Electroluminescent device having light transmitting region of non-through-hole structure

1. An electroluminescent device, comprising:

a lower substrate;

a lower structure on the lower substrate; and

an encapsulation structure disposed on the lower structure,

wherein the lower structure includes:

a display region;

a light transmitting region having a non-through-hole structure including at least a portion surrounded by the display region; and

a buffer region having at least a portion extending along an outline of the light transmitting region between the display region and the light transmitting region to separate the display region and the light transmitting region from each other, and

wherein the lower structure further includes a light blocking structure extending along the outline of the light transmitting region in the at least the portion of the buffer region,

wherein the display region comprises an electroluminescent unit including a reflecting electrode, an intermediate multilayer on the reflecting electrode, and a semi-transparent electrode on the intermediate multilayer,

wherein the lower structure has an inorganic surface portion substantially surrounding the display region and the light transmitting region in a plan view, the encapsulation structure has an inorganic lower surface, and the inorganic lower surface of the encapsulation structure is in contact with the inorganic surface portion of the lower structure to form an inorganic-inorganic encapsulation contact region substantially surrounding the display region and the light transmitting region in a plan view, and

wherein the electroluminescent device does not have a hole formed through both the lower substrate and the lower structure, a portion of the encapsulation structure, the portion corresponding to the light transmitting region is not removed, and the portion of the encapsulation structure is substantially surrounded by the inorganic-inorganic encapsulation contact region in a plan view.

2. An electroluminescent device, comprising:

a lower structure; and

an encapsulation structure disposed on the lower structure,

wherein the lower structure includes:

a display region;

a light transmitting region having a non-through-hole structure including at least a portion surrounded by the display region; and

a buffer region having at least a portion extending along an outline of the light transmitting region between the display region and the light transmitting region to separate the display region and the light transmitting region from each other, and

wherein the lower structure further includes a light blocking structure extending along the outline of the light transmitting region in the at least the portion of the buffer region,

wherein the lower structure further includes:

an inorganic multilayer;

a planarization structure being substantially transparent and being disposed on the inorganic multilayer;

a reflecting electrode being an individual layer disposed on the planarization structure;

a pixel definition layer being substantially transparent and being disposed on the planarization structure to cover a side portion of the reflecting electrode;

an intermediate multilayer disposed on the reflecting electrode; and

a semi-transparent electrode being a common layer disposed on the intermediate multilayer,

wherein the pixel definition layer has a sidewall extending along the outline of the light transmitting region in the at least the portion of the buffer region, and

wherein the light blocking structure includes a semi-transparent member extending on the pixel definition layer to cover the sidewall of the pixel definition layer and being a single piece with the semi-transparent electrode.

3. An electroluminescent device, comprising:

a lower structure; and

an encapsulation structure disposed on the lower structure,

wherein the lower structure includes:

a display region;

a light transmitting region having a non-through-hole structure including at least a portion surrounded by the display region; and

a buffer region having at least a portion extending along an outline of the light transmitting region between the display region and the light transmitting region to separate the display region and the light transmitting region from each other, and

wherein the lower structure further includes a light blocking structure extending along the outline of the light transmitting region in the at least the portion of the buffer region,

wherein the lower structure further includes:

an inorganic multilayer;

a planarization structure being substantially transparent and being disposed on the inorganic multilayer;

a reflecting electrode being an individual layer disposed on the planarization structure;

a pixel definition layer being substantially transparent and being disposed on the planarization structure to cover a side portion of the reflecting electrode;

an intermediate multilayer disposed on the reflecting electrode; and

a semi-transparent electrode being a common layer and being disposed on the intermediate multilayer,

wherein the planarization structure and the pixel definition layer have a sidewall extending along the outline of the light transmitting region in the at least the portion of the buffer region, and

wherein the light blocking structure has a semi-transparent member extending on the planarization structure and the pixel definition layer to cover the sidewall and being a single piece with the semi-transparent electrode.

4. The electroluminescent device of claim 3 ,

wherein the light blocking structure further includes a reflection structure disposed on the inorganic multilayer, and

wherein the sidewall is in contact with an upper surface of the reflection structure so that the semi-transparent member is in contact with the upper surface of the reflection structure.

