High temperature superconductor

1. A superconductor device, comprising:

an enhancing matrix material with a phonon mode above 30 terahertz; and

a core material, wherein the core material and the enhancing matrix material together create a system of strongly coupled carriers.

2. The superconductor device of claim 1 , wherein the system of strongly coupled carriers includes a plurality of excitations.

3. The superconductor device of claim 2 , wherein the plurality of excitations includes at least one of phonons, plasmons, excitons, magnetic excitations, polarons, or bi-polarons.

4. The superconductor device of claim 2 , wherein the plurality of excitations includes high frequency phonons.

5. The superconductor device of claim 1 , wherein the enhancing matrix material comprises a ferroelectric material.

6. The superconductor device of claim 5 , wherein the ferroelectric material has a spontaneous electric polarization that can be reversed by application of an external electric field.

7. The superconductor device of claim 1 , wherein the enhancing matrix material comprises a ferromagnetic material.

8. The superconductor device of claim 7 , wherein the core material includes p-wave like superconductor material.

9. The superconductor device of claim 1 , wherein the enhancing matrix material comprises a hydride.

10. The superconductor device of claim 9 , wherein the hydride includes zirconium hydride.

11. The superconductor device of claim 1 , wherein a superconductivity transition temperature of the superconductor device is at least 273 K.

12. The superconductor device of claim 1 , wherein the core material comprises a plurality of low-dimensional conductive features, including at least one low-dimensional conductive feature from the group of low-dimensional conductive features consisting of: a two-dimensional conductive monolayer, a two-dimensional multilayer stack, one-dimensional conductive nanoscale wires, one-dimensional nanoribbons, zero-dimensional nanoscale particles, and zero-dimensional nanoscale crystals.

13. The superconductor device of claim 1 , wherein the core material comprises a plurality of low-dimensional conductive features, at least some of which are nanoribbons, wherein the nanoribbons have a width that is of an order of a superconducting coherence length of the superconductor device.

14. The superconductor device of claim 1 , wherein the core material comprises a plurality of low-dimensional conductive features, at least some of which are nanotubes, wherein the nanotubes have a diameter that is of an order of a superconducting coherence length of the superconductor device.

15. The superconductor device of claim 1 , wherein the core material comprises a plurality of low-dimensional conductive features, at least some of which are nanoscale wires, wherein the nanoscale wires have a diameter that is of an order of a superconducting coherence length of the superconductor device.

16. The superconductor device of claim 1 , wherein the core material comprises a plurality of low-dimensional conductive features, at least some of which are nanoscale particles, wherein the nanoscale particles have a diameter that is of an order of a superconducting coherence length of the superconductor device.

17. The superconductor device of claim 1 , wherein the core material comprises a plurality of low-dimensional conductive features, at least some of which are nanoscale crystals, wherein the nanoscale crystals have a diameter that is of an order of a superconducting coherence length of the superconductor device.

18. The superconductor device of claim 1 , wherein the enhancing matrix material and the core material form a multilayer stack that includes a layer of matrix material and a layer of core material.

19. The superconductor device of claim 18 , wherein the multilayer stack comprises one or more periods.

20. The superconductor device of claim 18 , wherein the multilayer stack creates a system of strongly coupled carriers between the layer of matrix material and the layer of core material.

21. The superconductor device of claim 1 , wherein the enhancing matrix material is not a superconductor.

22. The superconductor device of claim 1 , wherein the enhancing matrix material is a polymer.

23. The superconductor device of claim 1 , wherein the enhancing matrix material is ice.

24. The superconductor device of claim 1 , wherein superconductivity occurs in the core material.

25. The superconductor device of claim 1 , wherein the core material comprises a plurality of low-dimensional conductive features.

26. The superconductor device of claim 25 , wherein the enhancing matrix material includes a plurality of phonons of a lattice of the enhancing matrix material that interact with a plurality of electrons of the plurality of low-dimensional conductive features.

