Method of forming nanocrystalline graphene, and device including nanocrystalline graphene
A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.
1. A method of forming nanocrystalline graphene, the method comprising:
arranging a substrate in a reaction chamber;
forming a protective layer on the substrate;
injecting into the reaction chamber a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas;
generating a plasma of the reaction gas in the reaction chamber; and
growing a nanocrystalline graphene directly on a surface of the protective layer using the plasma of the reaction gas at a temperature of 700° C. or lower, wherein
the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (GQDs), boron nitride (h-BN), and MX 2 , wherein
M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and
the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (TCMS).
2. The method of claim 1 , wherein
the substrate includes at least one of silicon dioxide (SiO 2 ), carbon-doped SiO 2 , silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ).
3. The method of claim 1 , wherein
the plasma of the reaction gas includes radio frequency (RF) plasma or microwave (MW) plasma.
4. The method of claim 1 , wherein
a power for generating the plasma of the reaction gas is in a range of about 10 W to about 4000 W.
5. The method of claim 1 , wherein
a volume ratio of the carbon source gas, the inert gas, and the hydrogen gas is 1-20:0-100:0-100 during the growing the nanocrystalline graphene.
6. The method of claim 1 , wherein
a process pressure during the growing the nanocrystalline graphene is in a range of about 0.005 Torr to about 10 Torr.
7. The method of claim 1 , wherein
the carbon source gas includes at least one of a hydrocarbon gas or a vapor of a liquid precursor containing carbon.
8. The method of claim 1 , wherein
the inert gas includes at least one of argon gas, nitrogen gas, helium gas, krypton gas, or xenon gas.
9. The method of claim 1 , wherein
the nanocrystalline graphene includes crystals of a size in a range of about 0.5 nm to about 70 nm.
10. The method of claim 1 , wherein
the forming the protective layer forms the protective layer only on a part of an upper surface of the substrate.
11. The method of claim 10 , wherein
the growing the nanocrystalline graphene does not form the nanocrystalline graphene on a part of the upper surface of the substrate on which the protective layer is not arranged.
12. The method of claim 10 , further comprising:
growing a second nanocrystalline graphene on the upper surface of the substrate, wherein
the growing the nanocrystalline graphene directly on the surface of the protective layer grows a first nanocrystalline graphene directly on the surface of the protective layer,
a thickness of the second nanocrystalline graphene is different from a thickness of the first nanocrystalline graphene formed on the upper surface of the protective layer, by using a same process time of plasma-enhanced chemical vapor deposition.
13. A device including nanocrystalline graphene, the device comprising:
a substrate;
a protective layer on the substrate; and
a nanocrystalline graphene on the protective layer, the nanocrystalline graphene including crystals having a size in a range from 0.5 nm to about 70 nm, wherein
the protective layer includes one selected from a self-assembled monolayer, graphene quantum dots (GQDs), boron nitride (h-BN), and MX 2 ,
M is a transition metal and X is a chalcogen element of a transition metal dichalcogenide monolayer (TMDC), and
the self-assembled monolayer includes one of an amorphous carbon layer, hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), or trichloromethylsilane (TCMS).
14. The device of claim 13 , wherein
the substrate includes at least one of silicon dioxide (SiO 2 ), carbon-doped SiO 2 , silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ).
15. The device of claim 13 , wherein
the nanocrystalline graphene is grown directly on a surface of the protective layer by using a process performed at a temperature of 700° C. or lower using a plasma of a reaction gas that includes a mixture of a carbon source gas, an inert gas, and hydrogen gas, wherein
the substrate includes at least one of carbon-doped SiO 2 , silsesquioxane, hydrogen silsesquioxane (HSQ), or methyl silsesquioxane (MSQ),
the protective layer includes one selected from the self-assembled monolayer, the graphene quantum dots (GQDs), and the MX 2 .
16. The device of claim 13 , wherein
the protective layer is only on a part of an upper surface of the substrate.
17. The device of claim 16 , wherein
the nanocrystalline graphene is not formed on a part of the upper surface of the substrate on which the protective layer is not arranged.
18. A device including nanocrystalline graphene, the device comprising:
a substrate;
a protective layer on the substrate, the protective layer being on only a part of an upper surface of the substrate;
a nanocrystalline graphene on the protective layer; and
a second nanocrystalline graphene on the upper surface of the substrate, wherein
the nanocrystalline graphene on the protective layer is a first nanocrystalline graphene on an upper surface of the protective layer, and
a thickness of first nanocrystalline graphene is different from a thickness of the second nanocrystalline graphene.