PLASMA TREATMENT DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A plasma treatment device for forming a film on a substrate using plasma enhanced chemical vapor deposition includes an upper electrode and a substrate placing table on which the substrate is to be placed and which includes a heater configured to heat the substrate and a lower electrode opposed to the upper electrode. The device additionally includes a first side surface electrode that is embedded in a side surface of the substrate placing table and is spaced from the lower electrode. A second side surface electrode that is opposed to the first side surface electrode is disposed outside the substrate placing table.
1 . A plasma treatment device for forming a film on a substrate using plasma enhanced chemical vapor deposition, the plasma treatment device comprising:
an upper electrode;
a substrate placing table on which the substrate is to be placed, the substrate placing table including a heater configured to heat the substrate and a lower electrode opposed to the upper electrode;
a first side surface electrode that is embedded in a side surface of the substrate placing table and is spaced from the lower electrode; and
a second side surface electrode that is opposed to the first side surface electrode and is disposed outside the substrate placing table.
2 . The plasma treatment device according to claim 1 , further comprising:
a power source configured to apply a voltage to the upper electrode and the second side surface electrode,
wherein the power source is configured to apply the voltage to the upper electrode and to apply the voltage to the second side surface electrode independently of each other.
3 . The plasma treatment device according to claim 1 , wherein the upper electrode includes
a cavity configured to receive a treatment gas, and
a plurality of openings configured to discharge the treatment gas from the cavity.
4 . The plasma treatment device according to claim 3 , further comprising a chamber containing the upper electrode and the substrate placing table, the chamber being configured to contain the treatment gas discharge from the cavity of the upper electrode within the chamber.
5 . The plasma treatment device according to claim 4 , further comprising a control circuit configured to control the plurality of ejection openings and to supply the treatment gas to the upper electrode.
6 . The plasma treatment device according to claim 5 , wherein the control circuit is further configured to select the treatment gas from one or more treatment gas sources.
7 . The plasma treatment device according to claim 6 , wherein the control circuit is configured to select a cleaning gas as the treatment gas and supply the cleaning gas to the upper electrode in order to form a post-cleaning film on the substrate placing table, wherein the cleaning gas is fluoride based.
8 . The plasma treatment device according to claim 7 , wherein the control circuit is further configured to select a seasoning gas as the treatment gas and supply the seasoning gas to the upper electrode, wherein the seasoning gas bonds with particles inside the chamber and forms a seasoning film on the substrate placing table and the upper electrode.
9 . A method for manufacturing a semiconductor device implemented by a plasma treatment device for forming a film on a substrate using plasma enhanced chemical vapor deposition,
the plasma treatment device including:
an upper electrode;
a substrate placing table on which the substrate is to be placed, the substrate placing table including a heater configured to heat the substrate and a lower electrode opposed to the upper electrode;
a first side surface electrode that is embedded in a side surface of the substrate placing table and is spaced from the lower electrode; and
a second side surface electrode that is opposed to the first side surface electrode and is disposed outside the substrate placing table,
the method comprising:
applying a voltage to the second side surface electrode to generate a plasma of a seasoning gas in the vicinity of the side surface of the substrate placing table, and
forming a seasoning film on the side surface of the substrate placing table.
10 . The method for manufacturing a semiconductor device according to claim 9 further comprising:
lowering a temperature of the substrate placing table to a temperature for a seasoning treatment;
performing a dry cleaning treatment for the upper electrode and the substrate placing table using a fluorine-based gas; and
raising the temperature of the substrate placing table to a temperature for a plasma treatment,
wherein the voltage is applied to the second side surface electrode after the dry cleaning treatment and before the temperature is raised to the temperature for the plasma treatment.
11 . The method for manufacturing a semiconductor device according to claim 9 , further comprising:
applying a voltage to the upper electrode to generate the plasma of the seasoning gas above the substrate placing table, and
forming the seasoning film on an upper surface of the substrate placing table.
12 . The method for manufacturing a semiconductor device according to claim 9 , further comprising releasing the seasoning gas from the upper electrode.
13 . The method for manufacturing a semiconductor device according to claim 9 , further comprising:
conducting a plurality of cycles of plasma treatment to form a deposition film on the upper electrode and the substrate placing table;
dry cleaning the upper electrode and the substrate placing table to remove the deposition film; and
forming a post-cleaning film on the upper electrode and the substrate placing table.
14 . The method for manufacturing a semiconductor device according to claim 13 , wherein forming the seasoning film on the upper surface of the substrate placing table further comprises forming the seasoning film on the post-cleaning film.
15 . A system for preventing deposition of film particles in a chamber for plasma enhanced chemical vapor deposition, the system comprising:
an upper electrode having a plurality of ejection ports configured to provide a treatment gas into the chamber;
a pedestal configured to receive a semiconductor wafer positioned beneath the upper electrode, the pedestal comprising:
a lower electrode directly below the semiconductor wafer; and
two side surface electrodes adjacent a side wall of the pedestal, wherein one of the two side surface electrodes is positioned in an interior of the pedestal and another one of the two side surface electrodes is positioned at an exterior of the pedestal; and
a control circuit operably connected to the upper electrode and the pedestal to control voltages between the upper electrode and the lower electrode and voltages between the two side surface electrodes, and to select a type of the treatment gas supplied to the upper electrode.
16 . The system of claim 15 , wherein the control circuit is configured to select, according to an operation stage, a deposition gas, a dry cleaning gas, or a seasoning treatment gas as the treatment gas, and wherein the seasoning treatment gas bonds particles of a previous deposition film made from the deposition gas.
17 . The system of claim 16 , further comprising a heater configured to heat the semiconductor wafer placed on the pedestal.
18 . The system of claim 17 , wherein the control circuit supplies the seasoning treatment gas to the chamber when the heater is off.
19 . The system of claim 18 , wherein the dry cleaning gas is fluorine-based gas, and wherein the control circuit is configured to deposit a fluoride film onto the upper electrode and the side wall of the pedestal.
20 . The system of claim 19 , wherein the control circuit is configured to deposit a seasoning film onto the fluoride film using the seasoning treatment gas after bonding the particles of the previous deposition film in the chamber.