IP Library Granted Patent US 10,974,965
Granted Patent B2
US 10,974,965 · App. 16/253,639 · Granted Apr 13, 2021

Silicon-containing structure, method of preparing the same, carbon composite using the same, and electrode, lithium battery, and device each including the same

Inventors: Jongseok Moon (Suwon-si, KR); Mijong Kim (Suwon-si, KR); Sewon Kim (Suwon-si, KR); Kyueun Shim (Suwon-si, KR); Sungsoo Han (Hwaseong-si, KR); Inhyuk Son (Yongin-si, KR); Jumyeung Lee (Suwon-si, KR); Minwoo Lim (Hwaseong-si, KR)
Assignees: SAMSUNG ELECTRONICS CO., LTD.; SAMSUNG SDI CO., LTD.
C01B33/023C01B32/186C01B33/00H01L35/14H01M4/0416H01M4/0428H01M4/1395H01M4/366H01M4/386H01M4/48H01M4/583H01M4/587H01M4/625B82Y40/00C01B32/182C01B32/20C01B33/113C01P2004/03C01P2004/04H01M4/134H01M10/0525
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Quick Facts
Patent No.
US 10,974,965
App. No.
16/253,639
Granted
Apr 13, 2021
Kind
B2
Abstract

A silicon-containing structure including: a silicon composite including a porous silicon secondary particle and a first carbon flake on a surface of the porous silicon secondary particle; a carbonaceous coating layer on the porous silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer, wherein the porous silicon secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a second carbon flake on a surface of the silicon suboxide.

Claims (88)

1. A silicon-containing structure comprising:

a silicon composite comprising

a porous silicon secondary particle, and

a first carbon flake on a surface of the porous silicon secondary particle;

a carbonaceous coating layer on the silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and

the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer,

wherein the porous silicon secondary particle comprises an aggregate of silicon composite primary particles, each comprising

silicon,

a silicon suboxide on a surface of the silicon, and

a second carbon flake on a surface of the silicon suboxide, and

wherein pores in the porous silicon secondary particle are filled with the second amorphous carbon.

2. The silicon-containing structure of claim 1 , wherein the silicon suboxide is a film, a matrix, or a combination thereof, and

the first carbon flake and the second carbon flake are each independently a film, a particle, a matrix, or a combination thereof.

3. The silicon-containing structure of claim 1 , wherein the second amorphous carbon is disposed in a pore of the porous silicon secondary particle.

4. The silicon-containing structure of claim 1 , wherein the silicon composite has a porosity of greater than 0 to about 60 percent or less.

5. The silicon-containing structure of claim 1 , wherein the first carbon flake and the second carbon flake are a same carbon flake.

6. The silicon-containing structure of claim 1 , wherein a ratio of a total weight of the first carbon flake and the second carbon flake to a total weight of the first amorphous carbon and the second amorphous carbon is about 1:99 to 99:1.

7. The silicon-containing structure of claim 1 , wherein a ratio of a total weight of the first carbon flake and the second carbon flake to a total weight of the first amorphous carbon and the second amorphous carbon is about 1:1 to about 1:10.

8. The silicon-containing structure of claim 1 , wherein the silicon-containing structure has a non-spherical shape.

9. The silicon-containing structure of claim 1 , wherein the first carbon flake and the second carbon flake each independently comprise graphene, graphite, carbon fiber, graphitic carbon, graphene oxide, or a combination thereof.

10. The silicon-containing structure of claim 1 , wherein the first amorphous carbon and the second amorphous carbon each independently comprise pitch carbon, soft carbon, hard carbon, a meso-phase pitch carbide, a sintered coke, carbon fiber, or a combination thereof.

11. The silicon-containing structure of claim 1 , wherein the carbonaceous coating layer further comprises a crystalline carbon.

12. The silicon-containing structure of claim 11 , wherein the crystalline carbon comprises natural graphite, artificial graphite, graphene, fullerene, carbon nanotubes, or a combination thereof.

13. The silicon-containing structure of claim 1 , wherein the carbonaceous coating layer comprises a first carbonaceous coating layer comprising amorphous carbon, and a second carbonaceous coating layer comprising crystalline carbon.

14. The silicon-containing structure of claim 1 , wherein the carbonaceous coating layer is a non-porous continuous coating layer having a thickness of about 1 nanometer to about 5,000 nanometers.

