GaN laminate and method of manufacturing the same
View Patent ↗To provide a new GaN laminate obtained b growing a GaN layer on a GaN substrate by HVPE, including: a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and a GaN layer epitaxially grown on the main surface of the GaN substrate wherein a surface of the GaN layer has a macro step-macro terrace structure in which a macro step and a macro terrace are alternately arranged, one of the macro step and the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to m-axis direction, and a terrace are alternately arranged, and the other one of the macro step and the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to a-axis direction, and a terrace are alternately arranged.
1. A GaN laminate, comprising:
a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and
a GaN layer epitaxially grown on the main surface of the GaN substrate,
wherein a surface of the GaN layer has a macro step-macro terrace structure in which a macro step and a macro terrace are alternately arranged,
one of the macro step and the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to in-axis direction, and a terrace are alternately arranged, and
the other one of the macro step and the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to a-axis direction, and a terrace are alternately arranged.
2. The GaN laminate according to claim 1 , wherein the macro step and the macro terrace extend in an intermediate direction between m-axis direction and a-axis direction.
3. The GaN laminate according to claim 1 , wherein a step interval in the macro step and a step interval in the macro terrace are different from each other.
4. The GaN laminate according to claim 1 , wherein the macro step is a surface inclined by 0.5° or more and 0.7° or less with respect to c-plane, the macro step having a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to m-axis direction, and a terrace are alternately arranged.
5. The GaN laminate according to claim 1 , wherein a height of a peak-to-valley of an unevenness formed by the macro step and the macro terrace is 10 nm or more.
6. A method of manufacturing a GaN laminate, comprising:
preparing a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and
eptaxially growing a GaN layer by HVPE on the main surface of the GaN substrate,
wherein in epitaxially growing the GaN layer, the GaN layer is grown, with a growth temperature set to 950° C. or more and 1200° C. or less, and a macro step-macro terrace structure is formed on the surface of the GaN layer, in which a macro step and a macro terrace are alternately arranged,
the macro step has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to m-axis direction, and a terrace are alternately arranged, and
the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to a-axis direction, and a terrace are alternately arranged.
7. The method of manufacturing a GaN laminate according to claim 6 , wherein in epitaxially growing the GaN layer, a range of growth temperature Tg and V/III ratio is set to (V/III ratio)≤0.2 Tg−180 and (V/III ratio)>0.2 Tg−209.
8. The method of manufacturing a GaN laminate according claim 6 , wherein in epitaxially growing the GaN layer, a range of growth temperature Tg and V/III ratio is set to (V/III ratio)≤0.2 Tg−189 and (V/III ratio)≥0.2 Tg−199.
9. The method of manufacturing a GaN laminate according to claim 6 , wherein in epitaxially growing the GaN layer, a range of growth temperature Tg and V/III ratio is set to (V/III ratio)<0.2 Tg−199 and (V/III ratio)≥0.2 Tg−209.
10. The method of manufacturing a GaN laminate according to claim 9 , wherein the substrate has a region in the main surface, in which a size of an off-angle is 0.5° or less, the off-angle being the angle formed by a normal direction of the main surface and c-axis direction.