IP Library Granted Patent US 10,727,032
Granted Patent B2
US 10,727,032 · App. 16/238,844 · Granted Jul 28, 2020

Multi-block sputtering target and associated methods and articles

Inventors: Gary Alan Rozak (Akron, OH); Mark E. Gaydos (Nashua, NH)
Assignee: H.C. STARCK INC.
H01J37/3429B22F1/0003B22F3/15B22F3/24C22C27/04C23C14/3407C23C14/3414H01J37/3491B22F2003/153B22F2003/247B22F2301/20B22F2998/10
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Quick Facts
Patent No.
US 10,727,032
App. No.
16/238,844
Granted
Jul 28, 2020
Kind
B2
Abstract

A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 μm width (e.g., less than about 50 μm width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

Claims (36)

1. A process comprising:

sputtering a sputtering target to form a film over a substrate, wherein the sputtering target comprises:

a) at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying element; and

b) a joint between the at least two consolidated blocks, which joins the blocks together to define a target body,

wherein (i) within the at least two consolidated blocks there is (a) a molybdenum phase, (b) a phase of the at least one additional alloying element, and (c) a third phase comprising an alloy of molybdenum at the at least one additional alloying element, (ii) the third phase is present in an amount greater than 30 volume percent, and (iii) the molybdenum phase is present in an amount greater than 30 volume percent.

2. The process of claim 1 , wherein the joint is free of any microstructure due to an added bonding agent.

3. A process comprising:

sputtering a sputtering target to form a film over a substrate, wherein the sputtering target comprises:

a) at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying element; and

b) a joint between the at least two consolidated blocks, which joins the blocks together to define a target body,

wherein (i) within the at least two consolidated blocks there is (a) a molybdenum phase, (b) a phase of the at least one additional alloying element, and (c) a third phase comprising an alloy of molybdenum at the at least one additional alloying element, (ii) the third phase is present in an amount greater than 30 volume percent, (iii) the joint is free of any microstructure due to an added bonding agent, and (iv) the sputtering target at the joint exhibits a transverse rupture strength per ASTM B528-10, of at least 800 MPa.

4. The process of claim 1 , wherein the joint is essentially free of any joint line of greater than about 300 μm width.

5. The process of claim 1 , wherein the joint is essentially free of any joint line greater than 200 μm width and the sputtering target at the joint has a transverse rupture strength per ASTM B528-10, of at least 900 MPa.

6. The process of claim 1 , wherein the at least one alloying element is selected from titanium, chromium, niobium, tantalum, tungsten, zirconium, hafnium, vanadium lithium, sodium, potassium or any combination thereof.

7. The process of claim 1 , wherein the at least two consolidated blocks include a first block and a second block, and the consolidated joint includes a direct contact between a prepared surface of first block with a prepared surface of the second block.

8. The process of claim 7 , wherein the prepared surfaces are milled edge surfaces having an average surface roughness (Ra) of less than about 5.1 μm.

9. The process of claim 7 , wherein the prepared surfaces are milled edge surfaces having an average surface roughness (Ra) of less than about 3.8 μm.

10. The process of claim 1 , wherein each of the consolidated blocks includes about 30 to about 70 at % molybdenum and the balance titanium, exclusive of impurities.

11. The process of claim 1 , wherein an oxygen weight of the sputtering target is between about 1000 ppm and 3500 ppm.

12. The process of claim 1 , wherein the target has a sputtering surface of at least about 1.5 m 2 , and the two or more consolidated blocks are joined end-to-end.

13. The process of claim 12 , wherein the sputtering target includes about 30 to about 70 at % molybdenum and the balance titanium, exclusive of impurities.

14. The process of claim 1 , wherein the substrate comprises at least one of glass or silicon.

15. The process of claim 1 , further comprising forming a metal conductor in contact with the film.

16. The process of claim 15 , wherein the metal conductor comprises copper.

17. The process of claim 1 , further comprising forming an electronic device incorporating at least a portion of the film.

18. The process of claim 17 , wherein the electronic device comprises a television, a video display, a smartphone, a tablet computer, a personal digital assistant, a navigation device, a sensor, a photovoltaic device, or a portable entertainment device.

19. A process comprising:

sputtering a sputtering target to form a film over a substrate, wherein the sputtering target comprises:

a) at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying element; and

b) a joint between the at least two consolidated blocks, which joins the blocks together to define a target body,

wherein (i) within the at least two consolidated blocks there is (a) a molybdenum phase, (b) a phase of the at least one additional alloying element, and (c) a third phase comprising an alloy of molybdenum at the at least one additional alloying element, (ii) the third phase is present in an amount greater than 30 volume percent, and (iii) the joint comprises at least one of a scarf joint, a lap joint, or a dovetail joint.

20. The process of claim 2 , wherein the sputtering target at the joint exhibits a transverse rupture strength per ASTM B528-10, of at least 800 MPa.

21. The process of claim 1 , wherein the joint comprises at least one of a scarf joint, a lap joint, or a dovetail joint.

22. The process of claim 19 , wherein the joint comprises a scarf joint.

23. The process of claim 19 , wherein the joint comprises a lap joint.

24. The process of claim 19 , wherein the joint comprises a dovetail joint.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2026
From: H.C. STARCK SOLUTIONS EUCLID, LLC
To: ELMET TECHNOLOGIES, LLC
Reel/Frame 073679/0340 →
SECURITY INTEREST Recorded Nov 6, 2023
From: H.C. STARCK SOLUTIONS COLDWATER, LLC; H.C. STARCK SOLUTIONS EUCLID, LLC
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 065472/0843 →
CHANGE OF NAME Recorded Nov 1, 2023
From: EUCLID FACILITY HOLDINGS, LLC
To: H.C. STARCK SOLUTIONS EUCLID, LLC
Reel/Frame 065415/0762 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 31, 2023
From: H.C. STARCK INC.
To: EUCLID FACILITY HOLDINGS, LLC
Reel/Frame 065402/0594 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2019
From: ROZAK, GARY ALAN; GAYDOS, MARK E.
To: H.C. STARCK INC.
Reel/Frame 048087/0056 →
Cited By (1)
US 12,459,051