Gallium nitride containing laser device configured on a patterned substrate

1. A gallium and nitrogen containing laser diode device, the device comprising:

a gallium and nitrogen containing substrate material comprising a surface region;

a plurality of recessed regions within the substrate material, each pair of adjacent recessed regions forming a mesa region therebetween, the mesa region having a width of at least 0.5 microns, the pair of adjacent recessed regions being configured to block a plurality of defects from migrating into the mesa region;

an epitaxial gallium and nitrogen containing material overlying the substrate material and the mesa region, the epitaxial gallium and nitrogen containing material overlying the mesa region being substantially free from defects migrating from regions outside the pair of adjacent recessed regions to the mesa region;

an active region overlying the epitaxial gallium and nitrogen containing material, wherein the epitaxial gallium and nitrogen containing material and the active region overlie sidewalls and bottoms of the plurality of recesses regions;

a p-type region overlying the active region, wherein a top surface of a portion of the epitaxial gallium and nitrogen containing material that extends over the bottoms of at least some of the plurality of recessed regions is below a top surface of the surface region so that the epitaxial gallium and nitrogen containing material does not completely fill at least some of the plurality of recessed regions, and a top surface of a portion of the p-type region that extends over the bottoms of the plurality of recessed regions is substantially planar and coalesces to fill depressions above the plurality of recessed regions;

a laser stripe region overlying at least a portion of the mesa region, the laser stripe region having a first end and a second end; and

a first facet provided on the first end of the laser stripe region and a second facet provided on the second end of the laser stripe region.

2. The device of claim 1 , further comprising a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

3. The device of claim 1 , wherein the surface region has an orientation selected from one of {30-3-1}, {30-31}, {20-2-1}, {30-3-2}, {20-21}, {30-3-1}, {30-32}, or an offcut from any one of these planes within +/−5 degrees toward a c-plane.

4. The device of claim 1 , wherein the active region comprises InGaN quantum wells configured to emit in the blue range having a wavelength of between 430 nm to 480 nm or in the green range having a wavelength of between 500 nm to 540 nm.

5. The device of claim 1 , wherein the p-type region is a p-type gallium and nitrogen containing cladding region, and the device comprises:

a conductive oxide layer comprising an indium tin oxide overlying the p-type gallium and nitrogen containing cladding region; and

a metallization layer selected from at least one of Au, Ni, Pd, Pt, or Ti overlying the conductive oxide layer.

6. The device of claim 1 , wherein the p-type region is a p-type gallium and nitrogen containing cladding region, and the device comprises:

a highly reflective metal layer overlying the p-type gallium and nitrogen containing cladding region; and

a metallization layer selected from at least one of Au, Ni, Pd, Pt, or Ti overlying the highly reflective metal layer.

7. The device of claim 1 , wherein,

the active region comprises one or more light emitting layers;

each of the one or more lighting emitting layers being configured between a pair of barrier regions;

each of the one or more lighting emitting layers having a thickness ranging from about 2 nm to about 8 nm; and

each of the barrier regions having a thickness ranging from 2 nm to 4 nm or 4 nm to 8 nm or 8 nm to 20 nm.

8. The device of claim 1 , wherein the epitaxial gallium and nitrogen material comprises a defect density of less than 10 5 cm −2 ; wherein each recessed region comprises a width ranging from 5 microns to 200 microns; and wherein the gallium and nitrogen containing substrate material is GaN.

9. The device of claim 1 , wherein the first and second facets are cleaved facets.

10. The device of claim 1 , wherein the first and second facets are etched facets.

11. A structure for a gallium and nitrogen containing laser diode device, the structure comprising:

a gallium and nitrogen containing substrate material comprising a surface region;

a plurality of migration blocking regions (MBRs) within the substrate material, each of the MBRs including a recessed region, and each pair of adjacent MBRs forming a mesa region therebetween, the mesa region having a width of at least 0.5 microns, the pair of adjacent MBRs being configured to block a plurality of defects from migrating into the mesa region;

an epitaxial gallium and nitrogen containing material overlying the substrate material, the epitaxial gallium and nitrogen containing material overlying the mesa region being substantially free from defects migrating from regions outside the pair of adjacent MBRs to the mesa region;

an active region overlying the epitaxial gallium and nitrogen containing material and the mesa region, wherein the epitaxial gallium and nitrogen containing material and the active region overlie sidewalls and bottoms of the plurality of MBRs; and

a p-type region overlying the active region, wherein a top surface of a portion of the epitaxial gallium and nitrogen containing material that extends over the bottoms of at least some of the plurality of MBRs is below a top surface of the surface region so that the epitaxial gallium and nitrogen containing material does not completely fill at least some of the plurality of MBRs, and a top surface of a portion of the p-type region that extends over the bottoms of the plurality of MBRs is substantially planar and coalesces to fill depressions above the plurality of MBRs.

12. The structure of claim 11 , wherein the plurality of MBRs are provided by a trench, a mesa, or another structure or patterned mask.

13. The structure of claim 11 , wherein the plurality of MBRs are provided by an etched mesa using a patterned mask.

14. The structure of claim 11 , wherein the plurality of MBRs are provided by a deposited and patterned material comprising at least one of silicon dioxide or silicon nitride.

15. The structure of claim 11 , further comprising a laser stripe region overlying the p-type region.

16. The structure of claim 11 , further comprising a laser stripe region overlying the p-type region, wherein the laser stripe region is characterized by a cavity orientation substantially parallel to a projection of a c-direction; the laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region and a second facet provided on the second end of the laser stripe region.

17. The structure of claim 16 , wherein the first facet and the second facet are etched facets; or where in the first facet and the second facet are cleaved facets.

18. The structure of claim 11 , wherein the p-type region is a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species; wherein the surface region has an orientation selected from one of {30-3-1}, {30-31}, {20-2-1}, {20-21}, {30-3-1}, {30-32}, or an offcut from any one of these planes within +/−5 degrees toward a c-plane.

19. A method for fabricating a gallium and nitrogen containing laser diode device, the method comprising:

providing a gallium and nitrogen containing substrate material comprising a surface region;

forming a plurality of migration blocking regions (MBRs) within the substrate material, each of the MBRs including a recessed region, and each pair of adjacent MBRs forming a mesa region therebetween, the mesa region having a width of at least 0.5 microns, the pair of adjacent MBRs being configured to block a plurality of defects from migrating into the mesa region;

forming an epitaxial gallium and nitrogen containing material overlying the substrate material, the epitaxial gallium and nitrogen containing material overlying the mesa region being substantially free from defects migrating from regions outside the pair of adjacent MBRs to the mesa region;

forming an active region overlying the epitaxial gallium and nitrogen containing material and the mesa region, wherein the epitaxial gallium and nitrogen containing material and the active region overlie sidewalls and bottoms of the plurality of MBRs; and

forming a p-type region overlying the active region, wherein a top surface of a portion of the epitaxial gallium and nitrogen containing material that extends over the bottoms of at least some of the plurality of MBRs is below a top surface of the surface region so that the epitaxial gallium and nitrogen containing material does not completely fill at least some of the plurality of MBRs, and a top surface of a portion of the p-type region that extends over the bottoms of the plurality of MBRs is substantially planar, the p-type region coalescing to fill depressions above the plurality of MBRs.