High brightness directional direct emitter with photonic filter of angular momentum
A nano-structure layer is disclosed. The nano-structure layer includes a plurality of nano-photonic structures that are configured in a first configuration such that light incident upon the nano-structured layer below a cutoff angle passes through the nano-structured layer and light incident upon the nano-structured layer above the cutoff angle is reflected back in direction of the incidence.
1. A light emitting device comprising:
a semiconductor diode structure;
a transparent substrate transparent to light emitted by the semiconductor diode structure and comprising a top surface, an oppositely positioned bottom surface, and side surfaces connecting the top and bottom surfaces, the bottom surface disposed on or adjacent the semiconductor diode structure; and
a nanostructured layer disposed on or adjacent the top surface of the transparent substrate and comprising a plurality of nano-antennas disposed in a dielectric medium in a periodic or a-periodic arrangement such that light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence less than a cut-off angle is transmitted through the nanostructured layer and light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence greater than or equal to the cut-off angle is reflected back into the transparent substrate.
2. The light emitting device of claim 1 , wherein the cut-off angle is less than or equal to 10 degrees.
3. The light emitting device of claim 1 , wherein the cut-off angle is less than or equal to 20 degrees.
4. The light emitting device of claim 1 , wherein light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence less than the cut-off angle is transmitted through the nanostructured layer within a cone angle of +/−60 degrees.
5. The light emitting device of claim 4 , wherein light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence less than the cut-off angle is transmitted through the nanostructured layer within a cone angle of +/−45 degrees.
6. The light emitting device of claim 5 , wherein light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence less than the cut-off angle is transmitted through the nanostructured layer within a cone angle of +/−5 degrees.
7. The light emitting device of claim 1 , wherein the arrangement of nano-antennas is periodic.
8. The light emitting device of claim 1 , wherein the arrangement of nano-antennas is a-periodic.
9. The light emitting device of claim 1 , wherein each nano-antenna has a largest dimension less than or equal to a wavelength of light emitted by the semiconductor diode structure.
10. The light emitting device of claim 1 , wherein at least one nano-antenna is a single light scattering object.
11. The light emitting device of claim 1 , wherein at least one nano-antenna comprises two or more light scattering objects.
12. The light emitting device of claim 1 , wherein the plurality of nano-antennas comprises a plurality of nano-cones.
13. The light emitting device of claim 12 , wherein the nano-cones each comprise a coaxial dimmer or a vertical dimmer.
14. A light emitting device comprising:
a semiconductor diode structure;
a transparent substrate transparent to light emitted by the semiconductor diode structure and comprising a top surface, an oppositely positioned bottom surface, and side surfaces connecting the top and bottom surfaces, the bottom surface disposed on or adjacent the semiconductor diode structure; and
a nanostructured layer disposed on or adjacent the top surface of the transparent substrate and comprising a plurality of nano-antennas arranged in a hexagonal or rectangular lattice such that light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence less than a cut-off angle is transmitted through the nanostructured layer and light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence greater than or equal to the cut-off angle is reflected back into the transparent substrate.
15. The light emitting device of claim 14 , wherein the plurality of nano-antennas is arranged in a hexagonal lattice.
16. The light emitting device of claim 14 , wherein the plurality of nano-antennas is arranged in a rectangular lattice.
17. A light emitting device comprising:
a semiconductor diode structure;
a transparent substrate transparent to light emitted by the semiconductor diode structure and comprising a top surface, an oppositely positioned bottom surface, and side surfaces connecting the top and bottom surfaces, the bottom surface disposed on or adjacent the semiconductor diode structure; and
a nanostructured layer disposed on or adjacent the top surface of the transparent substrate and comprising a plurality of nano-antennas arranged with a spatial gradient of phase such that light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence less than a cut-off angle is transmitted through the nanostructured layer and light emitted by the semiconductor diode structure into the transparent substrate and incident on the nanostructured layer at an angle of incidence greater than or equal to the cut-off angle is reflected back into the transparent substrate.
18. The light emitting device of claim 17 , wherein the plurality of nano-antennas comprises a plurality of nano-cones.
19. The light emitting device of claim 18 , wherein the nano-cones each comprise a vertical dimer.
20. The light emitting device of claim 18 , wherein the nano-cones each comprise a coaxial dimer.