IP Library Granted Patent US 11,164,748
Granted Patent B2
US 11,164,748 · App. 16/256,194 · Granted Nov 2, 2021

Method and device for plating a recess in a substrate

Inventors: Franz Markut (St. Georgen, AT); Thomas Wirnsberger (Seeboden, AT); Oliver Knoll (Salzburg, AT); Andreas Gleissner (Döbriach, AT); Harald Okorn-Schmidt (Klagenfurt, AT); Philipp Engesser (Villach, AT)
Assignee: Semsyso GMBH
H01L21/2885B05C3/005B05C3/02B05C9/14C25D5/003C25D5/02C25D5/34C25D7/123C25D17/001C25D21/04C25D21/12H01L21/76877H05K3/42
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Quick Facts
Patent No.
US 11,164,748
App. No.
16/256,194
Granted
Nov 2, 2021
Kind
B2
Abstract

The invention relates to a method for plating a recess in a substrate, a device for plating a recess in a substrate and a system for plating a recess in a substrate comprising the device. The method for plating a recess in a substrate comprises the following steps: a) Providing a substrate with a substrate surface comprising at least one recess, b) applying a replacement gas to the recess to replace an amount of ambient gas in the recess to at least partially clear the recess from the ambient gas, c) applying a processing fluid to the recess, wherein the replacement gas dissolves in the processing fluid to at least partially clear the recess from the replacement gas, and d) plating the recess.

Claims (17)

1. A device ( 50 ) for plating a recess in a substrate ( 10 ), comprising:

a replacement gas unit ( 51 ) configured to apply a replacement gas ( 30 ) to a recess in a substrate ( 10 ) to replace an amount of ambient gas ( 20 ) in the recess to at least partially clear the recess from the ambient gas ( 20 ),

a processing fluid unit ( 52 ) configured to apply a processing fluid ( 40 ) to the recess, wherein the replacement gas ( 30 ) dissolves in the processing fluid ( 40 ) to at least partially clear the recess from the replacement gas ( 30 ), and

a plating unit ( 59 ) configured to plate the recess in the substrate ( 10 ), wherein the replacement gas unit ( 51 ) is directly above the processing fluid unit ( 52 ) and the plating unit ( 59 ).

2. Device ( 50 ) according to claim 1 , wherein the processing fluid unit ( 52 ) comprises the plating unit ( 59 ) and the processing fluid ( 40 ) comprises a plating fluid ( 40 a ) configured to plate the recess in the substrate ( 10 ).

3. Device ( 50 ) according to claim 1 , wherein the processing fluid unit ( 52 ) comprises a rinsing unit ( 60 ) and the processing fluid ( 40 ) comprises a rinsing fluid ( 40 b ) configured to rinse the recess.

4. Device ( 50 ) according to claim 3 , wherein the replacement gas unit ( 51 ) and/or the rinsing unit ( 60 ) are arranged in contact with the plating fluid ( 40 a ).

5. Device ( 50 ) according to claim 4 , wherein the replacement gas unit ( 51 ) and/or the rinsing unit ( 60 ) are floating in the plating fluid ( 40 a ).

6. Device ( 50 ) according to claim 5 , wherein the replacement gas unit ( 51 ) and/or the rinsing unit ( 60 ) are arranged at a distance to the plating fluid ( 40 a ).

7. Device ( 50 ) according to claim 6 , wherein the two or more gas nozzles ( 53 ) are configured to generate a replacement gas cushion or replacement gas curtain to be passed by the recess of the substrate ( 10 ).

8. Device ( 50 ) according to claim 7 , wherein the replacement gas unit ( 51 ) further comprises a drain ( 54 ) and/or an exhaust ( 55 ).

9. Device ( 50 ) according to claim 8 , wherein the replacement gas unit ( 51 ) is an arm-shaped member ( 57 ), and wherein the arm-shaped member ( 57 ) and the substrate ( 10 ) are rotatable relative to each other.

10. Device ( 50 ) according to claim 9 , wherein the arm-shaped member ( 57 ) is configured to apply the replacement gas ( 30 ), the rinsing fluid ( 40 b ), an initiating agent and/or a chemically active substance to the recess and/or the substrate ( 10 ).

11. Device ( 50 ) according to claim 10 , wherein the replacement gas unit ( 51 ) is integrated into a substrate holder ( 12 ) configured to hold the substrate ( 10 ).

12. A system ( 70 ) for plating a recess in a substrate ( 10 ) comprising

the device ( 50 ) for plating the recess in the substrate ( 10 ) as in any one of the preceding claims, and

a device control ( 71 ), wherein the device control ( 71 ) is configured to control a gas replacement in the recess of the substrate ( 10 ), an application of the processing fluid ( 40 ) to the recess and/or the plating of the recess.

Assignments (2)
CHANGE OF NAME Recorded Mar 11, 2026
From: SEMSYSCO GMBH
To: LAM RESEARCH SALZBURG GMBH
Reel/Frame 075091/0218 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 25, 2019
From: MARKUT, FRANZ; WIRNSBERGER, THOMAS; KNOLL, OLIVER; GLEISSNER, ANDREAS; OKORN-SCHMIDT, HARALD; ENGESSER, PHILIPP
To: SEMSYSCO GMBH
Reel/Frame 048994/0197 →
Priority Claims (1)
GB 1801201 · Jan 25, 2018 · national
Continuity (1)
Related Publication 20190228975A1 · Jul 25, 2019