Micro light emitting element and image display device

1. A micro light emitting element comprising:

a nitride semiconductor layer including an N-side layer, a light emission layer, and a P-side layer laminated in this order from a side of a light emission surface;

a first electrode placed on a side of the P-side layer;

a second electrode placed on a side of the N-side layer; and

a plurality of micro-mesas formed in a surface on the side of the P-side layer of the nitride semiconductor layer, wherein:

each of the plurality of micro-mesas has a flat top surface of the P-side layer and surrounds the light emission layer by a slope, the slope being a surface extended from the P-side layer to a portion of the N-side layer, and being inclined at an angle within a prescribed range including 45° with respect to the light emission layer;

slopes of adjacent micro-mesas of the plurality of micro-mesas are at least partially touched with each other at end portions of the slopes;

the first electrode is in direct contact with the P-side layer and entirely covers a surface on the side of the P-side layer of the micro light emitting element;

the first electrode is a continuous layer that covers an entirety of the plurality of micro-mesas;

a side wall forming a contour of the micro light emitting element, the sidewall including a side surface of the nitride semiconductor layer; and

an entirety of the side surface is covered with a transparent insulating film and a metal reflective film.

2. The micro light emitting element according to claim 1 , wherein the prescribed range is 45°±10°.

3. The micro light emitting element according to claim 1 , wherein a vertical distance from the light emission layer to a bottom portion of the slope is equal to or less than three times a diameter of the light emission layer in a plan view.

4. The micro light emitting element according to claim 1 , wherein a taper angle formed by the side wall and the light emission surface is from 70° to 110°.

5. The micro light emitting element according to claim 1 , wherein when the micro light emitting element is viewed from the side of the P-side layer in a plan view, the plurality of micro-mesas are periodically arranged.

6. An image display device comprising:

a plurality of micro light emitting elements;

a driving circuit substrate having formed thereon a driver circuit configured to supply drive current to each of the plurality of micro light emitting elements, wherein:

the plurality of micro light emitting elements are laminated on the driving circuit substrate in a two-dimensional array;

each of the plurality of micro light emitting elements comprises:

a nitride semiconductor layer including an N-side layer, a light emission layer, and a P-side layer laminated in this order from a side of a light emission surface;

a first electrode placed on a side of the P-side layer;

a second electrode placed on a side of the N-side layer; and

a plurality of micro-mesas formed in a surface on the side of the P-side layer of the nitride semiconductor layer;

each of the plurality of micro-mesas has a flat top surface of the P-side layer and surrounds the light emission layer by a slope, the slope being a surface extended from the P-side layer to a portion of the N-side layer, and being inclined at an angle within a prescribed range including 45° with respect to the light emission layer;

the image display device further comprises:

a connection element that includes the nitride semiconductor layer;

the first electrode; and

the second electrode, wherein:

the connection element electrically connects the second electrode and the first electrode to each other;

the connection element further includes the plurality of micro-mesas formed in a surface on the side of the P-side layer of the nitride semiconductor layer and a micro mesa vacancy formed to expose the N-side layer on the side of the P-side layer of the nitride semiconductor layer, and electrically connecting the first electrode and the second electrode through the N-side layer; and

the micro mesa vacancy, which is surrounded by the plurality of micro-mesas, is a region in which an entire convex part of the P-side layer that forms one of the plurality of micro-mesas in a cross-sectional view does not exist, the one of the plurality of micro-mesas having a same size and shape as a size and shape of each of the plurality of micro-mesas.

7. The micro light emitting element according to claim 1 , wherein the slope is covered with a transparent insulating film.

8. The micro light emitting element according to claim 7 , wherein the transparent insulating film covering the slope is covered with a metal film.

9. The micro light emitting element according to claim 7 , wherein the transparent insulating film covering the slope is entirely covered with the first electrode.

10. The image display device according to claim 6 , wherein the first electrode entirely covers a surface on the side of the P-side layer of the plurality of micro light emitting elements.

11. The image display device according to claim 6 , wherein the slope is covered with a transparent insulating film.

12. The image display device according to claim 11 , wherein the transparent insulating film covering the slope is entirely covered with the first electrode.

13. The image display device according to claim 6 , wherein a side wall forming a contour of each of the plurality of micro light emitting elements and extending from the N-side layer to the P-side layer is covered with a transparent insulating film and a metal reflective film.

14. The micro light emitting element according to claim 1 , wherein the continuous layer is made of a multilayer film.

15. A micro light emitting element comprising:

a nitride semiconductor layer including a first conductive layer, a light emission layer, and a second conductive layer with a conductive type opposite to a conductive type of the first conductive layer laminated in this order from a side of a light emission surface;

a first electrode placed on a side of the second conductive layer;

a second electrode connected to the first conductive layer; and

a plurality of micro-mesas formed in a surface on the side of the second conductive layer of the nitride semiconductor layer, wherein:

each of the plurality of micro-mesas has a flat top surface of the second conductive layer and surrounds the light emission layer by a slope, the slope being a surface extended from the second conductive layer to a part of the first conductive layer, and being inclined at an angle within a prescribed range including 45° with respect to the light emission layer, wherein

the first electrode is in direct contact with the second conductive layer and entirely covers the plurality of micro-mesas;

the first electrode is a continuous layer that covers an entirety of the plurality of micro-mesas;

a side wall forming a contour of the micro light emitting element, the side wall including a side surface of the nitride semiconductor layer; and

an entirety of the side surface is covered with a transparent insulating film and a metal reflective film.

16. The micro light emitting element according to claim 15 , wherein the slope is covered with a transparent insulating film.

17. The micro light emitting element according to claim 16 , wherein the transparent insulating film covering the slope is entirely covered with the first electrode.

18. The micro light emitting element according to claim 1 , wherein the continuous layer is a multilayer film including a metal reflection layer on the P-side layer side.

19. The micro light emitting element according to claim 15 , wherein the continuous layer is a multilayer film including a metal reflection layer on the second conductive layer side.