Semiconductor device with redistribution layers on partial encapsulation and non-photosensitive passivation layers
View Patent ↗A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include providing a carrier with a non-photosensitive protection layer, forming a pattern in the non-photosensitive protection layer, providing a semiconductor die with a contact pad on a first surface, and bonding the semiconductor die to the non-photosensitive protection layer such that the contact pad aligns with the pattern formed in the non-photosensitive protection layer. A second surface opposite to the first surface of the semiconductor die, side surfaces between the first and second surfaces of the semiconductor die, and a portion of a first surface of the non-photosensitive protection layer may be encapsulated with an encapsulant. The carrier may be removed leaving the non-photosensitive protection layer bonded to the semiconductor die. A redistribution layer may be formed on the contact pad and a second surface of the non-photosensitive protection layer opposite to the first surface.
1. A semiconductor device, comprising:
a semiconductor die comprising a first surface, a second surface opposite the first surface, a contact pad on the first surface, and a side surface between the first surface and the second surface;
a first encapsulant comprising a first surface and a second surface opposite the first surface, the first encapsulant encapsulating the side surface of the semiconductor die;
a redistribution structure that comprises a conductive layer that is coupled to the contact pad, the conductive layer comprising a contact portion that extends over the first surface of the first encapsulant; and
a second encapsulant comprising a single layer of electrically insulating material, wherein the single layer of electrically insulating material comprises a first surface and a second surface opposite the first surface, and wherein the second surface of the single layer of electrically insulating material covers the first surface of the semiconductor die, the redistribution structure, and the first surface of the first encapsulant and contacts the conductive layer of the redistribution structure.
2. The semiconductor device of claim 1 , further comprising:
a via that extends through a first surface of the second encapsulant to the contact portion of the conductive layer; and
a conductive bump in the via, the conductive bump coupled to the contact portion and protruding beyond the first surface of the second encapsulant.
3. The semiconductor device of claim 2 , wherein the conductive bump directly contacts the contact portion of the conductive layer.
4. The semiconductor device of claim 1 , wherein the second surface of the second encapsulant directly contacts the first surface of the first encapsulant.
5. The semiconductor device of claim 1 , wherein the second surface of the second encapsulant directly contacts the first surface of the semiconductor die.
6. The semiconductor device of claim 1 , wherein the second surface of the semiconductor die and the second surface of the first encapsulant are coplanar.
7. The semiconductor device of claim 1 , wherein the first surface of the semiconductor die and the first surface of the first encapsulant are coplanar.
8. The semiconductor device of claim 1 , wherein the first and second encapsulants comprise a same encapsulant material.
9. A semiconductor device, comprising:
a semiconductor die comprising a first surface, a second surface opposite the first surface, a contact pad on the first surface, and a side surface between the first surface and the second surface;
a redistribution structure that is coupled to the contact pad, the redistribution structure comprising a contact portion that extends beyond the side surface of the semiconductor die;
a single encapsulating material that encapsulates the first surface of the semiconductor die, the side surface of the semiconductor die, and the redistribution structure, wherein the single encapsulating material directly contacts the first surface of the semiconductor die; and
a conductive bump coupled to the contact portion, contacting the single encapsulating material, and protruding beyond an outer surface of the single encapsulating material.
10. The semiconductor device of claim 9 , wherein the conductive bump directly contacts the contact portion of the redistribution structure.
11. The semiconductor device of claim 9 , wherein a redistribution layer of the redistribution structure directly contacts the contact pad of the semiconductor die.
12. The semiconductor device of claim 9 , wherein the single encapsulating material directly contacts the redistribution structure.
13. The semiconductor device of claim 9 , wherein the encapsulating material is provided by a plurality of layers of the single encapsulating material.
14. A semiconductor device, comprising:
a semiconductor die comprising a first surface, a second surface opposite the first surface, a contact pad on the first surface, and a side surface between the first surface and the second surface;
a first encapsulant comprising a first surface and a second surface opposite the first surface, the first encapsulant encapsulating the side surface of the semiconductor die;
a redistribution structure comprising one or more conductive redistribution layers wherein a first conductive redistribution layer of the one or more conductive redistribution layers extends from the contact pad to a contact portion beyond the side surface of the semiconductor die;
a second encapsulant comprising an epoxy-based resin, wherein the epoxy-based resin covers the first surface of the semiconductor die and the redistribution structure, wherein the second encapsulant provides a via aligned with the contact portion of the first conductive redistribution layer; and
a conductive bump coupled to the contact portion through the via provided by the second encapsulant and protruding beyond an outer surface of the second encapsulant.
15. The semiconductor device of claim 14 , wherein the conductive bump directly contacts the contact portion of the first conductive redistribution layer.
16. The semiconductor device of claim 14 , wherein the first conductive redistribution layer directly contacts the contact pad of the semiconductor die.
17. The semiconductor device of claim 14 , wherein the second encapsulant directly contacts the first surface of the semiconductor die.
18. The semiconductor device of claim 14 , wherein the first encapsulant and the second encapsulant directly contact the redistribution structure.
19. The semiconductor device of claim 14 , wherein the first encapsulant encapsulates the second surface of the semiconductor die.