Two-terminal reversibly switchable memory device
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.
1. A two-terminal memory cell comprising:
a mixed valence oxide;
a mixed electronic ionic conductor coupled with the mixed valence oxide;
a first memory electrode in contact with the mixed valence oxide; and
a second memory electrode coupled with the mixed electronic ionic conductor.
2. The two-terminal memory cell of claim 1 , wherein:
the mixed electronic ionic conductor is uniform in conduction.
3. The two-terminal memory cell of claim 1 , wherein:
the mixed electronic ionic conductor is lacking in uniformity in conduction.
4. The two-terminal memory cell of claim 3 , wherein:
the uniformity of the mixed electronic ionic conductor varies in a direction from the mixed valence oxide to the second memory electrode.
5. The two-terminal memory cell of claim 3 , wherein:
the uniformity of the mixed electronic ionic conductor varies in a direction orthogonal to a direction from the mixed valence oxide to the second memory electrode.
6. The two-terminal memory cell of claim 1 , wherein:
the mixed valence oxide is uniform in oxidation.
7. The two-terminal memory cell of claim 1 , wherein:
the mixed valence oxide is lacking in uniformity in oxidation.
8. The two-terminal memory cell of claim 7 , wherein:
the uniformity of the mixed valence oxide varies in a direction from the mixed electronic ionic conductor to the first memory electrode.
9. The two-terminal memory cell of claim 8 , wherein:
the uniformity of the mixed valence oxide varies in a direction orthogonal to a direction from the mixed electronic ionic conductor to the first memory electrode.
10. The two-terminal memory cell of claim 1 , wherein the mixed valence oxide is crystalline.
11. A three-terminal memory cell comprising:
a memory element comprising:
a mixed valence oxide, and
a mixed electronic ionic conductor coupled with the mixed valence oxide;
a gate memory electrode coupled with the mixed valence oxide;
a source memory electrode coupled with the memory element; and
a drain memory electrode coupled with the memory element.
12. The three-terminal memory cell of claim 11 , wherein:
the mixed electronic ionic conductor is uniform in conduction.
13. The three-terminal memory cell of claim 11 , wherein:
the mixed electronic ionic conductor is lacking in uniformity in conduction.
14. The three-terminal memory cell of claim 13 , wherein:
the uniformity of the mixed electronic ionic conductor varies in a direction from the mixed valence oxide to at least one of the source memory electrode and the drain memory electrode.
15. The three-terminal memory cell of claim 13 , wherein:
the uniformity of the mixed electronic ionic conductor varies in a direction orthogonal to a direction from the mixed valence oxide to at least one of the source memory electrode and the drain memory electrode.
16. The three-terminal memory cell of claim 11 , wherein:
the mixed valence oxide is uniform in oxidation.
17. The three-terminal memory cell of claim 11 , wherein:
the mixed valence oxide is lacking in uniformity in oxidation.
18. The three-terminal memory cell of claim 17 , wherein:
the uniformity of the mixed valence oxide varies in a direction from the mixed electronic ionic conductor to the gate memory electrode.
19. The three-terminal memory cell of claim 17 , wherein:
the uniformity of the mixed valence oxide varies in a direction orthogonal to a direction from the mixed electronic ionic conductor to the gate memory electrode.
20. The three-terminal memory cell of claim 11 , wherein the mixed valence oxide is crystalline.