Light-emitting device, manufacturing method thereof and display module using the same
A light-emitting device includes a light-emitting element, a supporting structure, a first wavelength conversion structure, and a light-absorbing layer. The light-emitting element includes a plurality of active stacks separated from each other, a first-type semiconductor layer continuously arranged on the plurality of active stacks, and a plurality of second-type semiconductor layers under the plurality of active stacks. The supporting structure is disposed on the light-emitting element and includes a first opening. The first wavelength conversion structure disposed in the first opening. The light-absorbing layer disposed on the top surface of the supporting structure.
1. A light-emitting device, comprising:
a light-emitting element comprising:
a plurality of active stacks separated from each other;
a first-type semiconductor layer continuously arranged on the plurality of active stacks;
a plurality of second-type semiconductor layers under the plurality of active stacks;
a supporting structure disposed on the light-emitting element and comprising a first opening and a top surface;
a first wavelength conversion structure disposed in the first opening; and
a light-absorbing layer disposed on the top surface.
2. The light-emitting device according to claim 1 , wherein the supporting structure comprises a side surface which is not covered by the light-absorbing layer.
3. The light-emitting device according to claim 2 , wherein the first wavelength conversion structure is directly contacted with the side surface.
4. The light-emitting device according to claim 1 , wherein the supporting structure comprises metal.
5. The light-emitting device according to claim 1 , wherein light-absorbing layer comprises a mixture of resin and light-absorbing substance.
6. The light-emitting device according to claim 1 , further comprising a light-transmitting layer arranged in the first opening and covering the first wavelength conversion structure.
7. The light-emitting device according to claim 6 , wherein the light-transmitting layer has a topmost surface coplanar with that of the light-absorbing layer.
8. The light-emitting device according to claim 1 , wherein each of active stacks has a width larger than that of the first opening.
9. The light-emitting device according to claim 1 , wherein the light-emitting element comprises a first electrode electrically connected to the first-type semiconductor layer and a second electrode electrically connected to the second-type semiconductor layer, and the supporting structure covers the first electrode in a cross-sectional view.
10. The light-emitting device according to claim 1 , wherein the light-emitting element comprises a first electrode electrically connected to the first-type semiconductor layer and a plurality of second electrodes electrically connected to the plurality of second-type semiconductor layers, and the number of the first electrode is less than that of the plurality of second electrodes.
11. The light-emitting device according to claim 1 , wherein the first wavelength conversion structure comprises quantum-dot luminescent material.
12. The light-emitting device according to claim 1 , wherein the first wavelength conversion structure has a thickness which is less than that of the supporting structure.
13. The light-emitting device according to claim 1 , wherein the first wavelength conversion structure has a thickness which is larger than that of the supporting structure.
14. The light-emitting device according to claim 1 , wherein the light-emitting element has a thickness less than that of the supporting structure.
15. The light-emitting device according to claim 1 , further comprising a thickness ratio of the supporting structure and the light-emitting element of a range 1˜2.5.
16. The light-emitting device according to claim 1 , wherein the supporting structure has a second opening separated from the first opening.
17. The light-emitting device according to claim 16 , further comprising a second wavelength conversion structure disposed in the second opening.
18. The light-emitting device according to claim 17 , wherein the light-emitting device emits a white light converted by the second wavelength conversion structure.
19. The light-emitting device according to claim 1 , wherein the number of separated plurality of active stacks is larger than 3.
20. The light-emitting device according to claim 1 , wherein the light-emitting element emits a blue light or a violet light.