Switching device formed from correlated electron material
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.
1. A correlated electron material (CEM) device, comprising:
a first plurality of conductive traces positioned over an insulating substrate; and
one or more electrodes positioned between adjacent conductive traces of the first plurality of conductive traces, wherein at least a portion of at least one of the first plurality of conductive traces to comprise a first localized portion of a CEM, wherein the first localized portion of the CEM to comprise a dopant having an atomic concentration of a nitrogen-containing ligand or a carbon-containing ligand approximately in the range of 0.1% to 10.0%.
2. The CEM device of claim 1 , further comprising:
a second plurality of conductive traces positioned over the insulating substrate, wherein the second plurality of conductive traces to be separated from the first plurality of conductive traces by an insulating material, and wherein the one or more electrodes positioned between adjacent conductive traces of the first plurality of conductive traces is also to be positioned between adjacent conductive traces of the second plurality of conductive traces.
3. The CEM device of claim 2 , wherein the first plurality of conductive traces or the second plurality of conductive traces, or a combination thereof, to comprise at least 85.0% nickel oxide.
4. The CEM device of claim 2 , wherein the first plurality of conductive traces or the second plurality of conductive traces, or a combination thereof, to comprise at least 85.0% of an oxide of a d-block element or an oxide of an f-block element, or an alloy of two or more oxides of a d-block element and an f-block element.
5. The CEM device of claim 2 , wherein a second localized portion of CEM to be formed from at least one of the second plurality of conductive traces.
6. The CEM device of claim 1 , wherein the dopant to comprise the nitrogen-containing ligand.
7. The CEM device of claim 6 , wherein the dopant to comprise the carbon-containing ligand.
8. The CEM device of claim 1 , wherein the one or more electrodes to comprise an atomic concentration of at least 50.0% of platinum, titanium, copper, aluminum, cobalt, nickel, tungsten, tungsten nitride, cobalt silicide, ruthenium oxide, chromium, gold, palladium, indium tin oxide, tantalum, silver or iridium, or any combination thereof, or an oxide thereof comprising at least 50.0% metal.
9. The CEM device of claim 1 , wherein the first localized portion of the CEM is to be formed responsive to conversion of at least the portion of at least one of the first plurality of conductive traces to the CEM.
10. The CEM device of claim 1 , wherein the one or more electrodes to comprise titanium nitride.
11. The CEM device of claim 1 , wherein the one or more electrodes are to be formed from a plurality of layers of electrically conductive material.
12. The CEM device of claim 1 , wherein the CEM device to comprise a multi-level switching device.
13. The CEM device of claim 12 , wherein the one or more electrodes to comprise a plurality of electrodes configured as a two-dimensional array.
14. The CEM device of claim 2 , wherein one or more of the first plurality of conductive traces and one or more of the second plurality of conductive traces are to be buried within the insulative material.
15. The CEM device of claim 12 , wherein the one or more electrodes are to be at least partially buried within the insulative substrate.
16. The CEM device of claim 2 , wherein a second localized portion of the CEM is to be formed responsive to conversion of at least a portion of at least one of the second plurality of conductive traces to the CEM.
17. The CEM device of claim 16 , wherein the first localized portion or the second localized portion, or a combination thereof, to comprise one or more dopants comprising CO or NH 3 , or a combination thereof.
18. The CEM device of claim 16 , wherein the first localized portion or the second localized portion, or a combination thereof, to comprise an atomic concentration of NiO:CO or NiO:NH 3 , or a combination thereof, of between 0.1% and 10.0%.
19. The CEM device of claim 1 , wherein the insulative substrate to comprise an atomic concentration of at least 85.0% of SiN.