Tapered VA structure for increased alignment tolerance and reduced sputter redeposition in MTJ devices
A bottom electrode structure for MRAM or MTJ-based memory cells comprises a taper so that the bottom CD is smaller than the top CD. A process of making a bottom electrode contact structure comprises etching a dielectric layer using a plasma chemistry with an increased degree of polymerization. We obtain a product made by this process.
1. A process for forming a device comprising:
forming a plurality of metal posts in a substrate;
depositing a dielectric layer over the metal posts and the substrate;
etching the dielectric layer using a fluorocarbon plasma chemistry with a degree of polymerization selected to form a tapered opening by deposition reactions occurring during the etching; and
depositing a conductive metal into the tapered opening to form a tapered VA bottom electrode contact structure comprising a bottom critical dimension (CD) is smaller than a top CD;
forming a plurality of layers forming a magnet junction (MTJ) stack over the device including the conductive metal and the dielectric layer;
forming a plurality of hardmask posts over the MTJ stack; and
patterning the MTJ stack using the plurality of hardmask posts to form MTJ devices by a physical sputtering process, whereby sidewalls of the MTJ devices have minimized or substantially no coating of the conductive metal due to the physical sputtering process.
2. The process of claim 1 wherein the fluorocarbon plasma chemistry comprises a fluorocarbon or a mixture of fluorocarbons.
3. The process of claim 1 wherein the fluorocarbon plasma chemistry comprises a mixture comprising CF4 and CHF 3 fluorocarbons.
4. The process of claim 1 wherein said conductive metal comprises an electrically conductive metal, metal mixture, metal alloy, or metal compound.
5. The process of claim 1 wherein the plurality of hardmask posts are misaligned with the tapered VA bottom electrode contact structure, wherein the tapered VA bottom electrode contact structure minimizes or substantially prevents the coating of the conductive metal on the sidewalls of the MTJ devices due to the physical sputtering process.
6. The process of claim 1 wherein the fluorocarbon plasma chemistry comprises a CxHyFz fluorocarbon wherein x has a value of from 1 to about 2, y has a value of from 1 to about 3, and z has a value of from 1 to about 4.
7. The process of claim 6 wherein the fluorocarbon plasma chemistry comprises a mixture comprising CF4 and CHF 3 fluorocarbons in a ratio of about 1:4, plus or minus about 10 to about 20 percent.
8. A process for forming a device comprising:
forming a plurality of metal posts in a substrate;
depositing a dielectric layer over the metal posts and the substrate;
etching the dielectric layer using a plasma chemistry with a degree of polymerization selected to obtain a tapered opening in the dielectric layer by deposition reactions occurring during the etching, where a bottom critical dimension (CD) of the tapered opening is smaller than a top CD of the tapered opening; and
depositing an electrically conductive metal into the tapered opening to form a tapered VA bottom electrode contact structure;
forming a plurality of layers forming a magnet junction (MTJ) stack over the device including the electrically conductive metal and the dielectric layer;
forming a plurality of hardmask posts over the MTJ stack; and
patterning the MTJ stack using the plurality of hardmask posts as a mask to form MTJ devices by a physical sputtering process, whereby sidewalls of the MTJ devices have minimized or substantially no coating of the conductive metal due to the physical sputtering process.
9. The process of claim 8 wherein the plasma chemistry comprises a fluorocarbon or a mixture of fluorocarbons.
10. The process of claim 8 wherein the plasma chemistry comprises a CxHyFz fluorocarbon wherein x has a value of from 1 to about 2, y has a value of from 1 to about 3, and z has a value of from 1 to about 4.
11. The process of claim 8 wherein the plasma chemistry comprises a mixture comprising CF4 and CHF 3 fluorocarbons.
12. The process of claim 8 wherein the plasma chemistry comprises a mixture comprising CF4 and CHF 3 fluorocarbons in a ratio of about 1:4, plus or minus about 10 to about 20 percent.
13. The process of claim 8 wherein said electrically conductive metal comprises an electrically conductive metal, metal mixture, metal alloy, or metal compound.
14. The process of claim 8 wherein the plurality of hardmask posts are misaligned with the tapered VA bottom electrode contact structure, wherein the tapered VA bottom electrode contact structure minimizes or substantially prevents the coating of the conductive metal on the sidewalls of the MTJ devices due to the physical sputtering process.