Magnetic storage device
View Patent ↗According to one embodiment, a storage device includes a magnetoresistive effect element comprising a nonmagnetic layer and a stacked body on the nonmagnetic layer. The stacked body includes a first ferromagnetic layer on the nonmagnetic layer, a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, and a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.
1. A storage device, comprising:
a magnetoresistive effect element including:
a nonmagnetic layer, and
a stacked body on the nonmagnetic layer, the stacked body including:
a first ferromagnetic layer on the nonmagnetic layer;
a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer; and
a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, wherein
the magnetic layer is an amorphous material comprising a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.
2. The storage device according to claim 1 , wherein the at least one compound further includes at least one element selected from among titanium, zirconium, hafnium, vanadium, niobium, and tantalum.
3. The storage device according to claim 2 , wherein the at least one compound is at least one of titanium nitride, zirconium nitride, titanium carbide, zirconium carbide, niobium carbide, tantalum carbide, titanium boride and zirconium boride.
4. The storage device according to claim 1 , wherein the magnetic material includes at least one of cobalt and nickel.
5. The storage device according to claim 1 , wherein the magnetic layer is a soft magnetic material.
6. The storage device according to claim 1 , wherein the at least one compound is at a concentration of between 5 mol % and 50 mol % in the magnetic layer.
7. The storage device according to claim 1 , wherein the second ferromagnetic layer has a crystal structure that is different from a crystal structure of the first ferromagnetic layer.
8. The storage device according to claim 7 , wherein the crystal structure of the first ferromagnetic layer is substantially the same as a crystal structure of the nonmagnetic layer.
9. The storage device according to claim 1 , wherein
the magnetoresistive effect element further includes a third ferromagnetic layer on a side of the nonmagnetic layer opposite the first ferromagnetic layer, and
the first ferromagnetic layer, the nonmagnetic layer, and the third ferromagnetic layer constitute a magnetic tunnel junction element.
10. The storage device according to claim 9 , wherein the third ferromagnetic layer has a thickness greater than a thickness of the stacked body.
11. The storage device according to claim 1 , further comprising:
a memory cell comprising the magnetoresistive effect element and a selector connected to the magnetoresistive effect element.
12. A magnetic tunnel junction element, comprising:
a non-magnetic layer having a first crystalline structure;
a first ferromagnetic layer on the non-magnetic layer and having a second crystalline structure corresponding to the first crystalline structure;
a magnetic material layer on the first ferromagnetic layer and having an amorphous structure;
a second ferromagnetic layer on the magnetic material layer and having a third crystalline structure, wherein
the first and second ferromagnetic layers are exchange-coupled, and
the magnetic material layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.
13. The magnetic tunnel junction element according to claim 12 , wherein the second crystalline structure is a body-centered-cubic type and the third crystalline structure is a face-center-cubic type.
14. The magnetic tunnel junction element according to claim 12 , wherein
the magnetic material of the magnetic material layer comprises at least one of cobalt and nickel,
the at least one compound is selected from titanium nitride, zirconium nitride, titanium carbide, zirconium carbide, niobium carbide, tantalum carbide, titanium boride and zirconium boride, and
the at least one compound is between 5 mol % and 50 mol % in the magnetic material layer.
15. The magnetic tunnel junction element according to claim 12 , further comprising:
a third ferromagnetic layer on a side of the non-magnetic layer opposite the first ferromagnetic layer.
16. The magnetic tunnel junction element according to claim 12 , wherein the magnetic material of the magnetic layer is a soft magnetic material.
17. The storage device according to claim 1 , wherein the first ferromagnetic layer has a crystalline structure corresponding to a crystalline structure of the nonmagnetic layer.
18. The storage device according to claim 1 , wherein the first ferromagnetic layer and the second ferromagnetic layer have different crystalline structures.
19. A storage device, comprising:
a magnetoresistive effect element including:
a nonmagnetic layer, and
a stacked body on the nonmagnetic layer, the stacked body including:
a first ferromagnetic layer on the nonmagnetic layer, the first ferromagnetic layer being a first crystalline structure;
a second ferromagnetic layer exchange-coupled with the first ferromagnetic layer, the second ferromagnetic layer being a second crystalline structure that differs from the first crystalline structure; and
a magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, wherein
the magnetic layer includes a magnetic material and at least one compound selected from among a carbide, a nitride, and a boride.
20. The storage device according to claim 19 , wherein
the at least one compound is one of titanium nitride, zirconium nitride, titanium carbide, zirconium carbide, niobium carbide, tantalum carbide, titanium boride and zirconium boride, and
the magnetic material includes at least one of cobalt and nickel.