5. The electroluminescent device of claim 4 ,

wherein the intermediate multilayer has at least one intermediate common layer, and

wherein a side portion of the semi-transparent member is substantially closer to the light transmitting region than a side portion of the intermediate common layer.

6. An electroluminescent device, comprising:

a lower structure; and

an encapsulation structure disposed on the lower structure,

wherein the lower structure includes:

a display region;

a light transmitting region having a non-through-hole structure including at least a portion surrounded by the display region; and

a buffer region having at least a portion extending along an outline of the light transmitting region between the display region and the light transmitting region to separate the display region and the light transmitting region from each other, and

wherein the lower structure further includes a light blocking structure extending along the outline of the light transmitting region in the at least the portion of the buffer region,

wherein the lower structure further includes:

an inorganic multilayer; and

a planarization structure being substantially transparent and being disposed on the inorganic multilayer, and

wherein the light blocking structure includes a first reflection structure disposed on the planarization structure.

7. The electroluminescent device of claim 6 ,

wherein the lower structure further includes:

a reflecting electrode being an individual layer disposed on the planarization structure;

a pixel definition layer being substantially transparent and being disposed on the planarization structure to cover a side portion of the reflecting electrode;

an intermediate multilayer disposed on the reflecting electrode; and

a semi-transparent electrode being a common layer disposed on the intermediate multilayer, and

wherein the first reflection structure is disposed on substantially the same layer as the reflecting electrode.

8. The electroluminescent device of claim 7 ,

wherein the planarization structure has a first sidewall extending along the outline of the light transmitting region in the at least the portion of the buffer region.

9. The electroluminescent device of claim 8 ,

wherein the first reflection structure extends on the planarization structure to cover the first sidewall.

10. The electroluminescent device of claim 9 ,

wherein the light blocking structure further includes a second reflection structure disposed on the inorganic multilayer, and

wherein the first sidewall is in contact with an upper surface of the second reflection structure so that the first reflection structure is in contact with the upper surface of the second reflection structure.

11. The electroluminescent device of claim 9 ,

wherein the pixel definition layer has a second sidewall extending along the outline of the light transmitting region in the at least the portion of the buffer region,

wherein the light blocking structure further includes a semi-transparent member extending on the pixel definition layer to cover the second sidewall and being a single piece with the semi-transparent electrode, and

wherein the second sidewall is in contact with an upper surface of the first reflection structure so that the semi-transparent member is in contact with the upper surface of the first reflection structure.

12. The electroluminescent device of claim 11 ,

wherein the intermediate multilayer includes at least one intermediate common layer, and

wherein a side portion of the semi-transparent member is substantially closer to the light transmitting region than a side portion of the intermediate common layer.

13. The electroluminescent device of claim 6 ,

wherein the first reflection structure has at least one hole.

14. An electroluminescent device, comprising:

a lower structure; and

an encapsulation structure disposed on the lower structure,

wherein the lower structure includes:

a display region;

a light transmitting region having a non-through-hole structure including at least a portion surrounded by the display region; and

a buffer region having at least a portion extending along an outline of the light transmitting region between the display region and the light transmitting region to separate the display region and the light transmitting region from each other, and

wherein the lower structure further includes a light blocking structure extending along the outline of the light transmitting region in the at least the portion of the buffer region,

wherein the lower structure includes:

an inorganic multilayer structure;

a planarization structure being substantially transparent and being disposed on the inorganic multilayer structure;

a reflecting electrode being an individual layer disposed on the planarization structure;

a pixel definition layer being substantially transparent and being disposed on the planarization structure to cover a side portion of the reflecting electrode;

an intermediate multilayer disposed on the reflecting electrode; and

a semi-transparent electrode being a common layer disposed on the intermediate multilayer, and

wherein the inorganic multilayer structure includes at least one recess corresponding to the light transmitting region and filled with the planarization structure.

15. The electroluminescent device of claim 1 ,

wherein the light blocking structure includes a conductive material; and

wherein the light blocking structure does not transmit an electrical signal.