Diamond cutting elements for drill bits seeded with HCP crystalline material
A polycrystalline diamond compact (PDC), which is attached or bonded to a substrate to form a cutter for a drill bit, is comprised of sintered polycrystalline diamond interspersed with a seed material which has a hexagonal close packed (HCP) crystalline structure. A region of the sintered polycrystalline diamond structure, near one or more of its working surfaces, which has been seeded with an HCP seed material prior to sintering, is leached to remove catalyst. Selectively seeding portions or regions of a sintered polycrystalline diamond structure permits differing leach rates to form leached regions with differing distances or depths and geometries.
1. A method of fabricating a sintered polycrystalline diamond structure for an earth boring drill bit, comprising:
mixing grains of hexagonal close packed (HCP) seed material with grains of diamond grit mix to form a mixture;
forming a compact for sintering, the compact containing diamond grit mix throughout, at least a portion of the compact containing the mixture of HCP seed material and diamond grit mix;
sintering the compact in the presence of a catalyst to thereby form a diamond structure comprising an integral mass of sintered polycrystalline diamond (PCD) exhibiting diamond-to-diamond bonding, the catalyst occupying voids therein, the compact being at least partially interspersed with the HCP seed material, and
leaching the catalyst from the diamond structure to a predetermined depth using an acid;
wherein the predetermined depth is greater than 500 microns; and
wherein the sizes of the grains of polycrystalline diamond in the mixture are less than 30 microns.
2. The method of claim 1 , wherein the catalyst is comprised of metal.
3. The method of claim 1 , wherein the HCP seed material possesses a wurtzite crystalline structure.
4. The method of claim 1 , wherein the HCP seed material is chosen from the group consisting essentially of wurtzite boron nitride, wurtzite silicon carbide, and Lonsdaleite.
5. The method of claim 1 , wherein the HCP seed material is comprised of wurtzite boron nitride.
6. The method of claim 1 wherein the sizes of the grains of HCP seed material are less than 40 microns.
7. The method of claim 1 wherein the sizes of the grains of polycrystalline diamond in the mixture are less than 100 nanometers in at least one dimension.
8. The method of claim 1 , wherein the HCP seed material comprises less than 5% by volume of the mixture.
9. The method of claim 8 , wherein the HCP seed material comprises less than 1% by volume of the mixture.
10. The method of claim 8 , wherein the amount of HCP seed material in the mixture comprises an amount between 0.05% and 0.5% of the mixture by volume.
11. The method of claim 1 , wherein the compact has a plurality of surfaces, at least one of which is a working surface; and wherein the compact has at least one discrete region that is adjacent the working surface that contains the mixture, and at least one other discrete region not containing the mixture.
12. The method of claim 1 , wherein the mixture is located in at least one discrete region within the compact, and wherein the compact has at least one other discrete region with PCD devoid of HCP seed material.
13. The method of claim 1 , wherein the mixture has a first proportion of HCP seed material to PCD, and wherein the method further comprises mixing grains of diamond grit mix with grains of HCP seed material in a second proportion different from the first proportion, and wherein forming the compact comprises at least one discrete region of the mixture with the first proportion of HCP seed material and PCD and at least one other discrete region of the mixture of the HCP seed material and PCD in the second proportion.
14. The method of claim 1 , wherein the compact is formed with a plurality of surfaces, at least one of which is a working surface and at least one of which is a bottom surface; and wherein the compact is formed with at least two layers of PCD, a first layer of PCD having grains of a first size or size range adjacent the working surface, and a second layer nearer the bottom surface having grains of PCD larger than the first size or size range.
15. The method of any of claim 1 , wherein, the compact has a plurality of surfaces, at least one of which is a working surface; the compact has at least one discrete region that is adjacent the working surface that contains the mixture, and at least one other discrete region not containing the mixture; and
the method further comprises leaching catalyst from the diamond structure from the at least one discrete region containing the mixture.
16. The method of claim 1 , wherein,
the compact has a plurality of surfaces, at least one of which is a working surface;
the compact has at least one discrete region that is adjacent the working surface that contains the mixture, and a region not containing the mixture; and
the method further comprises leaching from the diamond structure metal catalyst in at least a portion of both the at least one discrete region containing the mixture and the region not containing the mixture.
17. The method of claim 1 , wherein the predetermined depth is greater than 1200 microns.