Memory device
A memory device includes a memory cell array configured to store data, a control circuit configured to control the memory cell array in response to a command; and a receiver configured to be placed in an active state based on a first signal, a second signal, or an operation result of an address and the command, and be enabled to receive a command or data.
1. A memory device, comprising:
a memory cell array configured to store data,
a control circuit configured to control the memory cell array in response to a command; and
a receiver configured to:
in a first operation mode, be placed in an active state based on an address or a first operation result, and be enabled to receive a command or data, the first operation result being a result of a command and a second operation result, and the second operation result being a result of a first signal and a second signal, and
in a second operation mode, be placed in the active state based on the first signal, the second signal, or a third operation result, and be enabled to receive a command or data, the third operation result being a result of the address and the command.
2. The memory device according to claim 1 , wherein the receiver is placed in the active state when the first signal and the second signal are asserted.
3. The memory device according to claim 1 , further comprising:
a command register configured to store a command; and
an address register configured to store an address,
wherein the first signal comprises a signal for causing the command register to store a command, and
wherein the second signal comprises a signal for causing the address register to store an address.
4. The memory device according to claim 1 , wherein the receiver is further configured to be placed in a standby state and be disabled from receiving a command or data when the address and the first operation result are both at a first level.
5. The memory device according to claim 1 , wherein the receiver is further configured to be placed in the active state when one of the first signal and the second signal is asserted.
6. The memory device according to claim 1 , further comprising:
a command register configured to store a command; and
an address register configured to store an address,
wherein the first signal comprises a signal for causing the command register to store a command, and
wherein the second signal comprises a signal for causing the address register to store an address.
7. The memory device according to claim 1 , wherein the receiver is further configured to be placed in a standby state and be disabled from receiving a command or data when one of the first signal, the second signal, and the third operation result is at a first level.
8. A memory device, comprising:
a memory cell array configured to store data;
a control circuit configured to control the memory cell array in response to a command; and
a receiver configured to:
in a first operation mode, be placed in an active state based on an address or a first operation result, and be enabled to receive a command or data, the first operation result being a result of the command and a second operation result, and the second operation result being a result of a first signal, a second signal, and a third signal, and
in a second operation mode, be placed in the active state based on one of the first signal, the second signal, and a third operation result, and be enabled to receive a command or data, the third operation result being a result of the address and the command.
9. The memory device according to claim 8 , wherein the receiver is further configured to be placed in an active state when the first signal, the second signal, and the third signal are asserted, and be enabled to receive a command or data.
10. The memory device according to claim 8 , further comprising:
a command register configured to store a command; and
an address register configured to store an address,
wherein:
the first signal comprises a signal for causing the command register to store a command,
the second signal comprises a signal for causing the address register to store an address, and
the third signal comprises a signal for causing the memory device to take a command or data therein.
11. The memory device according to claim 8 , wherein the receiver is further configured to be placed in a standby state and be disabled from receiving a command or data when the address and first operation result are both at a first level.