IP Library Granted Patent US 10,900,926
Granted Patent B2
US 10,900,926 · App. 16/250,330 · Granted Jan 26, 2021

Gas sensor, gas detection apparatus, fuel cell powered vehicle, and manufacturing method of gas sensor

Inventors: Koji Katayama (Nara, JP); Zhiqiang Wei (Osaka, JP); Shunsaku Muraoka (Osaka, JP); Kazunari Homma (Kyoto, JP)
Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
G01N27/4075B60K15/035B60K15/063B60L50/70G01N27/125H01M8/00H01M8/04B60Y2400/102
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Quick Facts
Patent No.
US 10,900,926
App. No.
16/250,330
Granted
Jan 26, 2021
Kind
B2
Abstract

A gas sensor includes: a first electrode; a metal oxide layer that is on the first electrode and has a resistance value that changes when the metal oxide layer contacts hydrogen atoms; a second electrode on the metal oxide layer; and an insulating film that covers at least a part of side surfaces of the first electrode, the metal oxide layer, and the second electrode. In the metal oxide layer, a part of a first interface between the first electrode and the metal oxide layer is not covered by the insulating film and is exposed to a gas.

Claims (52)

1. A gas sensor that detects molecules of a gas, the gas sensor comprising:

a first electrode;

a metal oxide layer on the first electrode, the metal oxide layer having a resistance value that changes when the metal oxide layer contacts hydrogen atoms;

a second electrode on the metal oxide layer; and

an insulating film that covers at least a part of side surfaces of the first electrode, the metal oxide layer, and the second electrode,

wherein, in the metal oxide layer, a part of at least one of a first interface between the first electrode and the metal oxide layer, and a second interface between the second electrode and the metal oxide layer is not covered by the insulating film and is exposed to the gas.

2. The gas sensor according to claim 1 ,

wherein the metal oxide layer includes an oxygen-deficient metal oxide.

3. The gas sensor according to claim 1 ,

wherein at least a part of the metal oxide layer includes an oxygen-deficient area in which oxygen atoms are deficient.

4. The gas sensor according to claim 3 ,

wherein the oxygen-deficient area is an amorphized area including a same material as at least one of the first electrode and the second electrode.

5. The gas sensor according to claim 1 ,

wherein at least a part of the metal oxide layer includes a local area.

6. The gas sensor according to claim 5 ,

wherein at least a part of the local area contacts at least one of the first electrode and the second electrode.

7. The gas sensor according to claim 1 ,

wherein at least one of the first electrode and the second electrode includes a protrusion that projects toward the metal oxide layer in an interface between the metal oxide layer and the at least one of the first electrode and the second electrode.

8. The gas sensor according to claim 7 ,

wherein the metal oxide layer includes an electric field concentration region in which an electric field is concentrated in a vicinity of a location at which the protrusion is arranged.

9. The gas sensor according to claim 1 ,

wherein at least one of the first electrode and the second electrode includes a material having a catalytic action that dissociates the hydrogen atoms from the gas molecules.

10. The gas sensor according to claim 1 ,

wherein at least one of the first electrode and the second electrode includes at least one material selected from the group consisting of platinum, palladium, and an alloy of platinum and palladium.

11. The gas sensor according to claim 1 ,

wherein at least a part of a side surface of the second electrode among the side surfaces of the first electrode, the second electrode, and the metal oxide layer is not covered by the insulating film and is exposed.

12. The gas sensor according to claim 1 ,

wherein the metal oxide layer contains at least one material selected from the group consisting of a transition metal capable of being in a plurality of oxidation states, tin, and aluminum.

13. The gas sensor according to claim 12 ,

wherein the transition metal is at least one of tantalum (Ta), hafnium (Hf), titanium (Ti), zirconium (Zr), niobium (Nb), tungsten (W), nickel (Ni), iron (Fe), chromium (Cr), cobalt (Co), manganese (Mn), vanadium (V), cerium (Ce), and copper (Cu).

14. The gas sensor according to claim 1 ,

wherein the metal oxide layer reversibly shifts between a high resistance state and a low resistance state based on a voltage applied between the first electrode and the second electrode.

15. A gas detection apparatus, comprising:

the gas sensor according to claim 1 ; and

a current measurement circuit that measures a current flowing into the metal oxide layer when a voltage is applied between the first electrode and the second electrode.

16. A gas detection apparatus, comprising:

the gas sensor according to claim 1 ; and

a power supply circuit that applies a voltage between the first electrode and the second electrode.

17. A fuel cell powered vehicle, comprising:

a cabin;

a gas tank chamber in which a tank for hydrogen gas is arranged;

a fuel cell chamber in which a fuel cell is arranged; and

the gas sensor according to claim 1 ,

wherein the gas sensor is arranged in at least one of the gas tank chamber and the fuel cell chamber.

18. A manufacturing method of a gas sensor that detects molecules of a gas, the manufacturing method comprising:

forming a first electrode;

forming, on the first electrode, a metal oxide layer having a resistance value that changes when the metal oxide layer contacts hydrogen atoms;

forming a second electrode on the metal oxide layer;

forming an insulating film that covers at least a part of side surfaces of the first electrode, the metal oxide layer, and the second electrode; and

forming, in at least a part of the insulating film and the second electrode, an opening that is recessed in a laminating direction of the insulating film, the second electrode, the metal oxide layer, and the first electrode, to expose at least a part of a first interface between the second electrode and the metal oxide layer.

19. The manufacturing method of the gas sensor according to claim 18 ,

wherein, in the forming of the opening, at least a part of the insulating film, the second electrode, and the metal oxide layer is opened to be recessed in the laminating direction of the insulating film, the second electrode, the metal oxide layer, and the first electrode, to expose a part of a second interface between the first electrode and the metal oxide layer.

Assignments (3)
CHANGE OF NAME Recorded May 14, 2021
From: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
To: NUVOTON TECHNOLOGY CORPORATION JAPAN
Reel/Frame 056245/0395 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0870 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 27, 2019
From: KATAYAMA, KOJI; WEI, ZHIQIANG; MURAOKA, SHUNSAKU; HOMMA, KAZUNARI
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 049601/0876 →