GaN laminate and method of manufacturing the same
View Patent ↗To provide a new GaN laminate obtained by growing a GaN layer on a GaN substrate by HVPE, including: a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and a GaN layer epitaxially grown on the main surface of the GaN substrate, and having a thickness of 10 nm or more, wherein a surface of the GaN layer has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a predetermined direction and a terrace are alternately arranged.
1. A GaN laminate, comprising:
a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface, the c-plane having a Ga polarity; and
a GaN layer epitaxially grown directly on the main surface of the GaN substrate, and having a thickness of 10 μm or more,
wherein a surface of the GaN layer has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a predetermined direction and a terrace are alternately arranged.
2. The GaN laminate according to claim 1 , wherein the step has a height of bimolecular layers of GaN.
3. The GaN laminate according to claim 1 , wherein the substrate has a first region in which an off-angle is 0.3° or less which is an angle formed by a normal direction of the main surface and c-axis direction, and the step has a height of bimolecular layers of GaN on the surface of the GaN layer grown on the first region.
4. The GaN laminate according to claim 1 , wherein the step extends in a direction orthogonal to a-axis direction.
5. The GaN laminate according to claim 1 , wherein the substrate has a second region in the main surface, the second region having an off-angle inclined by more than 0.3° in the a-axis direction, which is an angle formed by a normal direction of the main surface and c-axis direction, and the step extends in the direction orthogonal to the a-axis direction.
6. The GaN laminate according to claim 1 , wherein the step extends in a direction orthogonal to m-axis direction.
7. The GaN laminate according to claim 1 , wherein the substrate has a third region in the main surface, the third region having an off angle inclined by more than 0.3° in m-axis direction, which is an angle formed by a normal direction of the main surface and c-axis direction, and the step extends in a direction orthogonal to the m-axis direction on the surface of the GaN layer grown on the third region.
8. The GaN laminate according to claim 1 , wherein on the surface of the GaN layer, rms value of a surface roughness obtained by AFM measurement in a 100 μm square region is less than 10 nm.
9. The GaN laminate according to claim 1 , wherein on the surface of the GaN layer, rms value of a surface roughness obtained by AFM measurement in a 5 μm square region is 0.3 nm or less.