IP Library Granted Patent US 11,335,845
Granted Patent B2
US 11,335,845 · App. 16/255,069 · Granted May 17, 2022

High breakdown strength ferroelectric SrHfO

Inventors: Lauren Marie Garten (Camp Springs, MD); David Samuel Ginley (Evergreen, CO); Kristin Aslaug Ceder-Persson (Orinda, CA); Shyam Sundar Dwaraknath (Berkeley, CA); Susan Trolier-McKinstry (State College, PA)
Assignees: Alliance for Sustainable Energy, LLC; The Regents of the University of California; The Penn State Research Foundation
H01L41/1871C01G27/00C04B35/48C30B23/02C30B23/025C30B23/066C30B29/22H01L41/316C01P2002/70C01P2002/90C01P2004/04C01P2006/40
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Quick Facts
Patent No.
US 11,335,845
App. No.
16/255,069
Granted
May 17, 2022
Kind
B2
Abstract

Methods for making metastable lead-free piezoelectric materials are presented herein.

Claims (12)

1. A ferroelectric induced piezoelectric material having a piezoelectric response (d 33 ) of greater than about 5.2 pm V −1 wherein the piezoelectric material comprises a metastable SrHfO 3 polymorph with a P4 mm structure and wherein the polymorph is grown on a substrate suitable for epitaxial growth of the polymorph; and wherein the substrate is SrTiO 3 .

2. The material of claim 1 wherein the polymorph has a breakdown strength of greater than about 25 MV/cm.

3. The material of claim 1 wherein the polymorph is capable of a piezoelectric response (e 33 ) of at least 8.8 C m −2 .

4. The material of claim 1 having an average coercive field of about 83 kVcm −1 and a remnant polarization of about 1.2 μCcm −2 .

5. The material of claim 1 wherein the polymorph is epitaxially stabilized by a substrate upon which the polymorph is grown.

6. A method for making a lead-free piezoelectric material comprising the steps of using pulsed laser deposition to grow epitaxial films from a SrHfO 3 target on a SrTiO 3 substrate wherein the lead-free piezoelectric material has a response of 5.2 pm V −1 for a 35 nm film, wherein the film comprises a metastable SrHfO 3 polymorph with a P4 mm structure and identifying the lead-free piezoelectric material comprising a piezoelectric tensor (e ij max ) of greater than 3 C m −2 by using density functional theory (DFT); and identifying a substrate that is capable of epitaxially stabilizing the piezoelectric material.

7. The method of claim 6 wherein the growth takes place at a temperature of greater than about 450° C.

8. The method of claim 6 wherein the growth takes place at a total pressure of about 100 mTorr oxygen.

9. The method of claim 6 wherein the growth takes place by using a pulse rate of the laser of between about 10 and about 40 Hz.

10. The method of claim 6 wherein the lead-free piezoelectric material has a breakdown strength of greater than about 25 MV/cm.

11. The method of claim 6 wherein the lead-free piezoelectric material is a film that is capable of a ferroelectric-induced large signal effective converse piezoelectric response of 5.2 pm V −1 .

12. The method of claim 6 wherein the lead-free piezoelectric material has an average coercive field of about 83 kVcm −1 and a remnant polarization of about 1.2 μCcm −2 .

Assignments (5)
CHANGE OF NAME Recorded Dec 16, 2025
From: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
To: ALLIANCE FOR ENERGY INNOVATION, LLC
Reel/Frame 073993/0276 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2019
From: TROLIER-MCKINSTRY, SUSAN
To: THE PENN STATE RESEARCH FOUNDATION
Reel/Frame 048895/0497 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 9, 2019
From: CEDER-PERSSON, KRISTIN A.; DWARAKNATH, SHYAM
To: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Reel/Frame 048837/0654 →
CONFIRMATORY LICENSE Recorded Mar 18, 2019
From: NATIONAL RENEWABLE ENERGY LABORATORY
To: UNITED STATES DEPARTMENT OF ENERGY
Reel/Frame 048627/0416 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2019
From: GARTEN, LAUREN MARIE; GINLEY, DAVID SAMUEL
To: ALLIANCE FOR SUSTAINABLE ENERGY, LLC
Reel/Frame 048108/0975 →