method for creating a high luminance light emitting device
A light emitting device having first, second and third dimensions that are orthogonal may include a light emitting semiconductor device configured to emit light via a first surface in a plane formed by the first and second dimensions. The light emitting device may further include a wavelength converting structure disposed on the first surface of the light emitting semiconductor device, the wavelength converting structure extending beyond the light emitting semiconductor device in the first dimension and the light emitting semiconductor device extending beyond the wavelength converting structure in the second dimension. The light emitting device may further include one or more optical extraction features in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension and/or formed by the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.
1. A light emitting device having first, second and third dimensions that are orthogonal, the light emitting device comprising:
a light emitting semiconductor structure configured to emit light via a first surface in a plane formed by the first and second dimensions, the light emitting semiconductor structure having a length extending in the first dimension and a length extending in the second dimension; and
a wavelength converting structure disposed on the first surface of the light emitting semiconductor structure, the wavelength converting structure having a length extending in the first dimension longer than the length of the light emitting semiconductor structure in the first dimension and the wavelength converting structure having a length extending in the second dimension shorter than the length of the light emitting semiconductor structure in the second dimension.
2. The light emitting device of claim 1 , the wavelength converting structure being attached to the first surface of the light emitting semiconductor structure with an optically clear bonding layer.
3. The light emitting device of claim 1 further comprising:
optical extraction features in at least one gap formed by the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension.
4. The light emitting device of claim 1 further comprising:
optical extraction features in at least one gap formed by the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension.
5. The light emitting device of claim 1 , light emitting semiconductor structure comprising a light emitting diode (LED) die configured to emit blue light.
6. The light emitting device of claim 1 , the wavelength converting structure comprising a phosphor plate.
7. The light emitting device of claim 6 , the phosphor plate comprising a monolithic phosphor block or phosphor grains in a host matrix material.
8. The light emitting device of claim 1 , the wavelength converting structure extending beyond the light emitting semiconductor structure in the first dimension by a length of up to 20% of a die length in the light emitting semiconductor structure on each side.
9. The light emitting device of claim 1 , the light emitting semiconductor structure extending beyond the wavelength converting structure in the second dimension by a length of up to 20% of a die length in the light emitting semiconductor structure on each side.
10. An array of light emitting devices formed by a plurality of light emitting devices as in claim 1 .