Semiconductor device and semiconductor device manufacturing method
A semiconductor device includes a semiconductor substrate, a polysilicon layer fixed to the semiconductor substrate, and a silicon nitride layer in contact with the polysilicon layer, wherein the polysilicon layer includes an n-type layer and a p-type layer in contact with the n-type layer; a semiconductor device manufacturing method includes forming the polysilicon layer covering at least one hydrogen-containing layer, and heating the polysilicon layer and the hydrogen-containing layer.
1. A semiconductor device, comprising:
a semiconductor substrate;
a polysilicon layer fixed to the semiconductor substrate by an insulating film;
silicon nitride layers in contact with the polysilicon layer;
electrode layers formed on the polysilicon layer; and
a protective film covered and directly contacted: i) peripheries of each of the electrode layers, the polysilicon layer and the insulating film, and ii) portions of a top surface of the semiconductor substrate,
wherein a material of the protective film is different from that of the insulating film,
wherein the polysilicon layer comprises an n-type layer abutting a p-type layer in a lateral direction, and
the polysilicon layer includes at least one of said silicon nitride layers in each of the n-type layer and the p-type layer.
2. The semiconductor device according to claim 1 , wherein the n-type layer and the p-type layer constitute a temperature detection diode configured to detect a temperature of the semiconductor substrate.
3. The semiconductor device according to claim 1 , wherein the entire peripheries of the silicon nitride layers are covered by the polysilicon layer.