Semiconductor device and method for manufacturing the same
A semiconductor device including a stacked body that includes insulating layers and conductive layers that are alternately stacked, a first film provided inside a recess portion that penetrates through the stacked body, a second film provided on a surface of the first film, a third film provided on a surface of the second film, and a fourth film provided on a surface of the third film. An average concentration of a halogen element per unit area in the third film and the fourth film is lower than an average concentration of the halogen element per unit area at an interface between the third film and the fourth film.
1. A semiconductor device comprising:
a stacked body including insulating layers and conductive layers that are alternately stacked in a first direction;
a semiconductor film penetrating through the stacked body;
a first insulating film provided along the semiconductor film;
a charge storage film provided along the first insulating film; and
a second insulating film provided along the charge storage film,
wherein the semiconductor film and the first insulating film each include a halogen element,
wherein a concentration of a halogen element in the semiconductor film and the first insulating film is lower than a concentration of the halogen element at an interface between the semiconductor film and the first insulating film,
wherein an amount of decrease of the concentration of the halogen element in a direction from the interface to the charge storage film is smaller than an amount of decrease of the concentration of the halogen element in a direction from the interface to the semiconductor film.
2. The semiconductor device according to claim 1 , wherein decrease of the concentration of the halogen element is within 5 nanometers (nm) to 15 nm from the interface.
3. The semiconductor device according to claim 1 , wherein a concentration of the halogen element at an interface between the first insulating film and the charge storage film is smaller than the concentration of the halogen element at the interface between the first insulating film and the semiconductor film.
4. The semiconductor device according to claim 1 , wherein the halogen element includes fluorine or chlorine.
5. The semiconductor device according to claim 1 , further comprising:
a third insulating film provided along the semiconductor film; and
a fourth insulating film provided along the third insulating film.
6. The semiconductor device according to claim 1 ,
wherein the second insulating film is a silicon oxide film,
wherein the charge storage film is a silicon nitride film,
wherein the first insulating film includes a silicon oxynitride film and a silicon oxide film, and
wherein the semiconductor film is a polysilicon film.
7. The semiconductor device according to claim 1 ,
wherein the charge storage film includes the halogen element, and
wherein a concentration of the halogen element in the charge storage film is lower than a concentration of the halogen element in the first insulating film.
8. The semiconductor device according to claim 1 ,
wherein the concentration of the halogen element in the first insulating film is more than 1×10 20 ) 2/3 cm −2 .
9. A semiconductor device comprising:
a stacked body including insulating layers and conductive layers that are alternately stacked in a first direction;
a semiconductor film penetrating through the stacked body in the first direction;
a first insulating film provided on a surface of the semiconductor film;
a charge storage film provided on the first insulating film; and
a second insulating film provided on the charge storage film,
wherein the semiconductor film and the first insulating film each include a halogen element,
wherein a concentration of a halogen element in the semiconductor film and the first insulating film is lower than a concentration of the halogen element at an interface between the semiconductor film and the first insulating film, and
wherein a concentration of the halogen element at an interface between the first insulating film and the charge storage film is smaller than the concentration of the halogen element at the interface between the first insulating film and the semiconductor film.