27. The superconductor device of claim 25 , wherein the enhancing matrix material includes an interface adjacent to the plurality of low-dimensional conductive features, and wherein a plurality of electrons couple via phonons across the interface.

28. The superconductor device of claim 25 , wherein the enhancing matrix material includes a plurality of phonons of a lattice of the enhancing matrix material to interact with a plurality of electrons of the plurality of low-dimensional conductive features to cause an increase in a superconductivity transition temperature of the superconductor device.

29. The superconductor device of claim 25 , wherein a plurality of electrons of the plurality of low-dimensional conductive features interact with the enhancing matrix material to cause a plurality of excitations that increase a superconductivity transition temperature of the superconductor device.

30. The superconductor device of claim 29 , wherein each of the plurality of excitations includes at least one excitation from the group of excitations consisting of: phonons, plasmons, excitons, magnetic excitations, polarons, and bi-polarons.

31. A superconductor device, comprising:

an enhancing matrix material; and

a core material comprising a plurality of low-dimensional conductive features, wherein the core material and the enhancing matrix material together create a system of strongly coupled carriers,

wherein the enhancing matrix material includes a plurality of phonons of a lattice of the enhancing matrix material that interact with a plurality of electrons of the plurality of low-dimensional conductive features.

32. The superconductor device of claim 31 , wherein the plurality of low-dimensional conductive features are embedded in the enhancing matrix material.

33. The superconductor device of claim 31 , wherein at least some of the plurality of low-dimensional conductive features are superconductors, and wherein a superconductivity transition temperature of the superconductor device is higher than a superconductivity transition temperature of each individual low-dimensional conductive feature.

34. The superconductor device of claim 31 , wherein the low-dimensional conductive features are arranged in a pattern.

35. The superconductor device of claim 31 , wherein the enhancing matrix material comprises a ferroelectric material that has a spontaneous electric polarization that can be reversed by application of an external electric field.

36. The superconductor device of claim 31 , wherein the enhancing matrix material comprises a hydride.

37. A superconductor device comprising:

an enhancing matrix material; and

a core material comprising a plurality of low-dimensional conductive features, wherein the core material and the enhancing matrix material together create a system of strongly coupled carriers,

wherein the enhancing matrix material includes an interface adjacent to the plurality of low-dimensional conductive features, and wherein a plurality of electrons couple via magnons across the interface.

38. A superconductor device comprising: an enhancing matrix material; and

a core material comprising a plurality of low-dimensional conductive features, wherein the core material and the enhancing matrix material together create a system of strongly coupled carriers,

wherein an average distance between adjacent low-dimensional conductive features in the plurality of low-dimensional conductive features is substantially equal to an electron tunneling length, and wherein the superconductor device operates as a homogenous superconductor by tunneling electrons among the plurality of low-dimensional conductive features.

39. A superconductor device comprising:

an enhancing matrix material; and

a core material comprising a plurality of low-dimensional conductive features, wherein the core material and the enhancing matrix material together create a system of strongly coupled carriers,

wherein the plurality of low-dimensional conductive features is a defect layer.

40. The superconductor device of claim 39 , wherein the system of strongly coupled carriers includes a plurality of excitations.

41. The superconductor device of claim 39 , wherein the enhancing matrix material comprises a ferroelectric material that has a spontaneous electric polarization that can be reversed by application of an external electric field.

42. The superconductor device of claim 39 , wherein the enhancing matrix material comprises a hydride.

43. A superconductor device comprising:

an enhancing matrix material; and

a core material comprising a plurality of low-dimensional conductive features, wherein the core material and the enhancing matrix material together create a system of strongly coupled carriers,

wherein the plurality of low-dimensional conductive features is a plurality of defects.

44. The superconductor device of claim 43 , wherein the system of strongly coupled carriers includes a plurality of excitations.

45. The superconductor device of claim 43 , wherein the enhancing matrix material comprises a ferroelectric material that has a spontaneous electric polarization that can be reversed by application of an external electric field.

46. The superconductor device of claim 43 , wherein the enhancing matrix material comprises a hydride.