Structure and formation method of semiconductor device with magnetic element

1. A method for forming a semiconductor device structure, comprising:

forming an adhesive layer over a semiconductor substrate;

forming a magnetic element over the adhesive layer;

forming an isolation element extending across the magnetic element, wherein the isolation element partially covers the top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element;

partially removing the adhesive layer such that an edge of the adhesive layer is laterally disposed between an edge of the magnetic element and an edge of the isolation element; and

forming a conductive line over the isolation element.

2. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the adhesive layer comprises titanium, aluminum, copper, or a combination thereof.

3. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the adhesive layer comprises an outer portion and an inner portion surrounded by the outer portion, and the method further comprises:

removing the outer portion of the adhesive layer before the magnetic element is formed.

4. The method for forming a semiconductor device structure as claimed in claim 3 , wherein the semiconductor substrate is a semiconductor wafer, the adhesive layer has a terminal after the outer portion is removed, and the terminal of the adhesive layer is laterally separated from an edge of the semiconductor substrate by a distance.

5. The method for forming a semiconductor device structure as claimed in claim 4 , wherein the distance is in a range from about 1000 μm to about 2000 μm.

6. The method for forming a semiconductor device structure as claimed in claim 1 , wherein the formation of the magnetic element comprises:

forming a plurality of magnetic layers over the adhesive layer;

forming a patterned mask layer over the magnetic layers; and

wet etching the magnetic layers to partially remove the magnetic layers, wherein remaining portions of the magnetic layers form the magnetic element.

7. The method for forming a semiconductor device structure as claimed in claim 6 , further comprising forming a protective layer and an etch stop layer over the semiconductor substrate before the formation of the magnetic layers and after the formation of the adhesive layer.

8. The method for forming a semiconductor device structure as claimed in claim 7 , wherein the etch stop layer and the protective layer are made of different materials.

9. The method for forming a semiconductor device structure as claimed in claim 1 , further comprising forming a dielectric layer over the conductive line, the isolation element, and the magnetic element.

10. The method for forming a semiconductor device structure as claimed in claim 9 , wherein the dielectric layer is formed directly on the magnetic element.

11. A method for forming a semiconductor device structure, comprising:

forming a metal layer over a semiconductor substrate;

forming a magnetic element over the metal layer;

forming an isolation element directly on the magnetic element and the metal layer;

partially removing the metal layer such that an edge of the metal layer is laterally disposed between an edge of the magnetic element and an edge of the isolation element; and

forming a conductive line over the isolation element.

12. The method for forming a semiconductor device structure as claimed in claim 11 , further comprising partially removing the metal layer such that an edge of the metal layer is below the isolation element.

13. The method for forming a semiconductor device structure as claimed in claim 11 , further comprising removing an outer portion of the metal layer before the magnetic element is formed.

14. The method for forming a semiconductor device structure as claimed in claim 11 , wherein the metal layer is made of titanium, aluminum, copper, or a combination thereof.

15. The method for forming a semiconductor device structure as claimed in claim 11 , further comprising forming a dielectric layer over the conductive line, the isolation element, and the magnetic element, wherein the dielectric layer is formed directly on the magnetic element.

16. A semiconductor device structure, comprising:

a semiconductor substrate;

a magnetic element over the semiconductor substrate;

an adhesive element between the magnetic element and the semiconductor substrate;

an isolation element extending across the magnetic element, wherein the isolation element partially covers a top surface of the magnetic element and partially covers sidewall surfaces of the magnetic element, and an edge of the adhesive element is laterally disposed between an edge of the magnetic element and an edge of the isolation element; and

a conductive line over the isolation element.

17. The semiconductor device structure as claimed in claim 16 , wherein the adhesive element comprises titanium, aluminum, copper, or a combination thereof.

18. The semiconductor device structure as claimed in claim 16 , further comprising a protective layer and an etch stop layer between the magnetic element and the adhesive element, wherein the etch stop layer and the protective layer are made of different materials.

19. The semiconductor device structure as claimed in claim 16 , wherein the magnetic element comprises multiple sub-layers, and each sub-layers is larger than another sub-layer above it.

20. The semiconductor device structure as claimed in claim 16 , wherein the isolation element, the adhesive layer, and the conductive line together surround a hole.