Semiconductor module, electronic component and method of manufacturing a semiconductor module

1. A method, comprising:

forming at least one trench in separation regions of a first surface of a semiconductor wafer;

forming at least one trench in non-device regions of the first surface of the semiconductor wafer, the separation regions being arranged between component positions of the semiconductor wafer, the component positions comprising at least two electronic devices for forming a circuit, a non-device region arranged between a first device region comprising a first electronic device and a second device region comprising a second electronic device, and a first metallization structure arranged on the first surface in the first device region and in the second device region;

applying a first epoxy layer to the first surface of the semiconductor wafer such that the at least one trench in separation regions, the at least one trench in non-device regions, edge regions of the component positions, edge regions of the first device region and edge regions of the second device region are covered with the first epoxy layer;

removing portions of a second surface of the semiconductor wafer, the second surface opposing the first surface, to reveal portions of the first epoxy layer in the separation regions and in the non-device regions and to produce a worked second surface;

applying a second metallization layer to the worked second surface and operably coupling the first electronic device to the second electronic device to form the circuit;

inserting a separation line through the first epoxy layer in the separation regions to form a plurality of separate semiconductor modules comprising the circuit;

inserting conductive material into the at least one trench formed in the non-device regions; and

electrically coupling the conductive material to the first electronic device and to the second electronic device.

2. The method of claim 1 , further comprising:

inserting a via into the second device region;

inserting conductive material into the via; and

electrically coupling the conductive material to the first electronic device and to the second electronic device.

3. The method of claim 2 , wherein the via is inserted into the first surface of the semiconductor wafer and afterwards, the first metallization structure and the first epoxy layer is applied to the first surface and portions of the second surface of the semiconductor wafer are removed, or the via is inserted into the worked second surface of the semiconductor wafer.

4. The method of claim 1 , wherein the first epoxy layer is inserted into the at least one trench formed in the non-device regions, a via is formed in the first epoxy layer in the non-device regions such that side faces of the first device region and of the second device region bounding the via are covered with the first epoxy layer and the conductive material is applied to the first epoxy layer in the via, the conductive material extending from the first metallization structure in the second device region to the worked second surface.

5. The method of claim 1 , wherein a conductive via from the first surface of the semiconductor wafer to the worked second surface of the semiconductor wafer is formed by a conductive portion of the first device region or of the second device region, the conductive portion extending from the first surface of the semiconductor wafer to the worked second surface of the semiconductor wafer.

6. The method of claim 5 , wherein the second metallization layer is applied to the conductive material within the via to operably couple the first electronic device to the second electronic device.

7. The method of claim 1 , wherein the second metallization layer extends from the first device region over the non-device region to the second device region.

8. The method of claim 1 , wherein the separation line has a width that is less than the width of the at least one trench in the separation regions such that at least portions of side faces of the plurality of separate semiconductor modules comprise a portion of the first epoxy layer.

9. The method of claim 1 , wherein the first epoxy layer further covers edge regions of the first metallization structure.

10. The method of claim 1 , further comprising applying a second epoxy layer to the worked second surface that covers at least the first epoxy layer arranged in the separation regions.

11. The method of claim 10 , wherein the second epoxy layer covers the second metallization layer arranged on the first device region and exposes the second metallization layer arranged on the second device region.

12. The method of claim 1 , wherein the separate semiconductor modules each comprise the first device region comprising the first electronic device, the second device region comprising the second electronic device and the at least one trench in non-device regions, the at least one trench in non-device regions of the separate semiconductor modules being disposed between the first device region and the second device region and being filled by epoxy material from the first epoxy layer.