Structure and intermediate structure
This invention provides a novel structure formed from GaN material using PEC etching. The structure comprises a member constituted by a single crystal of gallium nitride and the member includes a recess having an aspect ratio of 5 or more.
1. A structure comprising:
a first member constituted by a single crystal of gallium nitride,
the first member including a recess,
the recess having an aspect ratio of 5 or more and a depth of 5 μm or more, and
a bottom of the recess being constituted by the gallium nitride, and
an upper face of the first member outside of an aperture of the recess being c face;
and
a second member loaded inside the recess.
2. The structure according to claim 1 , wherein a width of an upper end of the recess is 6 μm or less.
3. The structure according to claim 1 , wherein
the first member comprises a first conductive type,
the second member comprises a second conductive type differing from the first conductive type, and
the second member forms a pn junction with the first member.
4. The structure according to claim 1 , wherein the second member is an insulated gate electrode.
5. The structure according to claim 1 , wherein a bottom face of the recess is a flat face that is parallel to an upper face of the first member outside of an aperture of the recess.
6. The structure according to claim 1 , wherein an edge of the aperture of the recess has a portion that is not perpendicular to m axis.
7. The structure according to claim 3 , wherein the second member forms the pn junction with the first member on the bottom of the recess.