Semiconductor device

1. A semiconductor device, comprising:

a substrate having a first surface, a second surface opposite to the first surface, and a side surface extending between the first surface and the second surface;

a pad electrode provided on the first surface of the substrate;

an internal wiring provided in the substrate, and electrically connected to the pad electrode;

a first wiring provided in the substrate, and exposed from the substrate at the side surface;

an insulator provided between the first wiring and the internal wiring so as to separate the first wiring from the internal wiring;

a semiconductor chip provided on the substrate, and electrically connected to the pad electrode; and

a resin covering the semiconductor chip,

wherein

the pad electrode includes a metal film provided on an electrode material, and

the first wiring is a plating wiring configured for electrolytically plating the metal film on the surface of the pad electrode.

2. The semiconductor device according to claim 1 , wherein the first wiring is in an electrically floating state.

3. The semiconductor device according to claim 1 , wherein

the substrate defines a first recess portion between the first wiring and the internal wiring, and

the first wiring is in contact with the insulator at a cut surface in the recess portion.

4. The semiconductor device according to claim 3 , wherein the substrate defines a second recess portion at the second surface.

5. The semiconductor device according to claim 4 , wherein

the side surface of the substrate is a first side surface,

the substrate has a second side surface opposite to the first side surface, and

the substrate further comprises a second wiring exposed from the second side surface.

6. The semiconductor device according to claim 1 , wherein

the first wiring is provided closer to the first surface than the second surface.

7. The semiconductor device according to claim 1 , wherein the insulator is the resin.

8. A semiconductor device, comprising:

a substrate having a first surface, a second surface opposite to the first surface, and a side surface extending between the first surface and the second surface;

a pad electrode provided on the first surface of the substrate;

an internal wiring provided in the substrate, and electrically connected to the pad electrode;

a first wiring provided in the substrate, and exposed from the substrate at the side surface;

an insulator provided between the first wiring and the internal wiring so as to separate the first wiring from the internal wiring;

a semiconductor chip provided on the substrate, and electrically connected to the pad electrode; and

a resin covering the semiconductor chip,

wherein the first wiring is provided closer to the second surface than the first surface, and

the substrate includes a first recess portionbetween the first wiring and the internal wiring.

9. The semiconductor device according to claim 8 , wherein the first wiring comprises a first material and the internal wiring comprises the first material.

10. The semiconductor device according to claim 9 , wherein the first material is copper.

11. The semiconductor device according to claim 9 , wherein the pad electrode comprises the first material.

12. The semiconductor device according to claim 8 , wherein the substrate defines a second recess portion at the second surface.

13. The semiconductor device according to claim 12 , wherein

the side surface of the substrate is a first side surface,

the substrate has a second side surface opposite to the first side surface, and

the substrate further comprises a second wiring exposed from the second side surface.

14. The semiconductor device according to claim 13 , wherein the second recess portion is filled with an underfill that electrically isolates the second wiring from the internal wiring.

15. A semiconductor device, comprising:

a substrate having a first surface, a second surface opposite to the first surface, and a side surface extending between the first surface and the second surface;

a pad electrode provided on the first surface of the substrate;

an internal wiring provided in the substrate, and electrically connected to the pad electrode;

a first wiring provided in the substrate, and exposed from the substrate at the side surface;

an insulator provided between the first wiring and the internal wiring so as to separate the first wiring from the internal wiring;

a semiconductor chip provided on the substrate, and electrically connected to the pad electrode; and

a resin covering the semiconductor chip,

wherein the substrate defines a first recess portion between the first wiring and the internal wiring,

wherein t e first wiring is in contact with the insulator at a cut surface in the recess portion,

wherein the substrate defines a second recess portion at the second surface,

wherein the side surface of the substrate is a first side surface,

wherein the substrate has a second side surface opposite to the first side surface ;

wherein the substrate further comprises a second wiring exposed from the second side surface, and

wherein the second recess portion electrically and physically separates the second wiring from the internal wiring.

16. The semiconductor device according to claim 15 , further comprising an underfill that fills the second recess.

17. The semiconductor device according to claim 15 , wherein

the pad electrode includes a metal film provided on an electrode material, and

the first wiring is a plating wiring configured for electrolytically plating the metal film on the surface of the pad electrode.

18. The semiconductor device according to claim 15 , wherein the first wiring is in an electrically floating state.

19. The semiconductor device according to claim 15 , wherein

the first wiring is provided closer to the first surface than the second surface.

20. The semiconductor device according to claim 15 , wherein the insulator is the resin.