Formation of nanoporous copper interconnect for electrical connection
Embodiments relate to nanoporous copper interconnects on a first body for electrically connecting to a second body. To fabricate the nanoporous copper interconnect, a zinc-copper alloy is deposited on recesses on the surface of the first body, and then the zinc is removed from the zinc-copper alloy to obtain nanoporous copper. The first body and the second body can be attached using bonding between oxide surfaces of the two bodies or be provided with underfill between the two bodies. The nanoporous copper electrically connects to an active layer or electrical components of the first body and the second bodies. Using nanoporous copper as interconnects is advantageous, among other reasons, because it can be formed at a low temperature, it is compatible with a standard complementary metal-oxide-semiconductor (CMOS) process, it provides good electrical conductivity, and it is less likely to cause issues due to migration of material.
1. A method comprising:
forming recesses at a first body for mounting the first body to a second body, the first body comprising an active layer and an inactive layer on top of the active layer, the recesses formed on a top surface of the inactive layer and electrically connected to electronic elements in the active layer via interconnects arranged in the inactive layer, wherein forming the recesses at the first body comprises etching through portions of an oxide layer on the top surface of the inactive layer to form the recesses at the portions of the oxide layer, the interconnects made of a same material;
depositing an alloy comprising copper and zinc on at least the formed recesses to form a layer of the copper-zinc alloy on a surface of the formed recesses using a seed layer on the top surface of the active layer;
removing the zinc from the layer of the copper-zinc alloy to produce, on the recesses, a nanoporous copper interconnects that are directly connected to the interconnects in the inactive layer;
planarizing the nanoporous copper interconnects and the top surface of the first body where the recesses are formed to make the nanoporous copper interconnect flush with the top surface of the first body and remove the seed layer from the top surface of the first body; and
collapsing the nanoporous copper interconnects into the recesses by pushing electrodes on the surface of a second body into the recesses.
2. The method of claim 1 , further comprising securing the first body and the second body by underfill responsive to collapsing the nanoporous copper interconnects.
3. The method of claim 1 , further comprising:
forming the active layer on a substrate;
forming the electronic elements comprising at least portions of the active layers; and
producing the first body by forming the inactive layer on the active layer.
4. The method of claim 1 , further comprising depositing a seed layer on the top surface of the first body where the recesses are formed for depositing the alloy.
5. A non-transitory computer-readable storage medium containing instructions executable by a processor, the instructions when executed causing the processor to:
form recesses at a first body for mounting the first body to a second body, the first body comprising an active layer and an inactive layer on top of the active layer, the recesses formed on a top surface of the inactive layer and electrically connected to electronic elements in the active layer via interconnects arranged in the inactive layer, wherein forming the recesses at the first body comprises etching through portions of an oxide layer on the top surface of the inactive layer to form the recesses at the portions of the oxide layer, the interconnects made of a same material;
deposit an alloy comprising copper and zinc on at least the formed recesses to form a layer of the copper-zinc alloy on a surface of the formed recesses using a seed layer on the top surface of the active layer;
remove the zinc from the layer of the copper-zinc alloy to produce, on the recesses, a nanoporous copper interconnects that are directly connected to the interconnects in the inactive layer;
planarize the nanoporous copper interconnects and the top surface of the first body where the recesses are formed to make the nanoporous copper interconnects flush with the top surface of the first body and remove the seed layer from the top surface of the first body; and
collapse the nanoporous copper interconnects into the recesses by pushing electrodes on the surface of a second body into the recesses.