15. The silicon-containing structure of claim 1 , wherein a total amount of the first carbon flake and the second carbon flake in the silicon-containing structure is about 0.1 parts by weight to about 2,000 parts by weight, based on 100 parts by weight of the silicon in the silicon composite structure.

16. The silicon-containing structure of claim 1 , wherein the first carbon flake of the porous silicon secondary particle is a first graphene flake, the first graphene flake comprises about 1 to about 30 graphene layers, and

a total thickness of the first graphene flake is about 0.3 nanometers to about 50 nanometers.

17. The silicon-containing structure of claim 16 , wherein the first graphene flake is oriented at an angle of about 0° to about 90° with respect to a major axis of the silicon, and the first graphene flake is spaced apart from the silicon suboxide by a distance of about 1,000 nm or less.

18. The silicon-containing structure of claim 1 , wherein the second carbon flake of the silicon composite primary particle is a second graphene flake, which comprises about 1 to about 30 graphene layers, and

a total thickness of the second carbon flake is about 0.3 nanometers to about 50 nanometers.

19. The silicon-containing structure of claim 1 , wherein the second carbon flake is oriented at an angle of about 0° to about 90° with respect to a major axis of the silicon, and the second graphene flake is spaced apart from the silicon suboxide by a distance of about 10 nm or less.

20. The silicon-containing structure of claim 1 , wherein the silicon suboxide has a thickness of about 30 micrometers or less.

21. The silicon-containing structure of claim 1 , wherein a shape of the silicon comprises a sphere, a nanowire, a needle, a rod, a particle, a nanotube, a nanorod, a wafer, a nanoribbon, or a combination thereof.

22. The silicon-containing structure of claim 1 , wherein the porous silicon secondary particle has an average particle diameter of about 200 nanometers to about 50 micrometers, a specific surface area of about 0.1 square meters per gram to about 100 square meters per gram, and a density of about 0.1 grams per cubic centimeter to about 2.8 grams per cubic centimeter.

23. The silicon-containing structure of claim 1 , wherein the silicon comprises particles having an average size of about 10 nanometers to about 30 micrometers.

24. The silicon-containing structure of claim 1 , wherein the silicon composite has a D50 particle size of about 1 micrometer to about 30 micrometers, a D10 particle size of about 0.001 micrometer to about 10 micrometers, and a D90 particle size of about 10 micrometers to about 60 micrometers.

25. A method of preparing the silicon-containing structure of claim 1 , the method comprising:

providing the porous silicon secondary particle;

supplying a gas comprising a carbon source to the porous silicon secondary particle and thermally treating the porous silicon secondary particle to prepare the silicon composite;

combining the silicon composite, the first amorphous carbon, and an additive;

forming the carbonaceous coating layer comprising the first amorphous carbon on a surface of the silicon composite; and

disposing the second amorphous carbon in pores of the porous silicon secondary particle to form the silicon-containing structure.

26. The method of claim 25 , wherein the providing of the porous silicon secondary particle comprises preparing a composition comprising a dispersing agent, a first solvent, and particles comprising silicon and silicon suboxide on a surface of the silicon.

27. The method of claim 25 , wherein an amount of the first amorphous carbon in the composition obtained by combining the silicon composite, the first amorphous carbon, and an additive is about 3 parts by weight to about 60 parts by weight with respect to 100 parts by weight of the silicon composite.

28. The method of claim 25 , wherein the combining of the silicon composite, the first amorphous carbon, and the additive is performed using a revolution and rotation centrifugal mixer.

29. The method of claim 25 , wherein the combining of the silicon composite, the first amorphous carbon, and the additive is performed at an agitation speed of about 2,000 rotations per minute or less and at a temperature of about 100° C. or less.

30. The method of claim 25 , wherein the additive comprises N-methylpyrrolidone, isopropyl alcohol, dimethylformamide, butanol, acetone, or a combination thereof.

31. A carbon composite comprising,

the silicon-containing structure of claim 1 , and

a carbonaceous material.

32. The carbon composite of claim 31 , wherein the carbonaceous material comprises graphene, graphite, fullerene, graphitic carbon, carbon fiber, carbon nanotubes, or a combination thereof, and an amount of the carbonaceous material is about 0.001 part by weight to about 99 parts by weight with respect to 100 parts by weight of the carbon composite.

