Optoelectronic semiconductor device having electrode junction with low reflectivity
An optoelectronic semiconductor device is disclosed. The optoelectronic semiconductor device includes a matrix substrate including a matrix circuit and a substrate, and a plurality of microsized optoelectronic semiconductor elements disposed separately and disposed on the matrix circuit. Each of the microsized optoelectronic semiconductor elements includes a first electrode and a second electrode, the matrix circuit includes a plurality of third electrodes and a plurality of fourth electrodes. The first electrodes are coupled with and electrically connected with the third electrodes respectively, or the second electrodes are coupled with and electrically connected with the fourth electrodes respectively. Reflectivities of at least some of junctions between the first electrode and the third electrode, or reflectivities of at least some of junctions between the second electrode and the fourth electrode are less than 20%.
1. An optoelectronic semiconductor device, comprising:
a matrix substrate including a matrix circuit and a substrate, wherein the matrix circuit is disposed on the substrate; and
a plurality of microsized optoelectronic semiconductor elements disposed separately and disposed on the matrix circuit;
wherein each of the microsized optoelectronic semiconductor elements includes a first electrode and a second electrode, the matrix circuit includes a plurality of third electrodes and a plurality of fourth electrodes, the first electrodes are coupled with and electrically connected with the third electrodes respectively, or the second electrodes are coupled with and electrically connected with the fourth electrodes respectively, and reflectivities of at least some of junctions between the first electrode and the third electrode or reflectivities of at least some of junctions between the second electrode and the fourth electrode are less than 20%.
2. The optoelectronic semiconductor device as recited in claim 1 , wherein the substrate is a soft substrate.
3. The optoelectronic semiconductor device as recited in claim 1 , wherein a length of a side of each of the microsized optoelectronic semiconductor elements is between 1 μm and 100 μm.
4. The optoelectronic semiconductor device as recited in claim 1 , wherein the optoelectronic semiconductor device is applied to a display panel, an advertisement board, a sensing device, a semiconductor device or an illuminating device.
5. The optoelectronic semiconductor device as recited in claim 4 , wherein the display panel is applied to a virtual reality (VR) head-mounted display, an augmented reality (AR) head-mounted display or a head-up display (HUD).
6. The optoelectronic semiconductor device as recited in claim 1 , wherein the optoelectronic semiconductor device is a single-color device or a full-color device.
7. The optoelectronic semiconductor device as recited in claim 1 , wherein the microsized optoelectronic semiconductor elements are arranged in an array, or arranged in a staggered manner.
8. The optoelectronic semiconductor device as recited in claim 1 , wherein a minimum interval between two adjacent microsized optoelectronic semiconductor elements is equal to or less than 1 μm.
9. The optoelectronic semiconductor device as recited in claim 1 , wherein the material of the microsized optoelectronic semiconductor elements is GaN, AlGaAs, GaP, GaAsP, or AlGaInP.
10. The optoelectronic semiconductor device as recited in claim 1 , wherein the substrate is made of transparent material or opaque material.
11. The optoelectronic semiconductor device as recited in claim 10 , wherein the transparent material is selected from glass, quartz, plastic material, rubber, glass fiber, and polymer.
12. The optoelectronic semiconductor device as recited in claim 10 , wherein the opaque substrate is a metal-fiberglass composite plate or a metal-ceramics composite plate.