Semiconductor storage device
A semiconductor storage device includes a base portion, a stacked body, and a first column. The base portion includes a substrate, a semiconductor element on the substrate, lower-layer wiring above the semiconductor element, and a first conductive layer above the lower-layer wiring and made of a metal compound or polycrystal silicon. The stacked body is above the first conductive layer. The stacked body includes second conductive layers and insulating films stacked alternately. The first column includes a semiconductor body and a memory film. The semiconductor body extends in a stacked direction of the stacked body and is electrically connected to the first conductive layer. A memory film has a charge trap between the plurality of second conductive layers and the semiconductor body. The first conductive layer is provided between the stacked body and the lower-layer wiring, and between a peripheral region of the stacked body and the lower-layer wiring.
1. A semiconductor storage device, comprising:
a base portion including a substrate, semiconductor elements provided on the substrate, lower-layer wirings provided above the semiconductor elements, and a first conductive layer provided above the lower-layer wirings and made of a metal compound or polycrystal silicon;
a stacked body provided above the first conductive layer, the stacked body including a plurality of second conductive layers and a plurality of first insulating films stacked alternately in a first direction, and a second insulating film provided in a second direction of the plurality of second conductive layers, the second direction crossing the first direction; and
a first columnar portion including a semiconductor body and extending in the first direction of the stacked body and electrically connected to the first conductive layer,
a memory film provided between the semiconductor body and the plurality of second conductive layers,
wherein the stacked body comprises:
a first region provided with the first columnar portion; and
a second region having a first contact extending inside the second insulating film in the first direction and connected to a first wiring among the lower-layer wirings,
the first conductive layer is provided between the first region of the stacked body and the lower-layer wirings, and between the second region of the stacked body and the lower-layer wirings, and
the first contact extends through the first conductive layer and is insulated from the first conductive layer.
2. The semiconductor storage device according to claim 1 , wherein the stacked body comprises:
a plurality of the first regions provided with the first columnar portion; and
a third region located between the first regions adjacent to each other,
wherein the first conductive layer is provided, not only between the first regions and the lower-layer wirings, but also between the third region and the lower-layer wirings.
3. The semiconductor storage device according to claim 1 , wherein the stacked body comprises a fourth region having a contact connected to each of the second conductive layers, and
wherein the first conductive layer is also provided between the fourth region and the lower-layer wirings.
4. The semiconductor storage device according to claim 2 , wherein the stacked body comprises a fourth region having a contact connected to each of the second conductive layers, and
wherein the first conductive layer is also provided between the fourth region and the lower-layer wirings.
5. The semiconductor storage device according to claim 1 , wherein a metal material is used for the lower-layer wirings, and a metal compound hardly oxidized more than the lower-layer wirings is used for the first conductive layer.
6. The semiconductor storage device according to claim 2 , wherein a metal material is used for the lower-layer wirings, and a metal compound hardly oxidized more than the lower-layer wirings is used for the first conductive layer.
7. The semiconductor storage device according to claim 3 , wherein a metal material is used for the lower-layer wirings, and a metal compound hardly oxidized more than the lower-layer wirings is used for the first conductive layer.
8. The semiconductor storage device according to claim 1 , wherein tungsten silicide or titanium nitride is used for the first conductive layer.
9. The semiconductor storage device according to claim 2 , wherein tungsten silicide or titanium nitride is used for the first conductive layer.
10. The semiconductor storage device according to claim 3 , wherein tungsten silicide or titanium nitride is used for the first conductive layer.
11. The semiconductor storage device according to claim 1 , wherein the first conductive layer is provided up to an outside of the lower-layer wirings when viewed from the first direction of the stacked body.
12. The semiconductor storage device according to claim 2 , wherein the first conductive layer is provided up to an outside of the lower-layer wirings when viewed from the first direction of the stacked body.
13. The semiconductor storage device according to claim 3 , wherein the first conductive layer is provided up to an outside of the lower-layer wirings when viewed from the first direction of the stacked body.
14. The semiconductor storage device according to claim 1 further comprising:
a silicon nitride film provided between the lower-layer wirings and the first conductive layer; and
a metal oxide film provided between the silicon nitride film and the first conductive layer.
15. The semiconductor storage device according to claim 14 , wherein the metal oxide film is provided up to an outside of the lower-layer wirings when viewed from the first direction of the stacked body.