Semiconductor device and method of manufacturing same
A semiconductor device comprises a substrate. A plurality of electrode layers and a plurality of insulating layers are formed in an alternating stack above the substrate. A semiconductor column extends through the plurality of electrode layers and the plurality of insulating layers. The semiconductor column comprises a single-crystal semiconductor material on an outer peripheral surface facing the electrode and insulating layers. First insulating films are formed between the semiconductor column and the electrode layers. The first insulating films are spaced from each other along the column length. Each first insulating film corresponds to one electrode layer. A charge storage layer is between each of the first insulating films and the electrode layers. A second insulating film is between the charge storage layer and each of the electrode layers.
1. A semiconductor device, comprising:
a substrate;
a plurality of electrode layers and a plurality of insulating layers in an alternating stack above a surface of the substrate;
a semiconductor column extending in a first direction orthogonal to the surface of the substrate through the plurality of electrode layers and the plurality of insulating layers, the semiconductor column comprising a single-crystal semiconductor material on an outer periphery;
a plurality of first insulating films between the semiconductor column and the electrode layers, the first insulating films being spaced from each other in the first direction, each first insulating film corresponding to one electrode layer respectively;
a charge storage layer between each of the first insulating films and each of the electrode layers in a second direction parallel to the surface of the substrate; and
a second insulating film between the charge storage layer and each of the electrode layers, wherein
each first insulating film is between the semiconductor column and the charge storage layer in the second direction.
2. The semiconductor device according to claim 1 , wherein
the substrate comprises a semiconductor material at the surface, and
the single-crystal semiconductor material of the semiconductor column has the same crystal plane orientation as the semiconductor material of the substrate.
3. The semiconductor device according to claim 1 , wherein the single-crystal semiconductor material of the semiconductor column comprises silicon and at least one of boron, phosphorus, arsenic, carbon, or germanium.
4. The semiconductor device according to claim 1 , wherein the semiconductor column further comprises a third insulating film surrounded by the single crystal semiconductor material in a plane parallel to the surface of the substrate.
5. The semiconductor device according to claim 1 , wherein an interior core portion of the semiconductor column is filled with insulating material.
6. The semiconductor device according to claim 1 , wherein each first insulating film extends in the first direction beyond a position of an upper surface and a position of a lower surface of the corresponding electrode layer to contact insulating layers adjacent to the corresponding electrode layer in the first direction.
7. The semiconductor device according to claim 1 , wherein the charge storage layer and the second insulating film cover upper and lowers surfaces of each electrode layer.
8. The semiconductor device according to claim 1 , wherein
the substrate comprises single crystal silicon,
the electrode layers are metal,
the insulating layers are silicon dioxide,
the single-crystal semiconductor material of the semiconductor column is single crystal silicon,
the first insulating films are silicon dioxide or silicon oxynitride,
the charge storage layer is silicon nitride, and
the second insulating film is silicon dioxide.
9. The semiconductor device according to claim 8 , wherein the single-crystal semiconductor material of the semiconductor column has the same crystal plane orientation as the single-crystal silicon of the substrate.
10. The semiconductor device according to claim 1 , wherein the semiconductor column is tubular shaped along the first direction and an insulating material fills an interior region of the semiconductor column.
11. The semiconductor device according to claim 1 , wherein the electrode layers comprise word lines connected to a plurality of memory cells formed along a length of the semiconductor column in the first direction.
12. The semiconductor device according to claim 1 , wherein the charge storage layer directly contacts the second insulating film.
13. The semiconductor device according to claim 1 , wherein each first insulating film is not between insulating layers in the alternating stack in the first direction.
14. A semiconductor memory device, comprising:
a substrate having a first semiconductor material at a surface thereof;
an alternating stack of electrode layers and insulating layers above the surface of the substrate;
a memory column extending in a first direction orthogonal to the surface of the substrate through the electrode layers and the insulating layers, the memory column comprising a single-crystal semiconductor material on an outer periphery facing the electrode layers and the insulating layers;
a plurality of tunnel insulating films between the memory column and the electrode layers, the tunnel insulating films being spaced from each other in the first direction, each tunnel insulating film being in a position corresponding to one of the electrode layers;
a charge storage layer between each of the tunnel insulating films and each of the electrode layers in a second direction parallel to the surface of the substrate; and
a block insulating film between the charge storage layer and each of the electrode layers, wherein
each tunnel insulating film is between the memory column and the charge storage layer in the second direction.
15. The semiconductor device according to claim 14 , wherein
the single-crystal semiconductor material of the memory column has the same crystal plane orientation as the semiconductor material of the substrate.
16. The semiconductor memory device according to claim 15 , wherein
the single-crystal semiconductor material of the memory column comprises silicon and at least one of boron, phosphorus, arsenic, carbon, or germanium.
17. The semiconductor memory device according to claim 14 , wherein an interior core portion of the memory column is filled with insulating material.
18. The semiconductor device according to claim 14 , wherein the charge storage layer and the block insulating film are between each electrode layer and insulating layer adjacent in first direction.
19. The semiconductor device according to claim 14 , wherein the charge storage layer directly contacts the block insulating film.
20. The semiconductor device according to claim 14 , wherein each tunnel insulating film is not between insulating layers of the alternating stack in the first direction.