IP Library Granted Patent US 11,106,229
Granted Patent B2
US 11,106,229 · App. 16/283,325 · Granted Aug 31, 2021

Semiconductor integrated circuit including a regulator circuit

Inventor: Hiroyuki Ideno (Yokohama Kanagawa, JP)
Assignee: TOSHIBA MEMORY CORPORATION
G05F1/569G05F1/575H02H1/0007H02H9/025
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,106,229
App. No.
16/283,325
Granted
Aug 31, 2021
Kind
B2
Abstract

A semiconductor integrated circuit includes an output transistor, an error amplifier, a replica transistor, a current-limiting circuit, and a potential regulation circuit. The output transistor is electrically connected between a power supply-side first node and an output-side second node. The replica transistor is electrically connected between the first node and a fourth node. The replica transistor constitutes a circuit that is configured to operate to correspond to the output transistor. The current-limiting circuit has an input node, that is electrically connected to a fifth node between the fourth node and a first current source, and an output node that is electrically connected to a gate of the output transistor and a gate of the replica transistor. The potential regulation circuit is electrically connected to the second node and the fourth node.

Claims (45)

1. A semiconductor integrated circuit comprising:

an output transistor electrically connected between the power supply side first node and the output-side second node

an error amplifier having a first input terminal that is electrically connected to a third node between the second node and a standard potential, a second input terminal that is electrically connected to a reference voltage, and an output terminal that is electrically connected to a gate of the output transistor;

a replica transistor electrically connected between the first node and a fourth node that is different from the second node and constitutes a circuit that is configured to operate to correspond to the output transistor;

a current-limiting circuit having

an input node that is electrically connected to a fifth node between the fourth node and a first current source, wherein the fifth node is directly connected to the first current source, and

an output node that is electrically connected to a gate of the output transistor and a gate of the replica transistor; and

a potential regulation circuit electrically connected to the second node and the fourth node.

2. The semiconductor integrated circuit according to claim 1 , wherein

the potential regulation circuit is configured to make a potential of the second node equal to a potential of the fourth node.

3. The semiconductor integrated circuit according to claim 2 , wherein

the potential regulation circuit includes

a voltage follower having a first input terminal that is electrically connected to the second node, a first output terminal that is electrically connected to a second input terminal and the fourth node, and a second output terminal that is electrically connected to the fifth node.

4. The semiconductor integrated circuit according to claim 3 , wherein

the voltage follower includes:

a second error amplifier having a first input terminal that is electrically connected to the second node and a second input terminal that is electrically connected to the fourth node; and

a PMOS transistor having a gate that is connected to an output terminal of the second error amplifier, a source that is electrically connected to the fourth node, and a drain that is electrically connected to the first current source.

5. The semiconductor integrated circuit according to claim 4 , wherein the second error amplifier is configured to control a potential of the second node and the fourth node to be equal.

6. The semiconductor integrated circuit according to claim 2 , wherein

the potential regulation circuit includes

a current mirror circuit having a sense side that is electrically connected between the second node and a second current source and a mirror side that is electrically connected between the fourth node and the first current source.

7. The semiconductor integrated circuit according to claim 1 , wherein the output transistor and the replica transistor are PMOS transistors.

8. The semiconductor integrated circuit according to claim 1 , wherein a current of the output transistor is less than a current of the replica transistor.

9. A semiconductor integrated circuit comprising:

an output transistor electrically connected between a first node and a second node;

a replica transistor electrically connected between the first node and a third node that is different from the second node and constitutes a circuit that is configured to operate to correspond to the output transistor

a current-limiting circuit having an input node that is electrically connected to a fourth node between the third node and a first current source, wherein the fourth node is directly connected to the first current source, and a n output node that is electrically connected to a gate of the output transistor and a gate of the re plica transistor; and

a potential regulation circuit electrically connected to the second node and the third node.

10. The semiconductor integrated circuit according to claim 9 , wherein

the potential regulation circuit is configured to make a potential of the second node equal to a potential of the third node.

11. The semiconductor integrated circuit according to claim 10 , wherein

the potential regulation circuit includes

a voltage follower having a first input terminal that is electrically connected to the second node, a first output terminal that is electrically connected to a second input terminal and the third node, and a second output terminal that is electrically connected to the fourth node.

12. The semiconductor integrated circuit according to claim 11 , wherein

the voltage follower includes:

an error amplifier having a first input terminal that is electrically connected to the second node and a second input terminal that is electrically connected to the third node; and

a PMOS transistor having a gate that is connected to an output terminal of the error amplifier, a source that is electrically connected to the third node, and a drain that is electrically connected to the first current source.

13. The semiconductor integrated circuit according to claim 12 , wherein the second error amplifier is configured to control a potential of the second node and the fourth node to be equal.

14. The semiconductor integrated circuit according to claim 10 , wherein

the potential regulation circuit includes

a current mirror circuit having a sense side that is electrically connected between the second node and a second current source and a mirror side that is electrically connected between the third node and the first current source.

15. The semiconductor integrated circuit according to claim 9 , wherein the output transistor and the replica transistor are PMOS transistors.

16. The semiconductor integrated circuit according to claim 9 , wherein a current of the output transistor is less than a current of the replica transistor.

17. The semiconductor integrated circuit according to claim 1 , further comprising:

a PMOS transistor having a source that is electrically connected to the fourth node, and a drain that is electrically connected to the first current source.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Jan 31, 2022
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058905/0582 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2019
From: IDENO, HIROYUKI
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 049061/0555 →
Priority Claims (1)
JP JP2018-168621 · Sep 10, 2018 · national
Continuity (1)
Related Publication 20200081466A1 · Mar 12, 2020