IP Library Granted Patent US 11,294,590
Granted Patent B2
US 11,294,590 · App. 16/276,375 · Granted Apr 5, 2022

Storage device with fail page replacement capability and operating method thereof

Inventor: Chi Eun Kim (Seoul, KR)
Assignee: SK hynix Inc.
G06F3/0652G06F3/0604G06F3/064G06F3/0676G06F3/0679
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Quick Facts
Patent No.
US 11,294,590
App. No.
16/276,375
Granted
Apr 5, 2022
Kind
B2
Abstract

The present disclosure relates to an electronic device. A storage device having improved memory block use efficiency includes a plurality of memory blocks each including a plurality of pages storing data, an erase page storage configured to store erase page information about erase pages in a victim block among the plurality of memory blocks and a bad block controller configured to replace a fail page in which a program fail occurred with one of the erase pages, based on the erase page information, the fail page being one of the plurality of pages in one of the plurality of memory blocks other than the victim block.

Claims (29)

1. A storage device, comprising:

a plurality of memory blocks each including a plurality of pages storing data;

an erase page storage configured to store erase page information about erase pages in a victim block among the plurality of memory blocks; and

a bad block controller configured to replace a fail page in which a program fail occurred with one of the erase pages, based on the erase page information, the fail page being one of the plurality of pages in one of the plurality of memory blocks other than the victim block,

wherein the victim block is a bad block including a first fail page in which a program fail has occurred firstly among the plurality of memory blocks, and

wherein the erase pages are subsequent pages of the first fail page in a program direction.

2. The storage device of claim 1 , wherein the erase pages include remaining pages other than a page on which a program operation is performed.

3. The storage device of claim 2 , wherein the erase pages include remaining pages, other than pages adjacent to a fail page in which a program fail has occurred, among pages in the victim block.

4. The storage device of claim 1 , wherein the erase pages are included in the victim block and correspond to pages in an erase state after garbage collection is performed on the victim block.

5. The storage device of claim 1 , wherein the erase page information includes information about physical addresses of the erase pages.

6. The storage device of claim 1 , wherein the erase page storage stores the erase page information in a circular queue.

7. The storage device of claim 1 , wherein the bad block controller comprises:

an operation controller configured to determine the victim block among the plurality of memory blocks; and

a page information setter configured to receive fail page information about a fail page in which a program fail has occurred, among pages in the victim block, from the operation controller and provide the erase page information provided from the erase page storage to the operation controller.

8. The storage device of claim 7 , wherein the operation controller stores data to be stored in the fail page, among the pages included in the one of the memory blocks except for the victim block, in one of the erase pages.

9. The storage device of claim 7 , wherein the page information setter generates mapping information indicating that a physical address of the fail page, among the pages included in the one of the memory blocks except for the victim block, is changed to a physical address of one of the erase pages.

10. A method of operating a storage device, comprising:

performing a program operation on a plurality of pages included in a plurality of memory blocks;

determining a bad block including a first fail page in which a program fail has occurred firstly, among the plurality of memory blocks, as a victim block;

storing erase page information about erase pages in the victim block; and

replacing a fail page in which a program fail occurs, among pages in one of the plurality of memory blocks other than the victim block, with one of the erase pages, based on the erase page information,

wherein the erase pages are subsequent pages of the first fail page in a program direction.

11. The method of claim 10 , wherein the erase pages include remaining pages other than a page on which the program operation is performed.

12. The method of claim 10 , wherein the storing of the erase page information comprises storing information about physical addresses of the erase pages.

13. The method of claim 10 , wherein the storing of the erase page information comprises storing information about the erase pages in a circular queue.

14. The method of claim 10 , further comprising generating mapping information indicating that a physical address of the fail page, among the pages included in the one of the memory blocks except for the victim block, is changed to a physical address of one of the erase pages.

15. The method of claim 10 , further comprising storing data to be stored in the fail page, among the pages included in the one of the memory blocks except for the victim block, in one of the erase pages.

16. The method of claim 10 , wherein the determining of the bad block as the victim block comprises determining a bad block in which a first program fail occurs, among the plurality of memory blocks, as the victim block.

17. The method of claim 10 , wherein the determining of the bad block as the victim block includes determining one of bad blocks in which at least two program fails occur, among the plurality of memory blocks, as the victim block according to a number of erase pages in each of the bad blocks.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 7, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067335/0246 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 14, 2019
From: KIM, CHI EUN
To: SK HYNIX INC.
Reel/Frame 048339/0448 →