Substrate processing method

1. A substrate processing method comprising:

supplying a first gas to a substrate on which a pattern structure is formed;

purging the first gas;

supplying a second gas and a third gas to form a thin film on the pattern structure in a plasma atmosphere, wherein the second gas is reactive with the first gas; and

purging the second gas,

wherein, during the forming of the thin film, the second gas is supplied through at least a central gas inlet of a gas supply unit, and the third gas is supplied through an additional gas inlet which is spaced apart from the central gas inlet of the gas supply unit, and

the third gas is a gas different from the first gas and the second gas,

wherein, as the third gas is supplied through the additional gas inlet, a flow of the third gas at an edge of the substrate is increased, and thus a radical density near a center of the substrate is increased.

2. The substrate processing method of claim 1 , wherein the third gas comprises a nitrogen component.

3. The substrate processing method of claim 2 , wherein the third gas comprises at least one of a nitrous oxide gas and a nitrogen gas.

4. The substrate processing method of claim 1 , wherein the second gas comprises an oxygen component and the third gas comprises a nitrogen component, and

the thin film is an oxide film formed at a temperature of about 100° C. or less.

5. The substrate processing method of claim 4 , wherein the second gas is an oxygen gas and the third gas is a nitrous oxide gas, and

a flow ratio of the oxygen gas to the nitrous oxide gas is 1:0.625 to 1:1.25.

6. The substrate processing method of claim 4 , wherein the second gas is an oxygen gas and the third gas is a nitrogen gas, and

a flow ratio of the oxygen gas and the nitrogen gas is 1:0.625 to 1:1.25.

7. The substrate processing method of claim 1 , wherein damage to the pattern structure occurs in the plasma atmosphere.

8. The substrate processing method of claim 7 , wherein the damage to the pattern structure is changed by the third gas supplied through the additional gas inlet.

9. The substrate processing method of claim 7 , wherein the pattern structure comprises a spin-on hardmask (SOH).

10. The substrate processing method of claim 1 , further comprising a double patterning process or a quadruple patterning process performed using the thin film formed on the pattern structure.

11. The substrate processing method of claim 1 , wherein, in the plasma atmosphere, the second gas is ionized and the third gas is not ionized.

12. The substrate processing method of claim 1 , wherein the first gas reacts with the second gas at a first temperature, and

the first gas does not react with the third gas at the first temperature.

13. The substrate processing method of claim 1 , wherein the third gas has greater ionization energy than ionization energy of the first gas and the second gas.

14. A substrate processing method comprising:

supplying a silicon-containing gas to a substrate on which a pattern structure that is reactive with oxygen is formed;

purging the silicon-containing gas;

supplying an oxygen-containing gas and a nitrogen-containing gas in a plasma atmosphere at a temperature of about 100° C. or less, and forming a silicon oxide film on the pattern structure; and

purging the oxygen-containing gas,

wherein, during the forming of the silicon oxide film, the oxygen-containing gas is supplied through at least a central gas inlet of a gas supply unit, and the nitrogen-containing gas is supplied through an additional gas inlet which is spaced apart from the central gas inlet of the gas supply unit,

wherein the nitrogen-containing gas is supplied through the additional gas inlet to increase a flow at an edge of the substrate.

15. The substrate processing method of claim 14 , wherein the pattern structure that is reactive with oxygen radical is a spin-on hardmask,

the oxygen-containing gas is an oxygen gas and the nitrogen-containing gas is a nitrous oxide gas, and

a flow ratio of the oxygen gas to the nitrous oxide gas in the plasma atmosphere is 1:0.625 to 1:1.25.

16. The substrate processing method of claim 14 , wherein, during the forming of the silicon oxide film, the silicon-containing gas adsorbed on the pattern structure of the substrate reacts with the oxygen-containing gas and does not react with the nitrogen-containing gas.

17. The substrate processing method of claim 14 , wherein

due to the increased flow of nitrogen-containing gas at the edge of the substrate, a density of a radical that is reactive with the pattern structure at the edge of the substrate is reduced,

due to the increased flow of nitrogen-containing gas at the edge of the substrate, the density of a radical that is reactive with the pattern structure at a center of the substrate is increased, and

damage to the pattern structure at the edge of the substrate and damage to the pattern structure near the center of the substrate become uniform.

18. A substrate processing method comprising:

supplying a source material to a substrate on which a pattern structure that is reactive with a reactant is formed; and

supplying the reactant through at least a central gas inlet of a supply unit in a plasma atmosphere,

wherein, during the supplying of the reactant, a blocking material different from the reactant is supplied through an additional gas inlet that is spaced apart from the central gas inlet of the supply unit, and

a flow of the blocking material at the edge of the substrate is increased, thereby increasing a radical density of the reactant near a center of the substrate.

19. The substrate processing method of claim 18 , wherein the blocking material has greater ionization energy than ionization energy of an inert gas.