33. An electrode comprising, the silicon-containing structure of claim 1 , a carbon composite comprising the silicon-containing structure and a carbonaceous material, or a combination thereof.

34. The electrode of claim 33 , wherein the electrode comprises the carbon composite comprising the silicon-containing structure and the carbonaceous material, and the carbonaceous material comprises graphene, graphite, fullerene, carbon fiber, graphitic carbon, carbon nanotubes, or a combination thereof, and an amount of the carbonaceous material is about 0.001 part by weight to about 99 parts by weight with respect to 100 parts by weight of the carbon composite.

35. A lithium battery comprising the electrode of claim 33 .

36. A device comprising, the silicon-containing structure of claim 1 , a carbon composite comprising the silicon-containing structure and a carbonaceous material, or a combination thereof.

37. The device of claim 36 , wherein the device is a field emission device, a biosensor, a semiconductor device, or a thermoelectric device.

38. A silicon-containing structure comprising:

a silicon composite comprising,

a porous silicon secondary particle, and

a first carbon flake on a surface of the porous silicon secondary particle;

a carbonaceous coating layer on the silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and

the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer,

wherein the porous silicon secondary particle comprises an aggregate of silicon composite primary particles, each comprising,

silicon,

a silicon-containing layer on a surface of the silicon, and

a second carbon flake on a surface of the silicon-containing layer,

wherein the silicon-containing layer comprises a silicon suboxide, a thermal treatment product of the silicon suboxide, or a combination thereof,

wherein the silicon-containing layer is a film, a matrix, or a combination thereof,

wherein the first carbon flake and the second carbon flake are each independently a film, a particle, a matrix, or a combination thereof, and

wherein a ratio of a total weight of the first carbon flake and the second carbon flake to a total weight of the first amorphous carbon and the second amorphous carbon is about 1:1 to about 1.10.

39. The silicon-containing structure of claim 38 wherein the thermal treatment product of the silicon suboxide is a product obtained by thermally treating the silicon suboxide in an atmosphere comprising a carbon source gas or a combination of a carbon source gas and a reducing gas.

40. The silicon-containing structure of claim 38 , wherein the thermal treatment product of the silicon suboxide comprises silicon in a SiO y matrix, wherein 0≤y≤2.

41. The silicon-containing structure of claim 38 , wherein the thermal treatment product of the silicon suboxide comprises:

a structure comprising silicon in a SiO 2 matrix,

a structure comprising silicon in a matrix comprising SiO 2 and SiO x , wherein 0<x<2, or

a structure including silicon in a SiO x , wherein 0<x<2, matrix.

42. A silicon-containing structure comprising:

a silicon composite comprising

a porous silicon secondary particle, and

a first carbon flake on a surface of the porous silicon secondary particle;

a carbonaceous coating layer on the silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and

the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer,

wherein the porous silicon secondary particle comprises an aggregate of silicon composite primary particles, each comprising

silicon,

a silicon suboxide on a surface of the silicon, and

a second carbon flake on a surface of the silicon suboxide, and

wherein a ratio of a total weight of the first carbon flake and the second carbon flake to a total weight of the first amorphous carbon and the second amorphous carbon is about 1:1 to about 1:10.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2019
From: SAMSUNG ELECTRONICS CO., LTD.; SAMSUNG SDI CO., LTD.
To: SAMSUNG ELECTRONICS CO., LTD.; SAMSUNG SDI CO., LTD.
Reel/Frame 051366/0480 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 22, 2019
From: MOON, JONGSEOK; KIM, MIJONG; KIM, SEWON; SHIM, KYUEUN; HAN, SUNGSOO; SON, INHYUK; LEE, JUMYEUNG; LIM, MINWOO
To: SAMSUNG ELECTRONICS CO., LTD.; SAMSUNG SDI CO., LTD.
Reel/Frame 048089/0751 →
Priority Claims (2)
KR 10-2018-0009938 · Jan 26, 2018 · national
KR 10-2018-0173070 · Dec 28, 2018 · national
Continuity (1)
Related Publication 20190233294A1 · Aug 1, 2019
Cited By (2)
US 12,221,346 US 12,388,087