Light-emitting device having package structure with quantum dot material and manufacturing method thereof
A light-emitting device includes a light-emitting unit, a light-transmitting layer, a wavelength conversion structure, and a reflective layer. The light-emitting unit includes a top surface and a first side surface. The light-transmitting layer covers the top surface and the first side surface of the light-emitting unit. The wavelength conversion structure is located on the light-transmitting layer. The wavelength conversion structure includes a wavelength conversion layer, a first barrier layer located on the wavelength conversion layer, a second barrier layer located under the wavelength conversion layer, and a third barrier layer covering side surfaces of the wavelength conversion layer, the first barrier layer, and the second barrier layer. The reflective layer surrounds the light-transmitting layer and the wavelength conversion structure.
1. A light-emitting device, comprising:
a light-emitting unit comprising a top surface and a first side surface;
a light-transmitting layer covering the top surface and the first side surface;
a wavelength conversion structure disposed on the light-transmitting layer, and comprising a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, and a third barrier layer; and
a reflective layer surrounding the light-emitting unit and the wavelength conversion structure;
wherein the wavelength conversion layer, the first barrier layer, and the second barrier layer have lateral surfaces which are substantially coplanar with each other and covered by the third barrier layer.
2. The light-emitting device according to claim 1 , wherein the first barrier layer and the second barrier layer are in direct contact with the wavelength conversion layer.
3. The light-emitting device according to claim 1 , wherein the reflective layer has an inner surface which has a first portion covering the light-transmitting layer and inclined with respect to the first side surface.
4. The light-emitting device according to claim 3 , wherein the wavelength conversion structure has a topmost surface, the inner surface has a second portion which is perpendicular to the topmost surface.
5. The light-emitting device according to claim 4 , wherein the second portion is inclined with the first portion.
6. The light-emitting device according to claim 1 , wherein the wavelength conversion structure has a width larger than that of the light-emitting unit.
7. The light-emitting device according to claim 1 , wherein an area ratio of the wavelength conversion structure to the light-emitting unit is in a range of 1.5˜10 in a top view.
8. The light-emitting device according to claim 1 , further comprising an adhesive layer located between the wavelength conversion structure and the light-emitting unit.
9. The light-emitting device according to claim 1 , wherein the wavelength conversion structure is distant from the top surface of the light-emitting unit by a distance greater than zero.
10. The light-emitting device according to claim 1 , wherein the wavelength conversion layer comprises a quantum dot material.
11. A light-emitting device, comprising:
a light-emitting unit comprising a top surface and a first side surface;
a light-transmitting layer covering the top surface and the first side surface;
a wavelength conversion structure disposed on the light-transmitting layer, and comprising a wavelength conversion layer, a first barrier layer disposed on the wavelength conversion layer, a second barrier layer disposed under the wavelength conversion layer, and a third barrier layer;
an adhesive layer located between the wavelength conversion structure and the light-emitting unit; and
a reflective layer surrounding the light-emitting unit and the wavelength conversion structure,
wherein the wavelength conversion layer, the first barrier layer, and the second barrier layer have side surfaces which are covered by the third barrier.
12. The light-emitting device according to claim 11 , wherein the first barrier layer and the second barrier layer are in direct contact with the wavelength conversion layer.
13. The light-emitting device according to claim 11 , wherein the reflective layer has an inner surface which has a first portion covering the light-transmitting layer and inclined with respect to the first side surface.
14. The light-emitting device according to claim 13 , wherein the wavelength conversion structure has a topmost surface, the inner surface has a second portion which is perpendicular to the topmost surface.
15. The light-emitting device according to claim 14 , wherein the second portion is inclined with the first portion.
16. The light-emitting device according to claim 11 , wherein the wavelength conversion structure has a width larger than that of the light-emitting unit.
17. The light-emitting device according to claim 11 , wherein an area ratio of the wavelength conversion structure to the light-emitting unit is in a range of 1.5˜10 in a top view.
18. The light-emitting device according to claim 11 , wherein the wavelength conversion structure is distant from the top surface of the light-emitting unit by a distance greater than zero.
19. The light-emitting device according to claim 11 , wherein the wavelength conversion layer comprises a quantum dot material.