High temperature annealing in X-ray source fabrication
The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray production, which may facilitate faster scan times for inspection or examination procedures.
1. An X-ray source, comprising:
an emitter configured to emit an electron beam; and
a target configured to generate X-rays when impacted by the electron beam, the target comprising:
at least one X-ray generating layer comprising X-ray generating material;
at least one thermally-conductive layer in thermal communication with each X-ray generating layer; and
a carbide layer positioned between each X-ray generating layer and adjacent thermally-conductive layer.
2. The X-ray source of claim 1 , wherein the X-ray generating material comprises tungsten, the thermally-conductive layer comprises diamond, and the carbide layer comprises tungsten carbide.
3. The X-ray source of claim 1 , wherein the X-ray generating material comprises one or more of tungsten, molybdenum, titanium-zirconium-molybdenum alloy (TZM), tungsten-rhenium alloy, copper-tungsten alloy, chromium, iron, cobalt, copper, silver.
4. The X-ray source of claim 1 , wherein the thermally-conductive layers comprise one or more of highly ordered pyrolytic graphite (HOPG), diamond, beryllium oxide, silicon carbide, copper-molybdenum, copper, tungsten-copper alloy, or silver-diamond.
5. The X-ray source of claim 1 , wherein one thermally conductive layer comprises a thermally conductive substrate on which the remaining layers are deposited.
6. A method for fabricating an X-ray source target, comprising:
depositing, in alternation, an X-ray generating material and a thermally-conductive material on a thermally-conductive substrate to form a multi-layer target structure of alternative X-ray generating layers and thermally-conductive layers;
performing an annealing operation on the multi-layer target structure, wherein the annealing operation results in carbide layers formed between each layer of X-ray generating material and thermally-conductive material.
7. The method of claim 6 , wherein the X-ray generating material is tungsten, the thermally-conductive material is diamond, and the carbide layers are tungsten carbide layers.
8. The method of claim 6 , wherein the deposition of X-ray generating material on thermally-conductive material is carried out under different conditions than the deposition of thermally-conductive material on X-ray generating material.
9. The method of claim 6 , wherein the act of depositing ends with a layer of X-ray generating material on the top of the multi-layer target structure.
10. The method of claim 6 , wherein the act of depositing ends with a layer of thermally-conductive material on the top of the multi-layer target structure.
11. The method of claim 6 , wherein one or more additional annealing operations are performed between deposition steps of the act of depositing X-ray generating material and thermally-conductive material.
12. The method of claim 6 , wherein the annealing step is performed in vacuum at between about 800° C. to about 1,300° C.
13. A method for fabricating an X-ray source target, comprising:
depositing, in alternation, an X-ray generating material and a thermally-conductive material on a substrate to form a multi-layer target structure of alternative X-ray generating layers and thermally-conductive layers; and
performing an annealing operation on the multi-layer target structure;
wherein, after the annealing operation, a planar density of hydrogen held within some or all of the X-ray generating layers is less than 5×10 16 /cm 2 ; and
wherein after the annealing operation, each thermally conductive layer comprises grain boundaries in which hydrogen is held, and wherein the planar density hydrogen held within some or all of the thermally conductive layers is less than 5×10 16 /cm 2 .
14. The method of claim 13 , wherein the X-ray generating material comprises one or more of tungsten, molybdenum, titanium-zirconium-molybdenum alloy (TZM), tungsten-rhenium alloy, copper-tungsten alloy, chromium, iron, cobalt, copper, silver.
15. The method of claim 13 , wherein the thermally-conductive layers comprise one or more of highly ordered pyrolytic graphite (HOPG), diamond, beryllium oxide, silicon carbide, copper-molybdenum, copper, tungsten-copper alloy, or silver-diamond.
16. The method of claim 13 , wherein the at least one X-ray generating layer comprises tungsten and the at least one thermally-conductive layer comprises diamond.
17. The method of claim 13 , wherein the grain size of the grain boundaries is between approximately 0.5 um to approximately 60 μm.