Semiconductor laser device, manufacturing method thereof, and light emitting device
View Patent ↗A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.
1. A semiconductor laser device including a first clad layer, an active layer, a second clad layer, and an electrode layer in this order, the semiconductor laser device comprising:
an optical waveguide that extends from inside of an end face of a second end of the semiconductor laser device toward an end face of a first end of the semiconductor laser device; and
a reflecting surface which is arranged at an end on a second end side of the optical waveguide and which crosses the active layer,
wherein the reflecting surface has a dielectric film and a metal film in this order from the active layer, and
the electrode layer is arranged on the metal film.
2. The semiconductor laser device according to claim 1 , wherein the metal film extends from the reflecting surface to over a part of the second clad layer when the semiconductor laser device is seen in plan view.
3. The semiconductor laser device according to claim 1 , wherein
the semiconductor laser device further includes a recessed portion inside the end face of the second end, and
the reflecting surface is a side face on a first end side in the recessed portion.
4. The semiconductor laser device according to claim 3 , wherein when the semiconductor laser device is seen in plan view, the metal film extends to a position between the reflecting surface in the second clad layer or the recessed portion and an outer edge of the semiconductor laser device.
5. The semiconductor laser device according to claim 3 , wherein the recessed portion has a depth from the second clad layer to at least the first clad layer.
6. The semiconductor laser device according to claim 1 , wherein the end face of the first end is a cleavage surface.
7. The semiconductor laser device according to claim 1 , further comprising a dielectric film that covers the end face of the first end.
8. The semiconductor laser device according to claim 1 , further comprising a window region, which absorbs less laser light than a central portion of the optical waveguide, at both end portions of the optical waveguide.
9. The semiconductor laser device according to claim 1 , wherein the electrode layer includes an adhesion layer and a protective layer in this order from the metal film, and a material of the protective layer is at least one selected from a group including Ti, W, Ta, Nb, Ni, and Pt.
10. The semiconductor laser device according to claim 1 , wherein a metal of the metal film is at least one selected from a group including Au, Al, and Ag.
11. A light emitting device comprising the semiconductor laser device according to claim 1 .