Light emitting device with reflective sidewall
Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.
1. A device comprising:
a light emitting semiconductor structure;
a wavelength converting structure disposed on a top surface of the light emitting semiconductor structure;
a light blocking structure disposed along a sidewall of the light emitting semiconductor structure and the wavelength converting structure, the light blocking structure being a same color as an off-state color of the wavelength converting structure; and
a reflective layer disposed between the light blocking structure and the semiconductor structure, the reflective layer including alternating first and second insulating layers, the first insulating layers having a different index of refraction from the second insulating layers.
2. The device of claim 1 , the light blocking structure comprising particles disposed in a transparent material.
3. The device of claim 2 , the particles being TiO2 and the transparent material being silicone.
4. The device of claim 1 , a surface of the light blocking structure being at a same elevation as a surface of the wavelength converting structure.
5. The device of claim 1 , the reflective layer comprising an oxide.
6. The device of claim 1 , the light blocking structure comprising a pigment.
7. The device of claim 1 , the light blocking structure being a different color than an off-state color of the wavelength converting structure.
8. The device of claim 1 , the reflective layer comprising a material that is different than a material of the light blocking structure.
9. The device of claim 1 , the light blocking structure being non-white.
10. The device of claim 1 , the reflective layer being further disposed between the light blocking structure and the wavelength converting structure.
11. A device comprising:
a plurality of light emitting devices arranged in parallel, each light emitting device comprising:
a light emitting semiconductor structure;
a wavelength converting structure disposed on a top surface of the light emitting semiconductor structure;
a light blocking structure disposed along a sidewall of each of the light emitting semiconductor structures and each of the wavelength converting structures, the light blocking structure being a same color as an off-state color of the wavelength converting structure; and
a reflective layer disposed between the light blocking structure and each of the semiconductor structures, the reflective layer including alternating first and second insulating layers, the first insulating layers having a different index of refraction from the second insulating layers.
12. The device of claim 11 , the plurality of light emitting devices including a first light emitting device and a second light emitting device, the light blocking structure being disposed between the first light emitting device and the second light emitting device.
13. The device of claim 11 , the reflective layer being further disposed between the light blocking structure and each of the wavelength converting structures.
14. The device of claim 11 , the plurality of light emitting devices including a first light emitting device and a second light emitting device, the first light emitting device further comprising a second wavelength converting layer structure disposed on the wavelength converting structure of the first light emitting device, the second wavelength converting structure having a same off-state appearance as the wavelength converting structure of the second light emitting device.
15. The device of claim 14 , the first light emitting device being a warm white emitter and the second light emitting device being a cool white emitter.
16. The device of claim 14 , the first light emitting device further comprising a dichroic filter between the second wavelength converting layer structure and the wavelength converting structure of the first light emitting device.
17. The device of claim 11 , the light blocking structure comprising a pigment.
18. The device of claim 11 , further comprising a scattering layer disposed on the plurality of light emitting devices.