High density interconnect for segmented LEDs
A light emitting diode (LED) may include a conductive via in a first portion of an epitaxial layer and a first contact on a second portion of the epitaxial layer. The first portion and the second portion may be separated by an isolation region. The LED may include a transparent conductive layer on the epitaxial layer.
1. A method of forming an LED device, the method comprising:
forming an electrically conductive via that fills a contact hole formed in a first portion of an epitaxial layer;
forming a p-type contact on a second portion of the epitaxial layer, the first portion and the second portion separated by an isolation region having a length extending in a first direction;
forming an n-type contact in the first portion of the pitaxial layer and directly coupled to the electrically conductive via; and
forming a transparent electrically conductive layer on the epitaxial layer having a length extending in a second direction, the second direction substantially perpendicular to the first direction.
2. The method of claim 1 , wherein the epitaxial layer comprises:
an n-type layer;
an active region; and
a p-type layer.
3. The method of claim 2 , wherein the isolation region and the electrically conductive via extend through the p-type layer, the active region, and a portion of the n-type layer.
4. The method of claim 2 , wherein the transparent electrically conductive layer is on the n-type layer.
5. The method of claim 2 , wherein the p-type contact is directly on the p-type layer.
6. The method of claim 1 , wherein the LED device has a size in a range of from 25 microns to 1000 microns.
7. The method of claim 1 , wherein the LED device has a size in a range of from 50 microns to 500 microns.
8. The method of claim 1 , wherein the LED device is segmented.
9. The method of claim 1 , wherein the LED device is a monolithic LED array.